ZETEX ZTX341

ZTX341
140
0.16
120
hFE - Gain (%)
VCE(sat) - Volts
IC/IB=10
0.12
0.10
0.08
0.06
C
B
100
80
ABSOLUTE MAXIMUM RATINGS.
0
100µA
1mA
10mA
100mA
10µA
100µA
1mA
IC
IC
hFE v IC
VCE(sat) v IC
10mA
100mA
E
E-Line
TO92 Compatible
60
40
20
0.04
0.02
10µA
ZTX341
ISSUE 2 – MARCH 94
FEATURES
* High voltage
* Low current
TYPICAL CHARACTERISTICS
0.14
NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
100
mA
Base Current
IB
20
mA
Power Dissipation at Tamb=25°C
Ptot
300
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
MAX.
UNIT
CONDITIONS.
100
V
IC=10µ A, IE=0
V(BR)CEO
100
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=10µ A, IC=0
Collector Cut-Off Current
ICBO
0.5
µA
VCB=80V, IE=0
Collecor-Emitter Cut-Off
Current
ICER
0.5
10
µA
µA
VCE=80V, RBE=50KΩ
VCE=80V, RBE=50KΩ †
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
V
IC=2mA, IB=0.1mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
V
IC=2mA, IB=0.1mA
Static Forward Current
Transfer Ratio
hFE
30
Transition Frequency
fT
80
Output Capacitance
Cobo
IC=2mA, VCE=1V
10
MHz
IC=5mA, VCE=5V
f=60MHz
pF
VCB=6V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
†Tamb=100°C
3-165
3-164
ZTX341
140
0.16
120
hFE - Gain (%)
VCE(sat) - Volts
IC/IB=10
0.12
0.10
0.08
0.06
C
B
100
80
ABSOLUTE MAXIMUM RATINGS.
0
100µA
1mA
10mA
100mA
10µA
100µA
1mA
IC
IC
hFE v IC
VCE(sat) v IC
10mA
100mA
E
E-Line
TO92 Compatible
60
40
20
0.04
0.02
10µA
ZTX341
ISSUE 2 – MARCH 94
FEATURES
* High voltage
* Low current
TYPICAL CHARACTERISTICS
0.14
NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
100
mA
Base Current
IB
20
mA
Power Dissipation at Tamb=25°C
Ptot
300
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
MAX.
UNIT
CONDITIONS.
100
V
IC=10µ A, IE=0
V(BR)CEO
100
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=10µ A, IC=0
Collector Cut-Off Current
ICBO
0.5
µA
VCB=80V, IE=0
Collecor-Emitter Cut-Off
Current
ICER
0.5
10
µA
µA
VCE=80V, RBE=50KΩ
VCE=80V, RBE=50KΩ †
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
V
IC=2mA, IB=0.1mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
V
IC=2mA, IB=0.1mA
Static Forward Current
Transfer Ratio
hFE
30
Transition Frequency
fT
80
Output Capacitance
Cobo
IC=2mA, VCE=1V
10
MHz
IC=5mA, VCE=5V
f=60MHz
pF
VCB=6V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
†Tamb=100°C
3-165
3-164