PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR ZTX541 ZTX541 ISSUE 2 MARCH 94 0.16 1.2 0.14 1.1 VCE(sat) - Volts VCE(sat) - Volts TYPICAL CHARACTERISTICS 0.12 0.10 0.08 C B 1.0 E E-Line TO92 Compatible 0.9 0.8 ABSOLUTE MAXIMUM RATINGS. 0.06 0.7 0.04 0.6 PARAMETER SYMBOL VALUE UNIT 0.02 10µA 0.5 Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V 100µA 1mA 10mA 100mA 10µA 100µA 1mA 10mA IC IC VBE(sat) V IC VCE(sat) V IC 100mA Continuous Collector Current IC -100 mA Power Dissipation at Tamb=25°C Ptot 300 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage MIN. TYP. UNIT CONDITIONS. -100 V IC=-100µ A V(BR)CEO -100 V IC=-10µ A Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -0.5 µA VCB=-80V Emitter Cut-Off Current ICER -0.5 -10 µA µA VCE=-80V, RBE=50KΩ VCE=-80V, RBE=50KΩ Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-2mA, IB=-0.1mA Base-Emitter Saturation Voltage VBE(sat) -1.0 V IC=-2mA, IB=-0.1mA Static Forward Current hFE Transfer Ratio 30 Transition Frequency fT 80 Output Capacitance Cobo MAX. IC=-2mA, VCE=-1V 10 MHz IC=-5mA, VCE=-5V f=60MHz pF VCB=-6V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-190 3-189 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR ZTX541 ZTX541 ISSUE 2 MARCH 94 0.16 1.2 0.14 1.1 VCE(sat) - Volts VCE(sat) - Volts TYPICAL CHARACTERISTICS 0.12 0.10 0.08 C B 1.0 E E-Line TO92 Compatible 0.9 0.8 ABSOLUTE MAXIMUM RATINGS. 0.06 0.7 0.04 0.6 PARAMETER SYMBOL VALUE UNIT 0.02 10µA 0.5 Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V 100µA 1mA 10mA 100mA 10µA 100µA 1mA 10mA IC IC VBE(sat) V IC VCE(sat) V IC 100mA Continuous Collector Current IC -100 mA Power Dissipation at Tamb=25°C Ptot 300 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage MIN. TYP. UNIT CONDITIONS. -100 V IC=-100µ A V(BR)CEO -100 V IC=-10µ A Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -0.5 µA VCB=-80V Emitter Cut-Off Current ICER -0.5 -10 µA µA VCE=-80V, RBE=50KΩ VCE=-80V, RBE=50KΩ Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-2mA, IB=-0.1mA Base-Emitter Saturation Voltage VBE(sat) -1.0 V IC=-2mA, IB=-0.1mA Static Forward Current hFE Transfer Ratio 30 Transition Frequency fT 80 Output Capacitance Cobo MAX. IC=-2mA, VCE=-1V 10 MHz IC=-5mA, VCE=-5V f=60MHz pF VCB=-6V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-190 3-189