ZXMN6A09G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 60V; RDS(ON)= 0.045 ID= 5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC Converters • Power Management Functions • Relay and Solenoid driving • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN6A09GTA 7” 12mm 1000 units ZXMN6A09GTC 13” 12mm 4000 units DEVICE MARKING • ZXMN 6A09 Top View PROVISIONAL ISSUE D - SEPTEMBER 2003 1 SEMICONDUCTORS ZXMN6A09G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS LIMIT 60 UNIT V Gate Source Voltage V GS ⫾20 V Continuous Drain Current (V GS =10V; T A =25°C) (b) (V GS =10V; T A =70°C) (b) (V GS =10V; T A =25°C) (a) ID 6.9 5.6 5.0 A Pulsed Drain Current (c) I DM 30.6 A Continuous Source Current (Body Diode) (b) IS 3.5 A Pulsed Source Current (Body Diode) (c) I SM 30.6 A Power Dissipation at T A =25°C (a)(d) Linear Derating Factor PD 2.0 16 W mW/°C Power Dissipation at T A =25°C (b)(d) Linear Derating Factor PD 3.9 31 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(d) R θJA 62.5 °C/W Junction to Ambient (b)(d) R θJA 32.2 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. PROVISIONAL ISSUE D - SEPTEMBER 2003 SEMICONDUCTORS 2 ZXMN6A09G CHARACTERISTICS PROVISIONAL ISSUE D - SEPTEMBER 2003 3 SEMICONDUCTORS ZXMN6A09G ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 60 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs Input Capacitance V I D =250µA, V GS =0V 1 µA V DS =60V, V GS =0V 100 nA V GS =±20V, V DS =0V V I =250µA, VDS= VGS D Ω Ω V GS =10V, I D =8.2A V GS =4.5V, I D =7.4A 15 S V DS =15V,I D =8.2A C iss 1407 pF Output Capacitance C oss 121 pF Reverse Transfer Capacitance C rss 59 pF Turn-On Delay Time t d(on) 4.9 ns Rise Time tr 5.0 ns Turn-Off Delay Time t d(off) 25.3 ns Fall Time tf 4.6 ns Gate Charge Qg 12.4 nC Total Gate Charge Qg 24.2 nC Gate-Source Charge Q gs 5.2 nC Gate-Drain Charge Q gd 3.5 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr 1.0 0.045 0.070 DYNAMIC (3) V DS =40 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =15V, I D =3.5A R G ≅6.0Ω, V GS =10V (refer to test circuit) V DS =15V,V GS =5V, I D =3.5A V DS =15V,V GS =10V, I D =3.5A SOURCE-DRAIN DIODE 0.95 V T J =25°C, I S =6.6A, V GS =0V 26.3 ns T J =25°C, I F =3.5A, di/dt= 100A/µs 26.6 nC NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE D - SEPTEMBER 2003 SEMICONDUCTORS 4 ZXMN6A09G TYPICAL CHARACTERISTICS PROVISIONAL ISSUE D - SEPTEMBER 2003 5 SEMICONDUCTORS ZXMN6A09G PROVISIONAL ISSUE D - SEPTEMBER 2003 SEMICONDUCTORS 6 ZXMN6A09G PACKAGE OUTLINE PAD LAYOUT DETAILS 4.6 2.0 min (3x) 2.3 1.5 min (3x) 6.8 2.0 min 3.8 min PACKAGE DIMENSIONS MILLIMETRES DIM MILLIMETRES DIM MIN MAX ᎏ 1.80 D A1 0.02 0.10 e 2.30 BASIC A2 1.55 1.65 e1 4.60 BASIC b 0.66 0.84 E 6.70 7.30 b2 2.90 3.10 E1 3.30 3.70 C 0.23 0.33 L 0.90 ᎏ A MIN MAX 6.30 6.70 © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE D - SEPTEMBER 2003 7 SEMICONDUCTORS