A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 50V • RSAT = 68 mΩ • IC = 4A PNP Transistor • VCEO = -40V • RSAT = 104 mΩ • IC = -3A IC = 4A Continuous Collector Current Low Saturation Voltage (100mV max @ 1A -- NPN) hFE characterized up to 6A Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1) “Green” Devices (Note 2) Case: DFN3020B-8 Terminals: Pre-Plated NiPdAu leadframe Nominal package height: 0.8mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (approximate) Applications • • • • • DC – DC Converters Charging circuits Power switches Motor control CCFL Backlighting circuits DFN3020B-8 Device Symbol Top View Pin Configuration Ordering Information Product ZXTC6719MCTA Notes: Status Active Marking DC3 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information DC3 = Product type Marking Code Dot denotes Pin 1 ZXTC6719MC Document number: DS31928 Rev. 2 - 2 1 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6719MC Maximum Ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (a) (f) Base Current Symbol VCBO VCEO VEBO ICM IC IB NPN 100 50 7.5 6 4 PNP -50 -40 -7.5 -4 -3 1 Unit V V V A A A Thermal Characteristics Characteristic Power Dissipation at TA = 25°C (a) (f) Linear Derating Factor Power Dissipation at TA = 25°C (b) (f) Linear Derating Factor Power Dissipation at TA = 25°C (c) (f) Linear Derating Factor Power Dissipation at TA = 25°C (d) (f) Linear Derating Factor Power Dissipation at TA = 25°C (d) (g) Linear Derating Factor Power Dissipation at TA = 25°C (e) (g) Linear Derating Factor Junction to Ambient (a) (f) Junction to Ambient (b) (f) Junction to Ambient (c) (f) Junction to Ambient (d) (f) Junction to Ambient (d) (g) Junction to Ambient (e) (g) Operating and Storage Temperature Range Notes: Symbol PD PD PD PD PD PD RθJA RθJA RθJA RθJA RθJA RθJA TJ, TSTG Value 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 83.3 51 125 111 73.5 41.7 -55 to +150 Unit W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C °C/W °C/W °C/W °C/W °C/W °C/W °C a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only. d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. f. For a dual device with one active die. g. For dual device with 2 active die running at equal power. ZXTC6719MC Document number: DS31928 Rev. 2 - 2 2 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6719MC Thermal Characteristics and Derating information ZXTC6719MC Document number: DS31928 Rev. 2 - 2 3 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6719MC Electrical Characteristics, NPN Transistor (at TA = 25°C unless otherwise specified) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES Min 100 50 7.5 - Typ 190 65 8.2 - Max 25 25 25 Unit V V V nA nA nA hFE 200 300 200 100 - 400 450 400 225 40 - - Collector-Emitter Saturation Voltage (Note 3) VCE(sat) - 10 70 145 115 225 270 20 100 200 220 300 320 mV Base-Emitter Turn-On Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Output Capacitance VBE(on) VBE(sat) Cobo - 0.94 1.00 12 1.00 1.05 20 V V pF Transition Frequency fT 100 165 - MHz Turn-on Time ton - 170 - ns VCC = 10V, IC = 1A Turn-off Time toff - 750 - ns IB1 = IB2 = 10mA Static Forward Current Transfer Ratio (Note 3) Notes: Test Condition IC = 100µA IC = 10mA IE = 100µA VCB = 80V VEB = 6V VCES = 40V IC = 10mA, VCE = 2V IC = 200mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V IC = 6A, VCE = 2V IC = 0.1A, IB = 10mA IC = 1A, IB = 5mA IC = 1A, IB = 10mA IC = 2A, IB = 50mA IC = 3A, IB = 100mA IC = 4A, IB = 200mA IC = 4A, VCE = 2V IC = 4A, IB = 200mA VCB = 10V. f = 1MHz VCE = 10V, IC = 50mA, f = 100MHz 3. Measured under pulsed conditions. ZXTC6719MC Document number: DS31928 Rev. 2 - 2 4 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6719MC NPN Characteristics ZXTC6719MC Document number: DS31928 Rev. 2 - 2 5 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6719MC Electrical Characteristics, PNP Transistor @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES Min -50 -40 -7.5 - Typ -80 -70 -8.5 - Max -25 -25 -25 Unit V V V nA nA nA hFE 300 300 180 60 12 480 450 290 130 22 - - Collector-Emitter Saturation Voltage (Note 4) VCE(sat) - -25 -150 -195 -210 -260 -40 -220 -300 -300 -370 mV Base-Emitter Turn-On Voltage (Note 4) Base-Emitter Saturation Voltage (Note 4) Output Capacitance VBE(on) VBE(sat) Cobo - -0.89 -0.97 19 -0.95 -1.05 25 V V pF Static Forward Current Transfer Ratio (Note 4) Transition Frequency Test Condition IC = -100µA IC = -10mA IE = -100µA VCB = -40V VEB = -6V VCES = -32V IC = -10mA, VCE = -2V IC = -100mA, VCE = -2V IC = -1A, VCE = -2V IC = -1.5A, VCE = -2V IC = -3A, VCE = -2V IC = -0.1A, IB = -10mA IC = -1A, IB = -50mA IC = -1.5A, IB = -100mA IC = -2A, IB = -200mA IC = -2.5A, IB = -250mA IC = -2.5A, VCE = -2V IC = -2.5A, IB = -250mA VCB = -10V. f = 1MHz VCE = -10V, IC = -50mA, f = 100MHz fT 150 190 - MHz Turn-on Time ton - 40 - ns VCC = -15V, IC = -0.75A Turn-off Time toff - 435 - ns IB1 = IB2 = -10mA Notes: 4. Measured under pulsed conditions. ZXTC6719MC Document number: DS31928 Rev. 2 - 2 6 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6719MC PNP Characteristics ZXTC6719MC Document number: DS31928 Rev. 2 - 2 7 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6719MC Package Outline Dimensions A DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 A1 D D4 D4 D2 E E2 b Z e L Suggested Pad Layout C X Y1 G1 G Y2 Y X1 ZXTC6719MC Document number: DS31928 Rev. 2 - 2 Dimensions C G G1 X X1 Y Y1 Y2 8 of 9 www.diodes.com Value (in mm) 0.650 0.285 0.090 0.400 1.120 0.730 0.500 0.365 January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6719MC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com ZXTC6719MC Document number: DS31928 Rev. 2 - 2 9 of 9 www.diodes.com January 2010 © Diodes Incorporated