FMMT455 tf ts ns µS tr 0.4 tf Switching time - (Volts) 0.3 IC/IB=10 0.2 0.1 400 6 IB1=IB2=IC/10 VCE=10V 700 600 td 500 0.1 400 50 1 300 0 0.01 1 IC - Collector Current (Amps) 0.1 0 1 IC - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10 80 - (Volts) 60 0.8 V 20 0.4 0.2 0.001 0.01 0.1 1 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Base Current IB 200 mA 500 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.6 40 h - Normalised Gain (%) 100 VCE=10V SOT23 2 0 0.01 nS 100 td 0.001 B 455 4 3 200 100 0 PARTMARKING DETAIL 5 tr 300 E C 800 ts V 7 ns 500 FMMT455 ISSUE 3 FEBRUARY 1996 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 500 mW TYPICAL CHARACTERISTICS 900 SOT23 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR 0.01 0.001 10 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1 Single Pulse Test at Tamb=25°C 10 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Sustaining Voltage MIN. MAX. UNIT CONDITIONS. 160 V IC=100µ A VCEO(sus) 140 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA VCB=140V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.7 V IC=150mA, IB=15mA Static Forward Current Transfer Ratio hFE 100 10 Typ Transition Frequency fT 100 Output Capacitance Cobo 1.2 1 0.1 0.8 V - (Volts) VCE=10V 1.0 0.01 0.6 0.4 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) 0.001 0.1 DC 1s 100ms 10ms 1ms 100µs 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area VBE(on) v IC 3 - 111 1000 300 15 IC=150mA, VCE=10V* IC=1A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 110 FMMT455 tf ts ns µS tr 0.4 tf Switching time - (Volts) 0.3 IC/IB=10 0.2 0.1 400 6 IB1=IB2=IC/10 VCE=10V 700 600 td 500 0.1 400 50 1 300 0 0.01 1 IC - Collector Current (Amps) 0.1 0 1 IC - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10 80 - (Volts) 60 0.8 V 20 0.4 0.2 0.001 0.01 0.1 1 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Base Current IB 200 mA 500 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.6 40 h - Normalised Gain (%) 100 VCE=10V SOT23 2 0 0.01 nS 100 td 0.001 B 455 4 3 200 100 0 PARTMARKING DETAIL 5 tr 300 E C 800 ts V 7 ns 500 FMMT455 ISSUE 3 FEBRUARY 1996 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 500 mW TYPICAL CHARACTERISTICS 900 SOT23 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR 0.01 0.001 10 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1 Single Pulse Test at Tamb=25°C 10 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Sustaining Voltage MIN. MAX. UNIT CONDITIONS. 160 V IC=100µ A VCEO(sus) 140 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA VCB=140V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.7 V IC=150mA, IB=15mA Static Forward Current Transfer Ratio hFE 100 10 Typ Transition Frequency fT 100 Output Capacitance Cobo 1.2 1 0.1 0.8 V - (Volts) VCE=10V 1.0 0.01 0.6 0.4 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) 0.001 0.1 DC 1s 100ms 10ms 1ms 100µs 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area VBE(on) v IC 3 - 111 1000 300 15 IC=150mA, VCE=10V* IC=1A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 110