SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT458 ISSUE 4 JANUARY 1996 FEATURES * 400 Volt VCEO COMPLEMENTARY TYPE PARTMARKING DETAIL C E FZT558 FZT458 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 300 mA Peak Pulse Current ICM Base Current IB Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 A 200 mA 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO 400 MAX. V IC=100µA VCEO(sus) 400 V IC=10mA* V(BR)EBO 5 V IE=100µA ICBO 100 nA VCB=320V ICES 100 nA VCE=320V Emitter Cut-Off Current IEBO 100 nA VEB=4V Emitter Saturation Voltages VCE(sat) 0.2 0.5 V V IC=20mA, IB=2mA* IC=50mA, IB=6mA* VBE(sat) 0.9 V IC=50mA, IB=5mA* Base-Emitter Turn On Voltage VBE(on) 0.9 V IC=50mA, VCE=10V* Static Forward Current Transfer Ratio hFE 100 100 15 Transition Frequency fT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff Collector Cut-Off Currents IC=1mA, VCE=10V IC=50mA, VCE=10V* IC=100mA, VCE=10V* 300 5 135 Typical 2260 Typical MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz ns ns IC=50mA, VCC=100V IB1=5mA, IB2=-10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT458 datasheet 3 - 187