PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX749 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Transition Frequency fT Output Cpacitance Cobo 55 Switching Times ton toff 100 TYP. MAX. UNIT CONDITIONS. MHz IC=-100mA, VCE=-5V f=100MHz pF VCB=-10V f=1MHz 40 ns 450 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA 160 100 THERMAL CHARACTERISTICS SYMBOL MAX. UNIT 175 116 70 °C/W °C/W °C/W Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance E-Line TO92 Compatible PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -35 V IC=-100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB=-30V VCB=-30V,T amb =100°C Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V, IE=0 TYP. MAX. Collector-Emitter Saturation Voltage VCE(sat) -0.12 -0.23 -0.3 -0.5 V V IC=1A, IB=-100mA* IC=2A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 -1.25 V IC=1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 -1 V IC=-1A, VCE=-2V* Static Forward Current hFE Transfer Ratio 70 100 75 15 200 200 150 50 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-255 E D=t1/tP tP 100 C B ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PARAMETER ZTX749 ISSUE 1 APRIL 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage 3-254 IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX749 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Transition Frequency fT Output Cpacitance Cobo 55 Switching Times ton toff 100 TYP. MAX. UNIT CONDITIONS. MHz IC=-100mA, VCE=-5V f=100MHz pF VCB=-10V f=1MHz 40 ns 450 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA 160 100 THERMAL CHARACTERISTICS SYMBOL MAX. UNIT 175 116 70 °C/W °C/W °C/W Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance E-Line TO92 Compatible PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -35 V IC=-100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB=-30V VCB=-30V,T amb =100°C Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V, IE=0 TYP. MAX. Collector-Emitter Saturation Voltage VCE(sat) -0.12 -0.23 -0.3 -0.5 V V IC=1A, IB=-100mA* IC=2A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 -1.25 V IC=1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 -1 V IC=-1A, VCE=-2V* Static Forward Current hFE Transfer Ratio 70 100 75 15 200 200 150 50 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-255 E D=t1/tP tP 100 C B ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PARAMETER ZTX749 ISSUE 1 APRIL 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage 3-254 IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* ZTX749 TYPICAL CHARACTERISTICS td tr tf ns 1.6 160 1.4 ts 140 ns 1200 120 Switching time VCE(sat) - (Volts) 1.8 1.2 1.0 0.8 0.6 IC/IB=100 ts 1000 100 tf 80 600 60 0.4 40 0.2 0 IB1=IB2=IC/10 VCE=-10V 200 IC/IB=10 0.001 0.01 0.1 1 tr td 20 0 0.01 10 IC - Collector Current (Amps) 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.2 1.0 VCE=2V 160 VBE(sat) - (Volts) hFE - Gain 200 120 80 40 0.001 0.01 0.1 1 IC/IB=10 0.8 0.6 IC/IB=100 0.4 0.001 10 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC IC - Collector Current (Amps) 1.0 VCE=2V 0.8 0.6 0.4 0.001 0.01 0.1 1 1 10 Single Pulse Test at Tamb=25°C 10 1.2 VBE - (Volts) 0.01 1.0 0.1 D.C. 1s 100ms 10ms 1.0ms 10 0.01 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-256 100