ZETEX ZC831

ZC830/A/B
to
ZC836/A/B
SOT23 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998
1
FEATURES
* Close Tolerance C-V Characteristics
* High Tuning Ratio
* Low IR
Enabling Excellent Phase Noise Performance
(IR Typically <200pA at 25V)
2
1
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Forward Current
IF
Power Dissipation at T amb =25°C
P tot
Operating and Storage Temperature Range
T j:T stg
MAX
UNIT
200
mA
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb =25°C)
PARAMETER
SYMBOL
Reverse Breakdown
Voltage
VBR
MIN
TYP
MAX
25
Reverse Voltage Leakage
IR
0.2
10
Temperature Coefficient
of Capacitance
η
0.03
0.04
UNIT CONDITIONS
V
I R =10 µ A
nA
V R=20V
%/°C
V R=3V, f=1MHz
TUNING CHARACTERISTICS (at Tamb =25°C)
Nominal Capacitance (pF)
VR=2V, f=1MHz
PART NO
MIN
NOM
MAX
Minimum
Q
@ VR=3V
f=50MHz
Capacitance Ratio
C2 / C20
at f=1MHz
MIN
MAX
ZC830A
9.0
10.0
11.0
300
4.5
6.0
ZC831A
13.5
15.0
16.5
300
4.5
6.0
ZC832A
19.8
22.0
24.2
200
5.0
6.5
ZC833A
29.7
33.0
36.3
200
5.0
6.5
ZC834A
42.3
47.0
51.7
200
5.0
6.5
ZC835A
61.2
68.0
74.8
100
5.0
6.5
ZC836A
90.0
100.0
110.0
100
5.0
6.5
Note:
No suffix ±20% (e.g. ZC830), suffix B ± 5% (e.g. ZC830B)
Spice parameter data is available upon request for this device
ZC830/A/B
to
ZC836/A/B
PARTMARKING DETAILS
PART NO
PARTMARK
PART NO
PARTMARK
PART NO
PARTMARK
ZC830
J1S
ZC830A
J1A
ZC830B
J1B
ZC831
J3S
ZC831A
J3A
ZC831B
J3B
ZC832
J4S
ZC832A
J4A
ZC832B
J4B
ZC833
J2S
ZC833A
J2A
ZC833B
J2B
ZC834
J5S
ZC834A
J5A
ZC834B
J5B
ZC835
J6S
ZC835A
J6A
ZC835B
J6B
ZC836
J7S
ZC836A
J7A
ZC836B
J7B
200
Diode Capacitance (pF)
100
836A
835A
10
834A
833A
832A
831A
830A
1
1
10
Reverse Voltage (Volts)
Diode Capacitance
100