DIODES ZXMC3F31DN8TA

ZXMC3F31DN8
30V SO8 Complementary dual enhancement mode
MOSFET
Summary
Device
V(BR)DSS
(V)
QG
(nC)
RDS(on) (Ω)
ID (A)
Q1
30
12.9
0.024 @ VGS= 10V
7.3
0.039 @ VGS= 4.5V
5.7
0.045 @ VGS= -10V
5.3
0.080 @ VGS= -4.5V
4
Q2
-30
12.7
Description
This new generation Trench MOSFET from Zetex has been designed to
minimize the on-state resistance (RDS(on)) and yet maintain superior
switching performance making it ideal for power management and
battery charging functions.
Features
•
•
•
Low on-resistance
4.5V gate drive capability
Low profile SOIC package
D1
Applications
D2
G2
G1
•
DC-DC Converters
•
SMPS
•
Load switching switches
•
Motor control
•
Backlighting
S2
S1
Q1 N-Channel
Q2 P-Channel
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
500
ZXMC3F31DN8TA
S1
G1
Device marking
S2
ZXMC
3F31
G2
D1
N
D1
D2
P
D2
Top view
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ZXMC3F31DN8
Absolute maximum ratings
Parameter
Symbol
Nchannel
Q1
Pchannel
Q2
Unit
Drain-Source voltage
VDSS
30
-30
V
Gate-Source voltage
VGS
±20
±20
V
ID
A
Continuous Drain current @ VGS= 10V; TA=25°C
@ VGS= 10V; TA=70°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TL=25°C
Pulsed Drain current
(b)(d)
7.3
5.3
(b)(d)
5.9
4.3
(a)(d)
5.7
4.1
(a)(e)
6.8
4.9
7.8
5.7
IDM
33
23
A
IS
3.5
3.2
A
ISM
33
23
A
(f)(d)
(c)
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TL =25°C
Linear derating factor
(b)(d)
(c)(d)
(a)(d)
(a)(e)
(b)(d)
(f) (d)
Operating and storage temperature range
PD
1.25
10
W
mW/°C
PD
1.8
14
W
mW/°C
PD
2.1
17
W
mW/°C
PD
2.35
19
W
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Value
Unit
RθJA
100
°C/W
RθJA
70
°C/W
RθJA
60
°C/W
RθJL
53
°C/W
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
Junction to lead
(a)(d)
(a)(e)
(b)(d)
(f) (d)
NOTES:
(a)
(b)
(c)
(d)
(e)
(f)
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still
air conditions.
Mounted on FR4 PCB measured at t ≤ 10 sec.
Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
For a device with one active die.
For a device with two active die running at equal power.
Thermal resistance from junction to solder-point (at the end of the drain lead).
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Thermal characteristics
RDS(ON)
-ID Drain Current (A)
ID Drain Current (A)
RDS(ON)
10 Limited
DC
1
1s
100ms
100m
10m
1ms
100us
1
DC
1s
100ms
1
1ms
100us
PNP @ Single Pulse, T amb=25°C
0.1
10
10ms
Note (a)(d)
10m
NPN @ Single Pulse, Tamb=25°C
0.1
Limited
100m
10ms
Note (a)(d)
10
VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
80
60
D=0.5
40
Single Pulse
D=0.2
20
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
2.0
100
Pulse Width (s)
Two active die
One active die
1.0
0.5
0.0
0
25
50
75
100
125
150
Temperature (°C)
Transient Thermal Impedance
Maximum Power (W)
1.5
Derating Curve
Single Pulse
T amb=25°C
100
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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ZXMC3F31DN8
Q1 N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
30
Zero Gate voltage Drain
current
IDSS
Gate-Body leakage
IGSS
Gate-Source threshold
voltage
VGS(th)
Static Drain-Source
( )
on-state resistance *
RDS(on)
Forward
( ) (†)
Transconductance *
gfs
Input capacitance
Typ.
Max.
Unit
Conditions
V
ID = 250μA, VGS=0V
0.5
µA
VDS=30V, VGS=0V
100
nA
VGS=±20V, VDS=0V
3.0
V
ID= 250μA, VDS=VGS
0.024
0.039
Ω
VGS= 10V, ID= 7.0A
VGS= 4.5, ID= 6.0A
16.5
S
VDS= 15V, ID= 7.0A
Ciss
608
pF
Output capacitance
Coss
132
pF
Reverse transfer
capacitance
Crss
72
pF
Turn-on-delay time
td(on)
2.9
ns
Rise time
tr
3.3
ns
VDD= 15V, VGS=10V
Turn-off delay time
td(off)
16
ns
Fall time
tf
8
ns
ID= 1A
RG ≅ 6.0Ω,
Total Gate charge
Qg
12.9
nC
Gate-Source charge
Qgs
2.5
nC
Gate-Drain charge
Qgd
2.52
nC
*
VSD
0.82
(‡)
trr
12
ns
Qrr
4.8
nC
Dynamic
1.0
(†)
Switching
VDS= 15V, VGS=0V
f=1MHz
(‡) (†)
VDS= 15V, VGS= 10V
ID= 7A
Source–Drain diode
Diode forward voltage
( )
Reverse recovery time
Reverse recovery charge
(‡)
1.2
V
IS= 1.7A,VGS=0V
IS= 2.2A,di/dt=100A/μs
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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ZXMC3F31DN8
Q1 Typical characteristics
5V
ID Drain Current (A)
T = 150°C
4V
3.5V
3V
1
0.1
2.5V
VGS
T = 25°C
10V
VGS
4V
3.5V
10
ID Drain Current (A)
10V
10
3V
2.5V
1
2V
0.1
1.5V
0.01
0.01
0.1
1
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
ID Drain Current (A)
VDS = 10V
T = 150°C
1
T = 25°C
0.1
2
3
4
VGS Gate-Source Voltage (V)
1000
2.5V
VGS
T = 25°C
100
3V
10
3.5V
1
4V
0.1
0.01
0.01
4.5V
10V
0.1
1
10
On-Resistance v Drain Current
© Diodes Incorporated 2008
ID = 7A
RDS(on)
1.2
1.0
0.8
VGS(th)
VGS = VDS
0.6
0.4
-50
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
10
1
T = 150°C
0.1
T = 25°C
0.01
Vgs = -3V
1E-3
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ID Drain Current (A)
Issue 1 - September 2008
VGS = 10V
1.4
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (W)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
1.6
10
5
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Q1 Typical characteristics –cntd.
VGS = 0V
C Capacitance (pF)
800
f = 1MHz
700
600
500
CISS
COSS
400
CRSS
300
200
100
0
1
10
VGS Gate-Source Voltage (V)
900
10
9
8
7
6
5
4
3
2
1
0
ID = 7A
VDS = 15V
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Q - Charge (nC)
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test circuits
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ZXMC3F31DN8
Q2 P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
-30
Zero Gate voltage Drain
current
IDSS
Gate-Body leakage
IGSS
Gate-Source threshold
voltage
VGS(th)
Static Drain-Source
( )
on-state resistance *
RDS(on)
Forward
( ) (†)
Transconductance *
gfs
Input capacitance
Typ.
Max.
Unit
Conditions
V
ID = -250μA, VGS=0V
-5.0
µA
VDS=-30V, VGS=0V
-100
nA
VGS=±20V, VDS=0V
-3.0
V
ID= -250μA, VDS=VGS
0.045
0.080
Ω
VGS= -10V, ID= -5.0A
VGS= -4.5V, ID= -4.0A
14
S
VDS= -15V, ID= -5.0A
Ciss
670
pF
Output capacitance
Coss
126
pF
Reverse transfer
capacitance
Crss
70
pF
Turn-on-delay time
td(on)
1.9
ns
Rise time
tr
3
ns
VDD= -15V, VGS=-10V
Turn-off delay time
td(off)
30
ns
Fall time
tf
21
ns
ID= -1A
RG ≅ 6.0Ω,
Total Gate charge
Qg
12.7
nC
Gate-Source charge
Qgs
2
nC
Gate-Drain charge
Qgd
2.4
nC
*
VSD
-0.82
(‡)
trr
16.5
ns
Qrr
11.5
nC
Dynamic
-1.0
(†)
Switching
VDS= -15V, VGS=0V
f=1MHz
(‡) (†)
VDS= -15V, VGS= -10V
ID= -5A
Source–Drain diode
Diode forward voltage
( )
Reverse recovery time
Reverse recovery charge
(‡)
-1.2
V
IS= -2A,VGS=0V
IS= -2.1A,di/dt=100A/μs
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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Typical characteristics
-ID Drain Current (A)
4.5V
4V
10V
T = 150°C
-ID Drain Current (A)
10V
T = 25°C
10
3.5V
3V
1
2.5V
0.1
VGS
0.01
3V
2.5V
2V
1
VGS
1
10
0.1
-VDS Drain-Source Voltage (V)
1
Output Characteristics
T = 25°C
2.5
3.0
3.5
-VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance (Ω)
Typical Transfer Characteristics
2.5V
VGS
T = 25°C
10
3V
3.5V
1
4V
4.5V
0.1
10V
0.01
0.01
0.1
1
10
-ID Drain Current (A)
On-Resistance v Drain Current
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VGS = 10V
ID = 5A
1.4
RDS(on)
1.2
1.0
0.8
VGS = VDS
0.6
0.4
-50
ID = 250uA
0
50
VGS(th)
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
-ISD Reverse Drain Current (A)
-ID Drain Current (A)
T = 150°C
Normalised RDS(on) and VGS(th)
1.6
VDS = 10V
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
0.1
2.0
3.5V
10
0.1
0.1
10
4V
10
T = 150°C
1
0.1
T = 25°C
0.01
Vgs = 0V
1E-3
0.2
0.4
0.6
0.8
1.0
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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Typical characteristics
C Capacitance (pF)
VGS = 0V
800
600
f = 1MHz
CISS
COSS
CRSS
400
200
0
1
10
-VGS Gate-Source Voltage (V)
1000
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
10
9
8
7
6
5
4
3
2
1
0
ID = 5A
VDS = 15V
0
5
10
Q - Charge (nC)
15
Gate-Source Voltage v Gate Charge
Test circuits
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Package outline SO8
SO8 Package Information
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Min.
Max.
Min.
Max.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
U
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
1.27 BSC
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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Definitions
Product change
Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the
user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by
Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such
use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including
negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss
in the use of these circuit applications, under any circumstances.
Life support
Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
to the products or services concerned.
Terms and Conditions
All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office.
Quality of product
Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
Green compliance
Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding
regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the
use of hazardous substances and/or emissions.
All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE
and ELV directives.
Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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Corporate Headquarters
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Telefon: (49) 89 45 49 49 0
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[email protected]
Zetex Inc
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Hauppauge, NY 11788
USA
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Hing Fong Road, Kwai Fong
Hong Kong
Diodes Incorporated
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Suite 850, Dallas
TX75248, USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
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© 2008 Published by Diodes Incorporated
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