A Product Line of Diodes Incorporated DMP1245UFCL 12V P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits ADVANCE INFORMATION V(BR)DSS RDS(on) max ID max 29mΩ @VGS = -4.5V -6.6 A 45mΩ @VGS = -2.5V -5.3 A 60mΩ @VGS = -1.8V -4.6 A 100mΩ @VGS = -1.5V -3.5 A • • • • -12V • • Mechanical Data Application • • This device provides a high performance, low RDS(ON) P channel MOSFETs in the thermally and space efficient X1-DFN1616-6 package. The low RDS(ON) of this MOSFET ensures conduction losses are kept making it ideal for use as a: • • Typical off board profile of 0.5mm - ideally suited for thin applications Low RDS(ON) – minimizes conduction losses 2 PCB footprint of 2.56mm 3kV ESD Protected Gate – protected against human borne ESD “Lead-Free”, RoHS Compliant (Note 1) "Green" Device (Note 2) • • • • Battery disconnect switch Load switch for power management functions Case: X1-DFN1616-6 Type E Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Lead Free Plating (NiPdAu Finish over Copper leadframe). Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.04 grams (approximate) Drain X1-DFN1616-6 Type E Pin 1 Gate Gate Protection Diode Bottom View Top View Source Top View Pin-Out Device symbol Ordering Information (Note 3) Product DMP1245UFCL-7 Notes: Marking P5 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information P5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) P5 YM Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP1245UFCL Document number: DS35505 Rev. 1 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 7 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP1245UFCL Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Symbol VDSS VGSS @TA = 25°C @TA = 70°C TP = 10μs Pulsed Drain Current Thermal Characteristics Units V V Value 613 1.7 204 74 -55 to +150 Units mW W IDM A A @TA = 25°C unless otherwise specified Total Power Dissipation Thermal Resistance, Junction to Ambient Symbol (Note 4) (Note 5) (Note 4) (Note 5) PD RθJA Operating and Storage Temperature Range Notes: Value -12 ±8 -6.6 -5.25 -16.67 ID Characteristic TJ, TSTG °C/W °C 4. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state condition. 5. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady state condition. Thermal Characteristics 100 90 80 100 RDS(ON) Limited Single Pulse RθJA=205°C/W RθJA(t)=RθJA*r(t) T J-T A=P*RθJA (t) ID(A) @ PW=10µs ID ID, DRAIN CURRENT (A) P(pk), PEAK TRANSIENT POWER (W) ADVANCE INFORMATION Maximum Ratings @TA = 25°C unless otherwise specified 70 60 50 40 30 20 10 W= 1m )@ P s W= 10 ID(A) @ DC 1 0µ s ID(A) @PW =10s ID(A) @PW =1s ID(A) @PW =100ms 0.1 ID(A) @PW =10ms T A = 25 °C Single Pulse 10 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation Document number: DS35505 Rev. 1 - 2 @ P I D (A T J(MAX) = 150°C DMP1245UFCL (A ) 2 of 7 www.diodes.com 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 SOA, Safe Operation Area 100 November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP1245UFCL ADVANCE INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 0.1 0.01 RθJA (t)=r(t) * RθJA RθJA = 205°C/W Duty Cycle, D=t1/ t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 03 Transient Thermal Resistance 10 100 1000 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±10 V µA µA VGS = 0V, ID = -250µA VDS = -12.0V, VGS = 0V VGS = ±8.0V, VDS = 0V VGS(th) RDS (ON) -0.6 25 31 40 60 3 - -0.95 29 45 60 100 -1.0 V Static Drain-Source On-Resistance -0.3 ⎯ ⎯ ⎯ ⎯ 0.4 - VDS = VGS, ID = -250µA VGS = -4.5V, ID = - 4A VGS = -2.5V, ID = - 3.5A VGS = -1.8V, ID = - 1A VGS = -1.5 V, ID = - 0.5A VDS = -5V, ID = -2A VGS = 0V, ID = -2A - 1357.4 499 273.6 14.26 16.1 26.1 1.71 20.48 15.2 33.11 219.4 217.64 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance |Yfs| VSD Ciss Coss Crss Rg Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Qg Qgs Qgd tD(on) tr tD(off) tf mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V ID = -1A, VDS = -10V VGS = -8V VGS = -2.5V, VDS = -10V ID = -180mA, RG = 2.0Ω, 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMP1245UFCL Document number: DS35505 Rev. 1 - 2 3 of 7 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP1245UFCL 20 20 VGS = 2.0V VGS = 1.8V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 16 VGS = 2.5V VGS = 1.5V 12 VGS = 4.5V 8 VGS = 1.2V VGS = 8.0V 12 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristics 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.06 VGS = -1.5V 0.05 VGS = -1.8V 0.04 VGS = -2.5V 0.03 VGS = -4.5V VGS = -3.5V 0.02 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 1.7 1.5 VGS = -2.5V ID = -5A 1.3 1.1 VGS = -4.5V ID = -10A 0.9 0.7 0.04 T A = 150°C TA = 125°C TA = 85°C TA = 25°C 0.02 T A = -55°C 0 0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 20 0.06 0.05 VGS = -2.5V ID = -5A 0.04 0.03 VGS = -4.5V ID = -10A 0.02 0.01 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature Document number: DS35505 Rev. 1 - 2 3.0 VGS = 4.5V 0.5 -50 DMP1245UFCL 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristic 0.06 20 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 8 4 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION 16 4 of 7 www.diodes.com 0 -50 -25 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) 150 Fig. 9 On-Resistance Variation with Temperature November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP1245UFCL 1.2 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 1.0 12 0.8 0.6 ID = -1mA 0.4 ID = -250µA 0.2 TA = 25°C 8 4 0 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 100,000 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 2,500 CT, JUNCTION CAPACITANCE (pF) T A = 150°C IDSS, LEAKAGE CURRENT (nA) T A = 125°C 10,000 TA = 85°C 1,000 100 TA = 25°C 10 2,000 CISS 1,500 1,000 COSS 500 CRSS 1 0 0 2 4 6 8 10 12 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Drain-Source Leakage Current vs. Voltage 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Junction Capacitance 20 8 VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION 1.4 6 VDS = -10V ID = -1A 4 2 0 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics DMP1245UFCL Document number: DS35505 Rev. 1 - 2 30 5 of 7 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP1245UFCL Package Outline Dimensions ADVANCE INFORMATION A1 A3 A D D2 b1 E E2 L1 L(2X) e Z(4X) b(6X) X1-DFN1616-6 Type E Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 — — 0.13 b 0.20 0.30 0.25 b1 0.10 0.30 0.20 D 1.55 1.65 1.60 D2 0.57 0.77 0.67 E 1.55 1.65 1.60 E2 1.30 1.50 1.40 e — — 0.50 L 0.25 0.35 0.30 L1 0.52 0.72 0.62 Z — — 0.175 All Dimensions in mm Suggested Pad Layout X3 Y (2x) Dimensions C X X1 X2 X3 Y Y1 Y2 Y1 Y2 X2 X1 X (6x) DMP1245UFCL Document number: DS35505 Rev. 1 - 2 Value (in mm) 0.500 0.300 0.200 0.720 0.400 0.475 0.620 1.900 C 6 of 7 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP1245UFCL IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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