SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage VCEO 100 -100 V Emitter-Base Voltage VEBO 5 -5 V Peak Pulse Current ICM 6 -6 A Continuous Collector Current IC 2 -2 Operating and Storage Temperature Range Tj:Tstg -55 to +150 A °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 375 ZDT6753 ZDT6753 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). UNIT CONDITIONS. PARAMETER SYMBOL MIN. 120 V IC=100µ A, IE =0 Collector-Base Breakdown Voltage V(BR)CBO V(BR)CEO 100 V IC=10mA, IB =0* Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC =0 Collector Cutoff Current ICBO 0.1 10 µA µA Emitter Cutoff Current IEBO 0.1 Collector-Emitter Saturation Voltage VCE(sat) 0.13 0.23 Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 70 100 55 25 200 200 110 55 Transition Frequency fT 140 175 Output Capacitance Cobo Switching Times ton toff PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -120 V IC=-100µ A VCEO(SUS) -100 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A VCB=100V VCB=100V,T amb =100°C Collector Cutoff Current ICBO -0.1 -10 µA µA VCB=-100V VCB=-100V, Tamb=100°C µA VEB=4V, IC =0 Emitter Cutoff Current IEBO -0.1 µA VEB=-4V 0.3 0.5 V IC=1A, IB=100mA* IC=2A, IB=200mA* Collector-Emitter Saturation Voltage VCE(sat) -0.17 -0.30 -0.3 -0.5 V V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* 0.9 1.25 V IC=1A, IB=100mA* Base-Emitter Saturation Voltage VBE(sat) -0.90 -1.25 V IC=-1A, IB=-100mA* 0.8 1 V IC=1A, VCE=2V* Base-Emitter Turn-On Voltage VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V* IC=50mA, VCE=2V IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* Static Forward Current Transfer Ratio hFE 70 100 55 25 200 200 170 55 MHz IC=100mA, VCE=5V f=100MHz Transition Frequency fT 100 140 pF VCB=10V, f=1MHz Output Capacitance Cobo 80 ns Switching Times ton 1200 ns IC=500mA, VCE=10V IB1=IB2=50mA toff TYP. MAX. 300 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT653 datasheet. 3 - 376 TYP. MAX. IC=-50mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=2V* IC=-2A, VCE=-2V* 300 MHz IC=-100mA, VCE=5V f=100MHz pF VCE=-10V, f=1MHz 40 ns 600 ns IC=-500mA, VCC=-10V IB1=IB2=50mA 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT753 datasheet. 3 - 377 ZDT6753 ZDT6753 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). UNIT CONDITIONS. PARAMETER SYMBOL MIN. 120 V IC=100µ A, IE =0 Collector-Base Breakdown Voltage V(BR)CBO V(BR)CEO 100 V IC=10mA, IB =0* Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC =0 Collector Cutoff Current ICBO 0.1 10 µA µA Emitter Cutoff Current IEBO 0.1 Collector-Emitter Saturation Voltage VCE(sat) 0.13 0.23 Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 70 100 55 25 200 200 110 55 Transition Frequency fT 140 175 Output Capacitance Cobo Switching Times ton toff PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -120 V IC=-100µ A VCEO(SUS) -100 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A VCB=100V VCB=100V,T amb =100°C Collector Cutoff Current ICBO -0.1 -10 µA µA VCB=-100V VCB=-100V, Tamb=100°C µA VEB=4V, IC =0 Emitter Cutoff Current IEBO -0.1 µA VEB=-4V 0.3 0.5 V IC=1A, IB=100mA* IC=2A, IB=200mA* Collector-Emitter Saturation Voltage VCE(sat) -0.17 -0.30 -0.3 -0.5 V V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* 0.9 1.25 V IC=1A, IB=100mA* Base-Emitter Saturation Voltage VBE(sat) -0.90 -1.25 V IC=-1A, IB=-100mA* 0.8 1 V IC=1A, VCE=2V* Base-Emitter Turn-On Voltage VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V* IC=50mA, VCE=2V IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* Static Forward Current Transfer Ratio hFE 70 100 55 25 200 200 170 55 MHz IC=100mA, VCE=5V f=100MHz Transition Frequency fT 100 140 pF VCB=10V, f=1MHz Output Capacitance Cobo 80 ns Switching Times ton 1200 ns IC=500mA, VCE=10V IB1=IB2=50mA toff TYP. MAX. 300 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT653 datasheet. 3 - 376 TYP. MAX. IC=-50mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=2V* IC=-2A, VCE=-2V* 300 MHz IC=-100mA, VCE=5V f=100MHz pF VCE=-10V, f=1MHz 40 ns 600 ns IC=-500mA, VCC=-10V IB1=IB2=50mA 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT753 datasheet. 3 - 377