SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT757 TYPICAL CHARACTERISTICS td tr ts tf µs µs 4 1.6 IC /IB=10 IB1=IB2=IC /10 200 3 V 150 100 1.2 0.01 0.1 0.6 1 ABSOLUTE MAXIMUM RATINGS. tr tf ts td tr 0.01 IC - Collector Current (Amps) 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.2 80 - (Volts) 1.0 VCE=5V 60 0.8 40 0.6 20 h 0.4 0 0.0001 0.001 0.01 0.1 0.0001 1 0.001 0.01 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC Single Pulse Test at T 1 1.2 a mb 1 =25°C - (Volts) 1.0 0.1 VCE=5V 0.8 DC 100ms 10ms 1ms 300µs 0.01 V 0.6 0.4 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) 0.001 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area VBE(on) v IC 3 - 241 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -0.5 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). IC /IB =10 V - Normalised Gain (%) tf td 0.4 1 100 C B ts 0.8 2 0 0.001 E 1.0 0.2 0.0001 C COMPLEMENTARY TYPE - FZT657 PARTMARKING DETAIL - FZT757 VC E=10V 1.4 Switching time - (mV) 250 FZT757 ISSUE 4 JANUARY 1996 FEATURES * Low saturation voltage * 300V VCEO 1000 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -300 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -300 V IC=-10mA* -5 V IE=-100µA Emitter-Base Breakdown V(BR)EBO Voltage TYP. MAX. Collector Cut-Off Current ICBO -0.1 µA VCB=-200V Emitter Cut-Off Current IEBO -0.1 µA VEB=-3V Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 V IC=-100mA, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 V IC=-100mA, VCE =-5V* Static Forward Current Transfer Ratio hFE 40 50 Transition Frequency fT 30 Output Capacitance Cobo IC=-10mA, VCE =-5V* IC=-100mA, VCE =-5V* 20 MHz IC=-10mA, VCE =-20V f=20MHz pF VCB=-20V, f=1MHz *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 240 SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT757 TYPICAL CHARACTERISTICS td tr ts tf µs µs 4 1.6 IC /IB=10 IB1=IB2=IC /10 200 3 V 150 100 1.2 0.01 0.1 0.6 1 ABSOLUTE MAXIMUM RATINGS. tr tf ts td tr 0.01 IC - Collector Current (Amps) 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.2 80 - (Volts) 1.0 VCE=5V 60 0.8 40 0.6 20 h 0.4 0 0.0001 0.001 0.01 0.1 0.0001 1 0.001 0.01 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC Single Pulse Test at T 1 1.2 a mb 1 =25°C - (Volts) 1.0 0.1 VCE=5V 0.8 DC 100ms 10ms 1ms 300µs 0.01 V 0.6 0.4 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) 0.001 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area VBE(on) v IC 3 - 241 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -0.5 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). IC /IB =10 V - Normalised Gain (%) tf td 0.4 1 100 C B ts 0.8 2 0 0.001 E 1.0 0.2 0.0001 C COMPLEMENTARY TYPE - FZT657 PARTMARKING DETAIL - FZT757 VC E=10V 1.4 Switching time - (mV) 250 FZT757 ISSUE 4 JANUARY 1996 FEATURES * Low saturation voltage * 300V VCEO 1000 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -300 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -300 V IC=-10mA* -5 V IE=-100µA Emitter-Base Breakdown V(BR)EBO Voltage TYP. MAX. Collector Cut-Off Current ICBO -0.1 µA VCB=-200V Emitter Cut-Off Current IEBO -0.1 µA VEB=-3V Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 V IC=-100mA, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 V IC=-100mA, VCE =-5V* Static Forward Current Transfer Ratio hFE 40 50 Transition Frequency fT 30 Output Capacitance Cobo IC=-10mA, VCE =-5V* IC=-100mA, VCE =-5V* 20 MHz IC=-10mA, VCE =-20V f=20MHz pF VCB=-20V, f=1MHz *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 240