Z04xxxF SENSITIVE GATE TRIACS FEATURES IT(RMS) = 4A VDRM = 400V to 800V IGT ≤ 3mA to ≤ 25mA A1 A2 DESCRIPTION The Z04xxxF series of triacs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where high gate sensitivity or high switching performances are required (like touch dimmers, fan, electrovalue control,...). G TO202-3 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2 t dI/dt Tstg Tj Tl Parameter Value Unit Tc= 75 °C 4 A Ta= 25 °C 0.95 tp = 8.3 ms 22 tp = 10 ms 20 I2t Value for fusing tp = 10 ms 2 A2s Critical rate of rise of on-state current IG = 50 mA diG /dt = 0.1 A/µs. Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 RMS on-state current (360° conductionangle) Non repetitive surge peak on-state current (Tj initial = 25°C ) Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Symbol VDRM VRRM August 1998 Ed : 1A - 40, + 150 - 40, + 125 °C 260 °C Voltage Parameter Repetitive peak off-state voltage Tj = 125°C A Unit D M N 400 600 800 V 1/4 Z04xxxF THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 100 °C/W Rth(j-c) Junction to case for D.C 10 °C/W Rth(j-c) Junction to case for A.C 360°conduction angle (F=50Hz) 7.5 °C/W GATE CHARACTERISTICS PG (AV)= 0.2 W max. PGM = 3 W max. (tp = 20 µs) VGD = 0.2Vmin. (VD=VDRM RL=3.3kΩ Tj= 125°C) IGM = 1.2 A max. (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Sensitivity Quadrant IGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III-IV MAX VGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III-IV MAX IH * IT= 50 mA Gate open Tj= 25°C IG= 1.2 IGT Tj= 25°C IL 05 09 10 3 5 10 25 1.5 mA V MAX 3 5 10 25 mA I-III-IV MAX 6 10 15 25 mA II MAX 12 15 25 50 VTM * ITM= 5.5A tp= 380µs Tj= 25°C MAX 2 V IDRM IRRM VD = VDRM VR = VRRM Tj= 25°C MAX 5 µA Tj= 110°C MAX 200 VD=67%VDRM Gate open Tj= 110°C MIN 10 20 100 (dI/dt)c = 1.3 A/ms Tj= 110°C MIN 0.5 1 2 (dI/dt)c = 1.8 A/ms Tj= 110°C MIN dV/dt * (dV/dt)c * ORDERING INFORMATION Z 04 05 F PACKAGE : F=TO202-3 TRIAC TOP GLASS CURRENT M SENSITIVITY 200 VOLTAGE V/µs V/µs 5 * For either polarity of electrode A2 voltage with reference to electrodeA 1 2/4 Unit 02 V/µs Z04xxxF Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase). Tcase (oC) P (W) P(W) 7 180 7 O 6 o 5 = 120 o 4 = 90 o -85 4 -95 = 60 3 2 o 2 -105 1 I 0 0 Rth(j-c) 5 3 = 30 -75 o = 180 6 1 2 T(RMS) 3 -115 Rth(j-a) 1 (A) o 4 Fig.3 : RMS on-state current versus case temperature. Tamb ( C) 0 0 20 40 60 80 100 120 -125 140 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. I T(RMS) (A) Zth(j-a)/Rth(j-a) 1 1.00 0.8 0.6 o = 180 0.10 0.4 0.2 Tamb(oC) 0 0 tp( s) 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relativevariation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] 1E-2 1E-1 1 E +0 1 E +1 1E +2 5 E +2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 20 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 1E-3 o Tj initial = 25 C 15 Igt 10 Ih 5 Number of cycles Tj(oC) -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/4 Z04xxxF Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Fig.8 : On-statecharacteristics(maximum values). I TM (A) 100 100 Tj initial = 25oC Tj initial o 25 C 10 I TSM 10 Tj max Tj max Vto =0.98 V Rt =0.180 1 It 2 VTM (V) tp (ms) 1 1 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS REF. A C O F D J P H N1 N M Millimeters Typ. Max. Inches Typ. Max. 10.1 0.398 A C 7.3 0.287 D 10.5 0.413 E F 7.4 0.290 H 0.51 0.020 J M 1.5 4.5 0.059 0.177 N N1 2.54 O P 1.5 0.059 5.3 0.209 0.100 1.4 0.7 0.055 0.028 Marking : type number Weight : 1 g Information furnished is believed to be accurate and reliable. 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