SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424Z ISSUE 1 - NOVEMBER 1998 FEATURES * 240 Volt BVDS * Extremely low RDS(on)=4.3Ω * Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches * Electronic hook switches * Battery powered equipment * Telecoms and high voltage dc-dc convertors PARTMARKING DETAILS COMPLEMENTARY TYPE - D S D G N24 ZVP4424Z ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 240 V Continuous Drain Current at Tamb=25°C ID 300 mA Pulsed Drain Current IDM 1.0 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1† W -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm Refer to the handling instructions for soldering surface mount components. ZVN4424Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 240 TYP MAX. UNIT Gate-Source Threshold Voltage VGS(th) 0.8 1.3 Gate-Body Leakage IGSS On State Drain-Current ID(on) 0.8 1.4 Zero Gate Voltage Drain Current IDSS Static Drain-Source On-State Resistance RDS(on) Forward Transconductance (1) (2) gfs Input Capacitance (2) Ciss 110 200 pF Common Source Output Capacitance (2) Coss 15 25 pF Reverse Transfer Capacitance (2) Crss 3.5 15 pF Turn-On Delay Time (2)(3) td(on) 2.5 5 ns 1.8 100 4 4.3 0.4 CONDITIONS. V ID=1mA, VGS=0V V ID=1mA, VDS= VGS nA VGS=± 40V, VDS=0V A VDS=10V, VGS=10V 10 100 µA µA VDS=240 V, VGS=0V VDS=190 V, VGS=0V, T=125°C 5.5 6 Ω Ω VGS=10V,ID=500mA* VGS=2.5V,ID=100mA* S VDS=10V,ID=0.5A 0.75 Rise Time (2)(3) tr 5 8 ns Turn-Off Delay Time (2)(3) td(off) 40 60 ns Fall Time (2)(3) tf 16 25 ns VDS=25V, VGS=0V, f=1MHz VDD ≈50V, ID =0.25A, VGEN=10V (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device TYPICAL CHARACTERISTICS 1 0.1 DC 1s 100ms 10ms 1ms 100µs 0.01 0.001 1 10 100 VDS - Drain Source Voltage (V) Safe Operating Area 1k ZVN4424Z TYPICAL CHARACTERISTICS 1.6 1.6 300µs Pulsed Test VGS=10V 5V 4V 1.2 1.0 3V 0.8 0.6 2.5V 0.4 2V 0.2 0 0 2 4 6 8 1.4 I - Drain Current (Amps) I - Drain Current (Amps) 1.4 1.2 1.0 0.8 300µs Pulsed Test VDS=10V 0.6 0.4 0.2 0 0 10 6 8 10 Transfer Characteristics 800 800 g -Transconductance (mS) g -Transconductance (mS) 4 VGS - Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Saturation Characteristics 600 400 300µs Pulsed Test VDS=10Vz 200 600 400 300µs Pulsed Test VDS=10V 200 fs fs 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 Transconductance v drain current 100 1 2 3 2.4 VGS=2V and V 2.5V 3V 10V VGS=10V ID=0.5A 300µs Pulsed Test 1.0 1.0 1.6 1.2 Normalised R 10 0.1 5 Transconductance v gate-source voltage 2.0 0.01 4 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) RDS(on)-Drain Source On Resistance 2 10 ID-Drain Current (Amps) On-resistance vs Drain Current 0.8 VGS=VDS ID=1mA 0.4 0 -50 -25 0 25 50 75 100 125 150 Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature ZVN4424Z TYPICAL CHARACTERISTICS 200 -Gate Source Voltage (Volts) 14 Note:VGS=0V 150 Ciss 100 Coss 50 Crss G 0.1 1 VDD= 20V 50V 100V 12 Note:ID=400mA 10 8 6 4 2 S 0 V C-Capacitance (pF) 250 10 100 VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage 0 0 2 4 6 8 10 12 14 16 18 Q-Gate Charge (nC) Gate charge v gate-source voltage 20