ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V : RDS(on) = 0.150 ; ID = - 3.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT223 package APPLICATIONS • DC-DC Converters • Power Management functions • Relay and Solenoid driving • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP10A18GTA 7” 12mm 1,000 units ZXMP10A18GTC 13” 12mm 4,000 units PINOUT DEVICE MARKING • ZXMP 10A18 ISSUE 1 - MARCH 2005 1 SEMICONDUCTORS ZXMP10A18G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Drain-Source Voltage V DSS -100 Gate-Source Voltage V GS ±20 V Continuous Drain Current @ VGS=10V; TA=25°C (b) @V GS=10V; TA=70°C (b) ID -3.7 A -3.0 A -2.6 A @ V GS=10V; TA=25°C (a) (c) I DM -16.5 A Continuous Source Current (Body Diode) (b) IS -5.3 A Pulsed Source Current (Body Diode) (c) I SM -16.5 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 2 W 16 mW/°C (b) PD Pulsed Drain Current Power Dissipation at T A =25°C Linear Derating Factor T j , T stg Operating and Storage Temperature Range 3.9 W 31 mW/°C -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL (a) R ⍜JA 62.5 °C/W Junction to Ambient (b) R ⍜JA 32.2 °C/W Junction to Ambient NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02 pulse width = 300s - pulse width limited by maximum junction temperature. ISSUE 1 - MARCH 2005 SEMICONDUCTORS 2 ZXMP10A18G CHARACTERISTICS ISSUE 1 - MARCH 2005 3 SEMICONDUCTORS ZXMP10A18G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. -100 TYP. MAX. UNIT CONDITIONS STATIC V I D = -250A, V GS =0V Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS -1 A V DS = -100V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =±20V, V DS =0V I D = -250A, V DS =V GS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State R DS(on) -2.0 -4.0 V 0.150 ⍀ 0.190 ⍀ V GS = -10V, I D = -2.8A V GS = -6V, I D = -2.4A g fs 6.0 S V DS = -15V, I D = -2.8A Input Capacitance C iss 1055 pF Output Capacitance C oss 90 pF C rss 76 pF (1) Resistance Forward Transconductance (1)(3) DYNAMIC (3) Reverse Transfer Capacitance V DS = -50V, V GS =0V f=1MHz SWITCHING (2) (3) Turn-On Delay Time t d(on) 4.6 ns Rise Time tr 6.8 ns Turn-Off Delay Time t d(off) 33.9 ns Fall Time tf 17.9 ns Total Gate Charge Qg 26.9 nC Gate-Source Charge Q gs 3.9 nC Gate-Drain Charge Q gd 10.2 nC Diode Forward Voltage (1) V SD -0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DD = -50V, I D = -1A R G = 6.0⍀, V GS = -10V V DS = -50V, V GS = -10V I D = -2.8A SOURCE-DRAIN DIODE -0.95 V T j =25°C, I S = -3.5A, 49 ns 107 nC T j =25°C, I S = -2.8A, di/dt=100A/s V GS =0V NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300ms; duty cycle ⱕ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - MARCH 2005 SEMICONDUCTORS 4 ZXMP10A18G TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2005 5 SEMICONDUCTORS ZXMP10A18G TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2005 SEMICONDUCTORS 6 ZXMP10A18G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM A Millimetres Inches Millimetres DIM Min Max Min Max 6.3 6.7 0.248 0.264 G Min Max NOM 4.6 Inches Min Max NOM 0.181 B 3.3 3.7 0.130 0.146 H 0.85 1.05 0.033 0.041 C - 1.7 - 0.067 K 0.02 0.10 0.0008 0.004 6.7 7.3 0.264 0.287 D 0.6 0.8 0.024 0.031 L E 2.9 3.1 0.114 0.122 M F 0.24 0.32 0.009 0.13 NOM 2.3 NOM 0.0905 © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - MARCH 2005 7 SEMICONDUCTORS