A Product Line of Diodes Incorporated ZXMS6006DT8 ADVANCE INFORMATION 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • • Nominal load current (VIN = 5V) Clamping Energy 2.8A 210mJ • • • • • • • • • • • • Description and Applications The ZXMS6006DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6006DT8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Compact high power dissipation package Low input current Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input Protection (ESD) High continuous current rating Green, RoHS Compliant (Note 1) Halogen and Antimony Free. (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Lamp Driver • Motor Driver • Relay Driver • Solenoid Driver • • • • • Case: SM-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.117 grams (approximate) SM-8 1 D1 IN1 D2 IN2 S1 Top View S2 IN1 D1 S1 D1 IN2 D2 S2 D2 Top view Pin-Out Device symbol Ordering Information (Note 3) Product ZXMS6006DT8TA Notes: Marking ZXMS6006D Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. Contain <900ppm bromine, chlorine (<1500ppm total) and <1000ppm antimony compounds. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information Pin 1 ZXMS 6006D ZXMS6006D = Product Type Marking Code Top View IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 1 of 9 December 2010 ZXMS6006DT8 Document number: DS35143 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMS6006DT8 Functional Block Diagram IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 2 of 9 December 2010 ZXMS6006DT8 Document number: DS35143 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMS6006DT8 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Continuous Drain-Source Voltage Drain-Source Voltage For Short Circuit Protection Continuous Input Voltage Continuous Input Current @-0.2V ≤ VIN ≤ 6V Continuous Input Current @VIN < -0.2V or VIN > 6V Pulsed Drain Current @VIN = 3.3V ( Note 6) Pulsed Drain Current @VIN = 5V ( Note 6) Continuous Source Current (Body Diode) (Note 4) Pulsed Source Current (Body Diode) Unclamped Single Pulse Inductive Energy, TJ = 25°C, ID = 0.5A, VDD = 24V Electrostatic Discharge (Human Body Model) Charged Device Model Symbol VDS VDS(SC) VIN Units V V V IDM IDM IS ISM Value 60 16 -0.5 ... +6 No limit │IIN │≤2 11 13 2 12 EAS 210 mJ VESD VCDM 4000 1000 V V IIN mA A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation at TA = 25°C (Notes 4 & 7) Linear Derating Factor Power Dissipation at TA = 25°C (Notes 4 & 8) Linear Derating Factor Power Dissipation at TA = 25°C (Notes 5 & 7) Linear Derating Factor Thermal Resistance, Junction to Ambient (Notes 4 & 7) Thermal Resistance, Junction to Ambient (Notes 4 & 8) Thermal Resistance, Junction to Case (Notes 5 & 7) Thermal Resistance, Junction to Case (Note 9) Operating Temperature Range Storage Temperature Range Notes: Symbol PD PD PD RθJA RθJA RθJC RθJC TJ TSTG Value 1.16 9.28 1.67 13.3 2.13 17 108 75 58.7 26.5 -40 to +150 -55 to +150 Units W mW/°C W mW/°C W mW/°C °C/W °C/W °C/W °C/W °C °C 4. For a dual device surface mounted on a 25mm x 25mm single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air conditions. 5. For a dual device surface mounted on FR4 PCB measured at t≤ 10sec 6. Repetitive rating25mm x 25mm FR4 PCB, D = 0.02, Pulse width = 300µs – pulse width limited by junction temperature. Refer to transient thermal impedance graph. 7. For a dual device with one active die. 8. For a dual device with 2 active die running at equal power. 9. Thermal resistance from junction to the mounting surface of the drain pin. IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 3 of 9 December 2010 ZXMS6006DT8 Document number: DS35143 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated Recommended Operating Conditions The ZXMS6006DT8 is optimized for use with µC operating from 3.3V and 5V supplies. Characteristic Input Voltage Range Ambient Temperature Range High Level Input Voltage for MOSFET to be on Low Level Input Voltage for MOSFET to be off Peripheral Supply Voltage (voltage to which load is referred) Symbol VIN TA VIH VIL VP Min 0 -40 3 0 0 Max 5.5 125 5.5 0.7 16 Unit V °C V V V Limited 10 by RDS(on) Limited by Over-Current Protection 1ms 1 DC 1s Single Pulse Tamb=25°C 100ms 100m 10m 25X25X1.6mm FR4 10ms Single 1oz Cu One active die Limit of s/c protection 1 10 Max Power Dissipation (W) ID Drain Current (A) Thermal Characteristics 1.6 1.4 2 active die 1.2 1.0 0.8 0.6 0.4 1 active die 0.2 0.0 0 25 VDS Drain-Source Voltage (V) 100 80 25X25X1.6mm FR4 Single 1oz Cu One active die Tamb=25°C D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 D=0.1 0 100µ 1m 10m 100m 1 10 75 100 125 150 Derating Curve Maximum Power (W) 120 50 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION ZXMS6006DT8 100 1k 25X25X1.6mm FR4 Single 1oz Cu One active die Single Pulse T amb=25°C 100 10 1 100µ Pulse Width (s) 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 4 of 9 December 2010 ZXMS6006DT8 Document number: DS35143 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMS6006DT8 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Static Characteristics Drain-Source Clamp Voltage Symbol Min Typ Max Unit VDS(AZ) 60 0.7 2.0 2.2 2.6 2.8 4 6 65 1 60 120 85 75 8 13 70 1 2 1.5 100 200 400 125 100 - V td(on) tr td(off) ff - 8.6 18 34 15 - μs μs μs μs TJT ff 150 - 175 10 - °C °C Off State Drain Current IDSS Input Threshold Voltage VIN(th) Input Current IIN Input Current while Over Temperature Active Static Drain-Source On-State Resistance RDS(on) Continuous Drain Current (Notes 4 & 8) ID Continuous Drain Current (Notes 4 & 7) Current Limit (Note 10) Dynamic Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Over-Temperature Protection Thermal Overload Trip Temperature (Note 11) Thermal Hysteresis (Note 11) Notes: ID(LIM) µA V μA μA mΩ A A Test Condition ID = 10mA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 1A VIN = +5V, ID = 1A VIN = 3V; TA = 25°C VIN = 5V; TA = 25°C VIN = 3V; TA = 25°C VIN = 5V; TA = 25°C VIN = +3V VIN = +5V VDD = 12V, ID = 1A, VGS = 5V - 10. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 11. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods.. IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 5 of 9 December 2010 ZXMS6006DT8 Document number: DS35143 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics VIN 14 120 8 5V 4.5V 4V 3.5V 3V3V 6 2.5V 12 10 4 2V 2 T A = 25°C IIN Input Current (μA) ID Drain Current (A) 16 0 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 3 4 5 Input Current vs Input Voltage Typical Output Characteristic 1.4 0.20 ID = 1A 0.15 T J = 150°C 0.10 0.05 T J = 25°C 0.00 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTH Threshold Voltage (V) RDS(on) On-Resistance (Ω) 2 VIN Input Voltage (V) VDS Drain-Source Voltage (V) ID = 1mA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ Junction Temperature (°C) On-Resistance vs Input Voltage Threshold Voltage vs Temperature 0.20 IS Source Curent (A) 10 0.15 VIN = 3V 0.10 VIN = 5V 0.05 0.00 VIN = VDS 1.3 VIN Input Voltage (V) RDS(on) On-Resistance (Ω) ADVANCE INFORMATION ZXMS6006DT8 -50 -25 0 25 50 75 100 125 150 T J=150°C 1 T J=25°C 0.1 0.01 TJ Junction Temperature (°C) On-Resistance vs Temperature 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Reverse Diode Characteristic IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 6 of 9 December 2010 ZXMS6006DT8 Document number: DS35143 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated Drain-Source Voltage (V) Drain-Source Voltage (V) Typical Characteristics - Continued 12 ID=1A 10 VDS 8 6 VIN 4 2 0 -50 0 50 100 150 200 250 300 12 ID=1A VDS 10 8 6 4 VIN 2 0 -50 0 50 100 150 200 250 300 Time (μs) Time (μs) Switching Speed Switching Speed ID Drain Current (A) ADVANCE INFORMATION ZXMS6006DT8 VIN = 5V 8 VDS = 15V RD = 0Ω 6 4 2 0 0 5 10 15 Time (ms) Typical Short Circuit Protection IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 7 of 9 December 2010 ZXMS6006DT8 Document number: DS35143 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMS6006DT8 Package Outline Dimensions DIM A A1 b c D E Millimeters Min Max Typ. 1.7 0.02 0.1 0.7 0.24 0.32 6.3 6.7 3.3 3.7 - Min 0.008 0.009 0.248 0.130 Inches Max Typ. 0.067 0.004 0.0275 0.013 0.264 0.145 - DIM e1 e2 He Lp α β Min 6.7 0.9 - Millimeters Max Typ. 4.59 1.53 7.3 15° 10° Min 0.264 0.035 - Inches Max Typ. 0.1807 0.0602 0.287 15° 10° Suggested Pad Layout 2.8 0.110 6.8 0.268 4.6 0.181 mm inches 0.95 0.037 1.52 0.060 IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 8 of 9 December 2010 ZXMS6006DT8 Document number: DS35143 Rev. 1 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMS6006DT8 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 9 of 9 December 2010 ZXMS6006DT8 Document number: DS35143 Rev. 1 - 2 www.diodes.com © Diodes Incorporated