ZTX341 140 0.16 120 hFE - Gain (%) VCE(sat) - Volts IC/IB=10 0.12 0.10 0.08 0.06 C B 100 80 ABSOLUTE MAXIMUM RATINGS. 0 100µA 1mA 10mA 100mA 10µA 100µA 1mA IC IC hFE v IC VCE(sat) v IC 10mA 100mA E E-Line TO92 Compatible 60 40 20 0.04 0.02 10µA ZTX341 ISSUE 2 MARCH 94 FEATURES * High voltage * Low current TYPICAL CHARACTERISTICS 0.14 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 100 mA Base Current IB 20 mA Power Dissipation at Tamb=25°C Ptot 300 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 100 V IC=10µ A, IE=0 V(BR)CEO 100 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=10µ A, IC=0 Collector Cut-Off Current ICBO 0.5 µA VCB=80V, IE=0 Collecor-Emitter Cut-Off Current ICER 0.5 10 µA µA VCE=80V, RBE=50KΩ VCE=80V, RBE=50KΩ Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=2mA, IB=0.1mA Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=2mA, IB=0.1mA Static Forward Current Transfer Ratio hFE 30 Transition Frequency fT 80 Output Capacitance Cobo IC=2mA, VCE=1V 10 MHz IC=5mA, VCE=5V f=60MHz pF VCB=6V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Tamb=100°C 3-165 3-164 ZTX341 140 0.16 120 hFE - Gain (%) VCE(sat) - Volts IC/IB=10 0.12 0.10 0.08 0.06 C B 100 80 ABSOLUTE MAXIMUM RATINGS. 0 100µA 1mA 10mA 100mA 10µA 100µA 1mA IC IC hFE v IC VCE(sat) v IC 10mA 100mA E E-Line TO92 Compatible 60 40 20 0.04 0.02 10µA ZTX341 ISSUE 2 MARCH 94 FEATURES * High voltage * Low current TYPICAL CHARACTERISTICS 0.14 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 100 mA Base Current IB 20 mA Power Dissipation at Tamb=25°C Ptot 300 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 100 V IC=10µ A, IE=0 V(BR)CEO 100 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=10µ A, IC=0 Collector Cut-Off Current ICBO 0.5 µA VCB=80V, IE=0 Collecor-Emitter Cut-Off Current ICER 0.5 10 µA µA VCE=80V, RBE=50KΩ VCE=80V, RBE=50KΩ Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=2mA, IB=0.1mA Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=2mA, IB=0.1mA Static Forward Current Transfer Ratio hFE 30 Transition Frequency fT 80 Output Capacitance Cobo IC=2mA, VCE=1V 10 MHz IC=5mA, VCE=5V f=60MHz pF VCB=6V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Tamb=100°C 3-165 3-164