PANASONIC XP6435

Composite Transistors
XP6435
Silicon PNP epitaxial planer transistor
Unit: mm
For high-frequency amplification
1
6
2
5
3
4
0 to 0.1
2SA1022 × 2 elements
0.12 –0.02
0.9±0.1
●
0.7±0.1
■ Basic Part Number of Element
+0.05
0.2
●
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
0.425
0.65
●
2.0±0.1
■ Features
1.25±0.1
0.65
0.425
0.2±0.05
2.1±0.1
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–30
V
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
VCEO
–20
V
VEBO
–5
V
IC
–30
mA
PT
150
mW
Total power dissipation
Overall Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
0.2±0.1
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: 7W
Internal Connection
1
Tr1
5
2
3
■ Electrical Characteristics
Parameter
Collector cutoff current
*1
6
Tr2
4
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
ICBO
VCB = –10V, IE = 0
– 0.1
µA
ICEO
VCE = –20V, IB = 0
–100
µA
–10
µA
Emitter cutoff current
IEBO
VEB = –5V, IC = 0
Forward current transfer ratio
hFE
VCB = –10V, IE = 1mA
50
Forward current transfer hFE ratio
hFE (small/large)*1
VCB = –10V, IE = 1mA
0.5
Collector to emitter saturation voltage
VCE(sat)
IC = –10mA, IB = –1mA
Base to emitter voltage
VBE
VCE = –10V, IC = –1mA
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
Noise figure
NF
VCB = –10V, IE = 1mA, f = 5MHz
2.8
dB
Reverse transfer impedance
Zrb
VCB = –10V, IE = 1mA, f = 2MHz
22
Ω
Common emitter reverse transfer capacitance
Cre
VCB = –10V, IE = 1mA, f = 10.7MHz
1.2
pF
220
0.99
– 0.1
– 0.7
150
V
V
MHz
Ratio between 2 elements
1
Composite Transistors
XP6435
PT — Ta
IC — VCE
VCE(sat) — IC
–30
–100
–25
200
Collector current IC (mA)
150
100
50
IB=–250µA
–20
–200µA
–15
–150µA
–10
–100µA
–50µA
–5
0
0
0
20
40
60
0
80 100 120 140 160
–2
–6
hFE — IC
Ta=75˚C
25˚C
–25˚C
60
40
20
0
–0.1 –0.3
–1
–3
–10
–30
Collector output capacitance Cob (pF)
VCE=–10V
80
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3
–100
Collector current IC (mA)
–1
–3
fT — I E
20
400
300
200
100
3
10
30
Emitter current IE (mA)
2
–10
–30
100
–1
–3
–10
–30
–100
Collector current IC (mA)
–100
5
IC=–1mA
f=10.7MHz
Ta=25˚C
4
3
2
1
0
–1
–2 –3 –5
–10
–20 –30 –50 –100
Collector to emitter voltage VCE (V)
NF — IE
5
VCB=–10V
f=100MHz
Ta=25˚C
4
16
12
8
3
2
1
4
1
–0.01
–0.1 –0.3
Noise figure NF (dB)
Power gain PG (dB)
Transition frequency fT (MHz)
500
–25˚C
–0.03
VCE=–10V
f=100MHz
Ta=25˚C
VCB=–10V
Ta=25˚C
25˚C
–0.1
PG — IC
24
Ta=75˚C
–0.3
Collector to base voltage VCB (V)
600
0.3
–1
Cre — VCE
6
100
–10
–3
Cob — VCB
120
0
0.1
–8
–10
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C)
Forward current transfer ratio hFE
–4
IC/IB=10
–30
Common emitter reverse transfer capacitance Cre (pF)
Total power dissipation PT (mW)
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
250
0
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
–100
0
0.1
0.2 0.3 0.5
1
2
3
5
Emitter current IE (mA)
10