DIODES ZXGD3104N8TC

A Product Line of
Diodes Incorporated
ZXGD3104N8
SYNCHRONOUS MOSFET CONTROLLER IN SO8
Description
Features
The ZXGD3104 is intended to drive MOSFETS configured as ideal
diode replacements. The device is comprised of a differential amplifier
detector stage and high current driver. The detector monitors the
reverse voltage of the MOSFET such that if body diode conduction
occurs a positive voltage is applied to the MOSFET’s Gate pin.
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5-25V Vcc range
Operating up to 250kHz
Suitable for Discontinuous Mode (DCM), Critical Conduction
Mode (CrCM) and Continuous Mode (CCM) operation
Turn-off propagation delay 15ns and turn-off time 20ns.
Proportional Gate Drive
Detector threshold voltage -10mV
Standby current 5mA
“Lead-Free”, RoHS Compliant (Note 1)
Halogen and Antimony free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Applications
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•
•
•
•
•
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•
Mechanical Data
Once the positive voltage is applied to the Gate the MOSFET switches
on. The detectors’ output voltage is then proportional to the MOSFET
Drain-Source voltage and this is applied to the Gate via the driver.
This action provides a rapid MOSFET turn off at zero Drain current.
Flyback Converters in:
o
≥90W Laptop Adaptors
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•
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Case: SO-8
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Typical Configuration
SO-8
DNC
DRAIN
REF
BIAS
GATEL
GND
GATEH
VCC
Top View
Pin-Out
Ordering Information (Note 3)
Product
ZXGD3104N8TC
Notes:
Marking
ZXGD3104
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
1. No purposefully added lead
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZXGD
3104
YY WW
ZXGD3104N8
Document Number DS35546 Rev. 1 – 2
ZXGD
3104
YY
WW
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= Product Type Marking Code, Line 1
= Product Type Marking Code, Line 2
= Year (ex: 11 = 2011)
= Week (01 - 53)
November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXGD3104N8
Functional Block Diagram
Pin No.
Name
Description and function
Do not connect
1
DNC
2
REF
3
GATEL
4
GATEH
Leave pin floating.
Reference
This pin is connected to VCC via resistor, RREF. Select RREF to source 2.16mA into this pin. Refer to Table
1, in Application Information section.
Gate turn off
This pin sinks current, ISINK, from the synchronous MOSFET Gate.
Gate turn on
This pin sources current, ISOURCE, to the synchronous MOSFET Gate.
Power Supply
5
VCC
This is the supply pin. It is recommended to decouple this point to ground closely with a ceramic
capacitor.
6
GND
7
BIAS
8
DRAIN
Ground
This is the ground reference point. Connect to the synchronous MOSFET Source terminal.
Bias
This pin is connected to VCC via resistor, RBIAS. Select RBIAS to source 3mA into this pin. Refer to Table 1,
in Application Information section.
Drain connection
This pin connects directly to the synchronous MOSFET Drain terminal.
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ZXGD3104N8
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Supply voltage, relative to GND
Drain pin voltage
Gate output voltage
Gate Driver peak source current
Gate Driver peak sink current
Reference voltage
Reference current
Bias voltage
Bias current
Symbol
VCC
VD
VG
ISOURCE
ISINK
VREF
IREF
VBIAS
IBIAS
Value
25
-3 to 180
-3 to VCC + 3
2.5
7
VCC
25
VCC
100
Unit
V
V
V
A
A
V
mA
V
mA
Value
490
Unit
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
(Note 4)
Power Dissipation
Linear derating factor
3.92
655
(Note 5)
PD
(Note 6)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating Temperature Range
Storage Temperature Range
Notes:
720
mW
mW/°C
5.76
785
(Note 7)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
5.24
6.28
RθJA
RθJL
TJ
TSTG
255
191
173
159
135
-40 to +150
-50 to +150
°C/W
°C/W
°C
4. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
5. Same as note (4), except pin 5 (VCC) and pin 6 (GND) are both connected to separate 5mm x 5mm 1oz copper heatsinks.
6. Same as note (5), except both heatsinks are 10mm x 10mm.
7. Same as note (5), except both heatsinks are 15mm x 15mm.
8. Thermal resistance from junction to solder-point at the end of each lead on pin 5 (VCC) and pin 6 (GND).
ZXGD3104N8
Document Number DS35546 Rev. 1 – 2
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Max Power Dissipation (W)
Thermal Derating Curve
0.8
15mm x 15mm
0.7
10mm x 10mm
0.6
0.5
5mm x 5mm
0.4
Minimum
Layout
0.3
0.2
0.1
0.0
0
20
40
60
80
100 120 140 160
Junction Temperature (°C)
Derating Curve
ESD Rating
Characteristic
Value
ESD for Human Body Model
2000
ESD for Machine Model
300
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Unit
V
November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXGD3104N8
Electrical Characteristics @TA = 25°C unless otherwise specified
VCC = 19V; RBIAS = 6.3kΩ; RREF = 8.5kΩ
Characteristic
Input and Supply
Quiescent current
Gate Driver
Turn-off Threshold Voltage (Note 9 & 10)
(Note 9 & 10)
Gate output voltage
(Note 9 & 11)
Symbol
Min
Typ
Max
Unit
IQ
-
5.16
-
mA
VD ≥ 0V
VT
VG(off)
-16
0
12.5
17
-10
0.73
14
18
0
1.0
VCC
VCC
mV
VG = 1V
VD ≥ 1V
VD = -50mV
VD = -100mV
175
11
335
530
35
250
15
480
760
50
325
20
625
990
65
VG
Switching Performance for QG(tot) = 124nC (Note 12)
Turn-on propagation delay
td(rise)
Turn-off propagation delay
td(fall)
Gate rise time
tr
Gate fall time
tf
Notes:
V
Test Condition
-
ns
Refer to switching
From 10% of VG to 10V waveforms in Fig. 1
From 10% to 90% of VG
Continuous Conduction Mode
9.GATEH connected to GATEL
10.RH = 100kΩ, RL = O/C
11.RL = 100kΩ, RH = O/C
12. refer to test circuit below
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ZXGD3104N8
Descriptions of the normal operation
The operation of the controller is described step-by-step with reference to the timing diagram in Figure 1.
1. The controller monitors the MOSFET Drain-Source voltage.
2. When, due to transformer action, the MOSFET body diode is forced to conduct there is approximately -0.8V on the
Drain pin.
3. The detector outputs a positive voltage with respect to ground, this voltage is then fed to the MOSFET driver stage
and current is sourced out of the GATE pin.
4. The controller goes into proportional gate drive control — the GATE output voltage is proportional to the onresistance-induced Drain-Source voltage drop across the MOSFET. Proportional gate drive ensures that MOSFET
conducts for majority of the conduction cycle and minimizes body diode conduction time.
5. As the Drain current decays linearly toward zero, proportional gate drive control reduces the Gate voltage so the
MOSFET can be turned off rapidly at zero current crossing. The GATE voltage is removed when the Drain-Source
voltage crosses the detection threshold voltage to minimize reverse current flow.
6. At zero Drain current, the controller GATE output voltage is pulled low to VG(off) to ensure that the MOSFET is off.
Figure 1. Timing diagram for a critical conduction mode Flyback converter
ZXGD3104N8
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Typical Electrical Characteristics @TA = 25°C unless otherwise specified
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Continued - Typical Electrical Characteristics @TA = 25°C unless otherwise specified
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Application Information
The purpose of the ZXGD3104 is to drive a MOSFET as a low-VF Schottky diode replacement in offline power
converters. When combined with a low RDS(ON) MOSFET, it can yield significant power efficiency improvement, whilst
maintaining design simplicity and incurring minimal component count. Figure 2 shows typical configuration of
ZXGD3104 for synchronous rectification in a 19V output Flyback Adaptor.
Figure 2. Example connections in Flyback power supply
Figure 3 shows operating waveforms for ZXGD3104 driving a MOSFET with Qg(TOT) = 124nC in a 19V output Flyback
converter operating in critical conduction mode.
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Typical waveforms
Fig 3a: Critical conduction mode, operating for MOSFET with Qg(TOT) =124nC
Fig 3b: Typical switching waveform
Fig 3c: Close up of typical turn off waveform
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Design considerations
It is advisable to decouple the ZXGD3104 closely to VCC and ground due to the possibility of high peak gate currents
with a 1μF X7R type ceramic capacitor C1 as shown in Figure 2. Also the ground return loop should be as short as
possible.
To minimize parasitic inductance-induced premature turn-off of the synchronous controller always keep the PCB
track length between ZXGD3104’s Drain input and MOSFET’s Drain to less than 10mm. Low internal inductance
SMD MOSFET packages are also recommended for high switching frequency power conversion to minimize
MOSFET body diode conduction loss.
The Gate pins should be as close to the MOSFET’s gate as possible. External gate resistors are optional. They can
be inserted to control the rise and fall time which may help with EMI issues.
The careful selection of external resistors RREF and RBIAS is important to the optimum device operation. Select a value
for resistor RREF and RBIAS from Table 1 based on the desired Vcc value. This provides the typical ZXGD3104’s
detection threshold voltage of -10mV.
Table 1. Recommended resistor values for various supply voltages
ZXGD3104N8
Document Number DS35546 Rev. 1 – 2
VCC
RBIAS
RREF
5V
10V
12V
15V
19V
1.6 kΩ
3.3 kΩ
3.9 kΩ
5.1 kΩ
6.3 kΩ
2 kΩ
4.3 kΩ
5.1 kΩ
6.8 kΩ
8.5 kΩ
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ZXGD3104N8
h x 45°
Package Outline Dimensions
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Max.
Max.
Min.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
θ
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
Min.
1.27 BSC
Suggested Pad Layout
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.27
0.050
mm
inches
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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