DIODES ZXM62N03G

ZXM62N03G
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7A
DESCRIPTION
This new generation of High Density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power management
applications.
SOT223
FEATURES
· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· SOT223 package
APPLICATIONS
· DC-DC Converters
· Audio Output Stage
· Relay and Soleniod driving
· Motor Control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXM62N03GTA
7”
12mm
1000 units
ZXM62N03GTC
13”
12mm
4000 units
Top View
DEVICE MARKING
· ZXM6
2N03
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ZXM62N03G
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
LIMIT
30
UNIT
V
Gate-Source Voltage
V GS
⫾20
V
Continuous Drain Current (V GS =10V; T A =25°C)(b)
(V GS =10V; T A =70°C)(b)
(V GS =10V; T A =25°C)(a)
ID
4.7
3.8
3.4
A
Pulsed Drain Current (c)
I DM
16
A
Continuous Source Current (Body Diode) (b)
IS
2.6
A
Pulsed Source Current (Body Diode)(c)
I SM
16
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
2.0
16
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
3.9
31
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
62.5
°C/W
Junction to Ambient (b)
R θJA
32
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
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ZXM62N03G
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ZXM62N03G
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
TYP.
MAX.
UNIT CONDITIONS.
STATIC
I D =250µA, V GS =0V
1
␮A
V DS =30V, V GS =0V
100
nA
1.0
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
V
0.11
0.15
1.1
g fs
V GS =⫾20V, V DS =0V
V
I =250␮A, V DS = V GS
⍀
⍀
V GS =10V, I D =2.2A
V GS =4.5V, I D =1.1A
S
V DS =15V,I D =1.1A
D
DYNAMIC (3)
Input Capacitance
C iss
380
pF
Output Capacitance
C oss
90
pF
Reverse Transfer Capacitance
C rss
30
pF
Turn-On Delay Time
t d(on)
2.9
ns
Rise Time
tr
5.6
ns
Turn-Off Delay Time
t d(off)
11.7
ns
Fall Time
tf
6.4
ns
Total Gate Charge
Qg
9.6
nC
Gate-Source Charge
Q gs
1.7
nC
Gate-Drain Charge
Q gd
2.8
nC
Diode Forward Voltage (1)
V SD
0.95
V
T J =25⬚C, I S =2.2A,
V GS =0V
Reverse Recovery Time (3)
t rr
18.8
ns
T J =25⬚C, I F =2.2A,
di/dt= 100A/␮s
Reverse Recovery Charge (3)
Q rr
11.4
nC
V DS =25V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =15V, I D =2.2A
R G =6.0⍀, V GS =10V
V DS =24V,V GS =10V,
I D =2.2A
SOURCE-DRAIN DIODE
NOTES
(1) Measured under pulsed conditions. Width=300␮s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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ZXM62N03G
TYPICAL CHARACTERISTICS
100
100
+150°C
10V 8V 7V 6V
ID - Drain Current (A)
ID - Drain Current (A)
+25°C
VGS
5V
4.5V
10
4V
3.5V
1
3V
0.1
0.1
1
3V
1
0.1
10
100
Output Characteristics
Normalised RDS(on) and VGS(th)
T=150°C
T=25°C
1
2.5
3
3.5
4
4.5
5
5.5
6
6.5
1.6
1.4
RDS(on)
1.2
VGS=10V
ID=2.2A
1.0
VGS=VDS
ID=250uA
0.8
VGS(th)
0.6
0.4
-100
-50
0
100
50
150
200
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
v Temperature
10
ISD - Reverse Drain Current (A)
ID - Drain Current (A)
RDS(on) - Drain-Source On-Resistance (W )
1
Output Characteristics
10
1
VGS=3V
VGS=4.5V
0.1
VGS=10V
0.01
4.5V
4V
VDS - Drain-Source Voltage (V)
VDS=10V
2
5V
VDS - Drain-Source Voltage (V)
100
0.1
VGS
3.5V
0.1
100
10
10V 8V 7V 6V
10
1
0.1
10
100
100
10
1
T=150°C
T=25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID - Drain Current (A)
VSD - Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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ZXM62N03G
TYPICAL CHARACTERISTICS
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
900
Vgs=0V
f=1Mhz
800
700
Ciss
Coss
Crss
600
500
400
300
200
100
0
0.1
1
10
100
5
ID=2.2A
4.5
4
3.5
VDS=16V
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
VDS - Drain Source Voltage (V)
Q -Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
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ZXM62N03G
PACKAGE OUTLINE
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
Min
Max
Min
Max
A
6.3
6.7
0.248
0.264
B
3.3
3.7
0.130
0.146
C
-
1.7
-
0.067
D
0.6
0.8
0.024
0.031
E
2.9
3.1
0.114
0.122
F
0.24
0.32
0.009
0.13
G
NOM 4.6
NOM 0.181
H
0.85
1.05
0.033
0.041
K
0.02
0.10
0.0008
0.004
L
6.7
7.3
0.264
0.287
M
NOM 2.3
NOM 0.0905
PAD LAYOUT DETAILS
4.6
2.0 min
(3x)
2.3
1.5 min
(3x)
6.8
2.0 min
3.8 min
© Zetex plc 2002
Americas
Asia Pacific
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
[email protected]
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
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