ZETEX ZTX541

PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ZTX541
ZTX541
ISSUE 2 – MARCH 94
0.16
1.2
0.14
1.1
VCE(sat) - Volts
VCE(sat) - Volts
TYPICAL CHARACTERISTICS
0.12
0.10
0.08
C
B
1.0
E
E-Line
TO92 Compatible
0.9
0.8
ABSOLUTE MAXIMUM RATINGS.
0.06
0.7
0.04
0.6
PARAMETER
SYMBOL
VALUE
UNIT
0.02
10µA
0.5
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
100µA
1mA
10mA
100mA
10µA
100µA
1mA
10mA
IC
IC
VBE(sat) V IC
VCE(sat) V IC
100mA
Continuous Collector Current
IC
-100
mA
Power Dissipation at Tamb=25°C
Ptot
300
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
MIN. TYP.
UNIT
CONDITIONS.
-100
V
IC=-100µ A
V(BR)CEO
-100
V
IC=-10µ A
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-100µ A
Collector Cut-Off
Current
ICBO
-0.5
µA
VCB=-80V
Emitter Cut-Off Current ICER
-0.5
-10
µA
µA
VCE=-80V, RBE=50KΩ
VCE=-80V, RBE=50KΩ
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
V
IC=-2mA, IB=-0.1mA
Base-Emitter
Saturation Voltage
VBE(sat)
-1.0
V
IC=-2mA, IB=-0.1mA
Static Forward Current hFE
Transfer Ratio
30
Transition Frequency
fT
80
Output Capacitance
Cobo
MAX.
IC=-2mA, VCE=-1V
10
MHz
IC=-5mA, VCE=-5V
f=60MHz
pF
VCB=-6V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-190
3-189
PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ZTX541
ZTX541
ISSUE 2 – MARCH 94
0.16
1.2
0.14
1.1
VCE(sat) - Volts
VCE(sat) - Volts
TYPICAL CHARACTERISTICS
0.12
0.10
0.08
C
B
1.0
E
E-Line
TO92 Compatible
0.9
0.8
ABSOLUTE MAXIMUM RATINGS.
0.06
0.7
0.04
0.6
PARAMETER
SYMBOL
VALUE
UNIT
0.02
10µA
0.5
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
100µA
1mA
10mA
100mA
10µA
100µA
1mA
10mA
IC
IC
VBE(sat) V IC
VCE(sat) V IC
100mA
Continuous Collector Current
IC
-100
mA
Power Dissipation at Tamb=25°C
Ptot
300
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
MIN. TYP.
UNIT
CONDITIONS.
-100
V
IC=-100µ A
V(BR)CEO
-100
V
IC=-10µ A
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-100µ A
Collector Cut-Off
Current
ICBO
-0.5
µA
VCB=-80V
Emitter Cut-Off Current ICER
-0.5
-10
µA
µA
VCE=-80V, RBE=50KΩ
VCE=-80V, RBE=50KΩ
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
V
IC=-2mA, IB=-0.1mA
Base-Emitter
Saturation Voltage
VBE(sat)
-1.0
V
IC=-2mA, IB=-0.1mA
Static Forward Current hFE
Transfer Ratio
30
Transition Frequency
fT
80
Output Capacitance
Cobo
MAX.
IC=-2mA, VCE=-1V
10
MHz
IC=-5mA, VCE=-5V
f=60MHz
pF
VCB=-6V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-190
3-189