DIODES ZXMP10A18GTC

ZXMP10A18G
100V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = - 100V : RDS(on) = 0.150
; ID = - 3.7A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
SOT223
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT223 package
APPLICATIONS
• DC-DC Converters
• Power Management functions
• Relay and Solenoid driving
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP10A18GTA
7”
12mm
1,000 units
ZXMP10A18GTC
13”
12mm
4,000 units
PINOUT
DEVICE MARKING
• ZXMP
10A18
ISSUE 1 - MARCH 2005
1
SEMICONDUCTORS
ZXMP10A18G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Drain-Source Voltage
V DSS
-100
Gate-Source Voltage
V GS
±20
V
Continuous Drain Current @ VGS=10V; TA=25°C (b)
@V GS=10V; TA=70°C (b)
ID
-3.7
A
-3.0
A
-2.6
A
@ V GS=10V; TA=25°C (a)
(c)
I DM
-16.5
A
Continuous Source Current (Body Diode) (b)
IS
-5.3
A
Pulsed Source Current (Body Diode) (c)
I SM
-16.5
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
2
W
16
mW/°C
(b)
PD
Pulsed Drain Current
Power Dissipation at T A =25°C
Linear Derating Factor
T j , T stg
Operating and Storage Temperature Range
3.9
W
31
mW/°C
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
R ⍜JA
62.5
°C/W
Junction to Ambient (b)
R ⍜JA
32.2
°C/W
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02 pulse width = 300␮s - pulse width limited by maximum junction temperature.
ISSUE 1 - MARCH 2005
SEMICONDUCTORS
2
ZXMP10A18G
CHARACTERISTICS
ISSUE 1 - MARCH 2005
3
SEMICONDUCTORS
ZXMP10A18G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
-100
TYP.
MAX. UNIT CONDITIONS
STATIC
V
I D = -250␮A, V GS =0V
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
-1
␮A
V DS = -100V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =±20V, V DS =0V
I D = -250␮A, V DS =V GS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
R DS(on)
-2.0
-4.0
V
0.150
⍀
0.190
⍀
V GS = -10V, I D = -2.8A
V GS = -6V, I D = -2.4A
g fs
6.0
S
V DS = -15V, I D = -2.8A
Input Capacitance
C iss
1055
pF
Output Capacitance
C oss
90
pF
C rss
76
pF
(1)
Resistance
Forward Transconductance (1)(3)
DYNAMIC (3)
Reverse Transfer Capacitance
V DS = -50V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
4.6
ns
Rise Time
tr
6.8
ns
Turn-Off Delay Time
t d(off)
33.9
ns
Fall Time
tf
17.9
ns
Total Gate Charge
Qg
26.9
nC
Gate-Source Charge
Q gs
3.9
nC
Gate-Drain Charge
Q gd
10.2
nC
Diode Forward Voltage (1)
V SD
-0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
V DD = -50V, I D = -1A
R G = 6.0⍀, V GS = -10V
V DS = -50V, V GS = -10V
I D = -2.8A
SOURCE-DRAIN DIODE
-0.95
V
T j =25°C, I S = -3.5A,
49
ns
107
nC
T j =25°C, I S = -2.8A,
di/dt=100A/␮s
V GS =0V
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300ms; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2005
SEMICONDUCTORS
4
ZXMP10A18G
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2005
5
SEMICONDUCTORS
ZXMP10A18G
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2005
SEMICONDUCTORS
6
ZXMP10A18G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
A
Millimetres
Inches
Millimetres
DIM
Min
Max
Min
Max
6.3
6.7
0.248
0.264
G
Min
Max
NOM 4.6
Inches
Min
Max
NOM 0.181
B
3.3
3.7
0.130
0.146
H
0.85
1.05
0.033
0.041
C
-
1.7
-
0.067
K
0.02
0.10
0.0008
0.004
6.7
7.3
0.264
0.287
D
0.6
0.8
0.024
0.031
L
E
2.9
3.1
0.114
0.122
M
F
0.24
0.32
0.009
0.13
NOM 2.3
NOM 0.0905
© Zetex Semiconductors plc 2005
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - MARCH 2005
7
SEMICONDUCTORS