Composite Transistors XP6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SA1022 × 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 ■ Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.425 0.65 ● 2.0±0.1 ■ Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –30 V Rating Collector to emitter voltage of element Emitter to base voltage Collector current VCEO –20 V VEBO –5 V IC –30 mA PT 150 mW Total power dissipation Overall Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) 0.2±0.1 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: 7W Internal Connection 1 Tr1 5 2 3 ■ Electrical Characteristics Parameter Collector cutoff current *1 6 Tr2 4 (Ta=25˚C) Symbol Conditions min typ max Unit ICBO VCB = –10V, IE = 0 – 0.1 µA ICEO VCE = –20V, IB = 0 –100 µA –10 µA Emitter cutoff current IEBO VEB = –5V, IC = 0 Forward current transfer ratio hFE VCB = –10V, IE = 1mA 50 Forward current transfer hFE ratio hFE (small/large)*1 VCB = –10V, IE = 1mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA Base to emitter voltage VBE VCE = –10V, IC = –1mA Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz Noise figure NF VCB = –10V, IE = 1mA, f = 5MHz 2.8 dB Reverse transfer impedance Zrb VCB = –10V, IE = 1mA, f = 2MHz 22 Ω Common emitter reverse transfer capacitance Cre VCB = –10V, IE = 1mA, f = 10.7MHz 1.2 pF 220 0.99 – 0.1 – 0.7 150 V V MHz Ratio between 2 elements 1 Composite Transistors XP6435 PT — Ta IC — VCE VCE(sat) — IC –30 –100 –25 200 Collector current IC (mA) 150 100 50 IB=–250µA –20 –200µA –15 –150µA –10 –100µA –50µA –5 0 0 0 20 40 60 0 80 100 120 140 160 –2 –6 hFE — IC Ta=75˚C 25˚C –25˚C 60 40 20 0 –0.1 –0.3 –1 –3 –10 –30 Collector output capacitance Cob (pF) VCE=–10V 80 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 –0.1 –0.3 –100 Collector current IC (mA) –1 –3 fT — I E 20 400 300 200 100 3 10 30 Emitter current IE (mA) 2 –10 –30 100 –1 –3 –10 –30 –100 Collector current IC (mA) –100 5 IC=–1mA f=10.7MHz Ta=25˚C 4 3 2 1 0 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to emitter voltage VCE (V) NF — IE 5 VCB=–10V f=100MHz Ta=25˚C 4 16 12 8 3 2 1 4 1 –0.01 –0.1 –0.3 Noise figure NF (dB) Power gain PG (dB) Transition frequency fT (MHz) 500 –25˚C –0.03 VCE=–10V f=100MHz Ta=25˚C VCB=–10V Ta=25˚C 25˚C –0.1 PG — IC 24 Ta=75˚C –0.3 Collector to base voltage VCB (V) 600 0.3 –1 Cre — VCE 6 100 –10 –3 Cob — VCB 120 0 0.1 –8 –10 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) Forward current transfer ratio hFE –4 IC/IB=10 –30 Common emitter reverse transfer capacitance Cre (pF) Total power dissipation PT (mW) Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 250 0 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 0 0.1 0.2 0.3 0.5 1 2 3 5 Emitter current IE (mA) 10