SOT89 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4424Z ISSUE 1 - NOVEMBER 1998 FEATURES * 240 Volt VDS * RDS(on)= 8.8Ω typical at VGS=-3.5V * Low threshold and Fast switching APPLICATIONS * Electronic hook switches * Telecoms and Battery powered equipment COMPLEMENTARY TYPE PARTMARKING DETAIL - D S D G ZVN4424Z 24P ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -240 V Continuous Drain Current at Tamb=25°C ID -200 mA Pulsed Drain Current IDM -1.0 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb =25°C Ptot 1† W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm Refer to the handling instructions for soldering surface mount components. ZVP4424Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -240 Gate-Source Threshold Voltage VGS(th) -0.7 Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Static Drain-Source On-State Resistance RDS(on) Forward Transconductance (1) (2) gfs -0.75 TYP -1.4 MAX. UNIT V ID=-1mA, VGS=0V V ID=-1mA, VDS= VGS 100 nA VGS=± 40V, VDS=0V -10 -100 µA µA VDS=-240V, VGS=0V VDS=-190V, VGS=0V, T=125°C A VDS=-10V, VGS=-10V Ω Ω VGS=-10V, ID=-200mA VGS=-3.5V, ID=-100mA mS VDS=-10V,ID=-0.2A -2.0 -1.0 7.1 8.8 CONDITIONS. 9 11 125 Input Capacitance (2) Ciss 100 200 pF Common Source Output Capacitance (2) Coss 18 25 pF Reverse Transfer Capacitance (2) Crss 5 15 pF Turn-On Delay Time (2)(3) td(on) 8 15 ns Rise Time (2)(3) tr 8 15 ns Turn-Off Delay Time (2)(3) td(off) 26 40 ns Fall Time (2)(3) tf 20 30 ns VDS=-25V, VGS=0V, f=1MHz VDD ≈−50V, ID =-0.25A, VGEN=-10V (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device TYPICAL CHARACTERISTICS 1 0.1 DC 1s 100ms 10ms 1ms 100µs 0.01 0.001 1 10 100 VDS - Drain Source Voltage (V) Safe Operating Area 1k ZVP4424Z TYPICAL CHARACTERISTICS -1.2 -5V -0.8 -4V -0.6 -0.4 -3V -2.5V -0.2 -2V -1.0 I - Drain Current (Amps) -1.0 I - Drain Current (Amps) -1.2 300µs Pulsed Test VGS=-10V -0.8 -0.6 VDS=-10V 300µs Pulsed Test -0.4 -0.2 0 0 0 -2 -4 -6 -8 0 -10 400 -6 -8 -10 400 g -Transconductance (mS) g -Transconductance (mS) -4 Transfer Characteristics Saturation Characteristics 300 200 300µs Pulsed Test VDS=-10V 100 300 200 300µs Pulsed Test VDS=-10V 100 fs sf 0 0 -0.2 -0.4 -0.6 -0.8 0 -1.0 0 Transconductance v drain current 100 -4 -6 Transconductance v gate-source voltage 2.4 -2.5V VGS=-2V -2 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) VGS=-10V ID=0.2A 2.2 2.0 and V -3V -10V 1.8 1.6 1.4 1.2 10 1.0 300µs Pulsed Test 1 -0.01 -0.1 -1 -10 Normalised R RDS(on)-Drain Source On Resistance -2 VGS - Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) ID-Drain Current (Amps) On-resistance vs Drain Current 0.8 0.6 VGS=VDS ID=-1mA 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 Junction Temperature (°C) Normalised RDS(on) and VG S(th) vs Temperature 3 - 440 ZVP4424Z TYPICAL CHARACTERISTICS -Gate Source Voltage (Volts) Note:VGS=0V 250 200 Ciss 150 100 Coss 50 S G Crss 0 -0.01 -1 V C-Capacitance (pF) 300 -10 -100 VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage 0 -2 -4 -6 -8 VDS= -10 -12 -20V -50V -100V -14 Note:ID=- 0.25A -16 0 1 2 3 4 Q-Gate Charge (nC) Gate charge v gate-source voltage 5