ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Forward Current IF Power Dissipation at T amb =25°C P tot Operating and Storage Temperature Range T j:T stg MAX UNIT 200 mA 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb =25°C) PARAMETER SYMBOL Reverse Breakdown Voltage VBR MIN TYP MAX 25 Reverse Voltage Leakage IR 0.2 10 Temperature Coefficient of Capacitance η 0.03 0.04 UNIT CONDITIONS V I R =10 µ A nA V R=20V %/°C V R=3V, f=1MHz TUNING CHARACTERISTICS (at Tamb =25°C) Nominal Capacitance (pF) VR=2V, f=1MHz PART NO MIN NOM MAX Minimum Q @ VR=3V f=50MHz Capacitance Ratio C2 / C20 at f=1MHz MIN MAX ZC830A 9.0 10.0 11.0 300 4.5 6.0 ZC831A 13.5 15.0 16.5 300 4.5 6.0 ZC832A 19.8 22.0 24.2 200 5.0 6.5 ZC833A 29.7 33.0 36.3 200 5.0 6.5 ZC834A 42.3 47.0 51.7 200 5.0 6.5 ZC835A 61.2 68.0 74.8 100 5.0 6.5 ZC836A 90.0 100.0 110.0 100 5.0 6.5 Note: No suffix ±20% (e.g. ZC830), suffix B ± 5% (e.g. ZC830B) Spice parameter data is available upon request for this device ZC830/A/B to ZC836/A/B PARTMARKING DETAILS PART NO PARTMARK PART NO PARTMARK PART NO PARTMARK ZC830 J1S ZC830A J1A ZC830B J1B ZC831 J3S ZC831A J3A ZC831B J3B ZC832 J4S ZC832A J4A ZC832B J4B ZC833 J2S ZC833A J2A ZC833B J2B ZC834 J5S ZC834A J5A ZC834B J5B ZC835 J6S ZC835A J6A ZC835B J6B ZC836 J7S ZC836A J7A ZC836B J7B 200 Diode Capacitance (pF) 100 836A 835A 10 834A 833A 832A 831A 830A 1 1 10 Reverse Voltage (Volts) Diode Capacitance 100