DIODES ZXTN26020DMF

A Product Line of
Diodes Incorporated
ZXTN26020DMF
H IGH GA IN , L OW V C E ( S A T ) N P N B I PO LAR TR ANSI S TOR
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
•
High Gain Low Vcesat NPN transistor
Very Low Rcesat
High ICM capability
1.5A Continuous Current Rating
Ultra-Small Surface mount Package
Qualified to AEC-Q101 Standards for High Reliability
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
“Green” Device (Note 2)
ESD rating: 400V-MM, 8KV-HBM
Case: DFN1411-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper lead frame. Solderable
per MIL-STD-202, Method 208
Weight: 0.003 grams (approximate)
•
•
•
Applications
•
•
•
•
Top view
Bottom view
MOSFET and IGBT gate driving
DC-DC conversion
Interface between low voltage IC and Load
LED driving
Pin-out Top view
Device Symbol
Ordering Information
Product
ZXTN26020DMFTA
Notes:
Status
Active
Marking
Z1
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
Z1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Z1
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
2010
X
Feb
2
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
Mar
3
2011
Y
Apr
4
May
5
2012
Z
Jun
6
1 of 6
www.diodes.com
2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
September 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN26020DMF
Maximum Ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 4)
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
20
20
7
1.5
4
0.5
Unit
V
V
V
A
A
A
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
1
380
125
330
-55 to +150
Unit
W
mW
°C/W
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes:
3. Device mounted on FR-4 PCB with 1inch square pads.
4. Device mounted on FR-4 PCB with minimum recommended pad layout
1.2
P(pk), PEAK TRANSIENT POWER (W)
1,000
PD, POWER DISSIPATION (W)
1.0
Note 3
0.8
0.6
0.4
Note 4
0.2
Single Pulse
RθJA(t) = r(t) * RθJA
RθJA = 328°C/W
100
T J - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
10
1
0.1
0.00001
0
0
20
40
60
80 100 120 140 160
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
0.001
0.1
10
1,000
t1, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 328°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
T J - T A = P * RθJA(t)
Duty Cycle, D = t1 /t2
D = Single Pulse
0.001
0.00001
0.0001
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
2 of 6
www.diodes.com
10
100
1,000
September 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN26020DMF
Electrical Characteristics (at TA = 25°C unless otherwise specified)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
V(BR)ECO
Min
20
20
7
5
Typ
⎯
⎯
⎯
⎯
Collector Cutoff Current
Icbo
⎯
⎯
Emitter Cutoff Current
Base Cutoff Current
Ices
Iebo
⎯
⎯
DC Current Gain (Note 5)
hFE
300
290
270
200
⎯
⎯
⎯
⎯
⎯
⎯
100
100
1000
⎯
⎯
⎯
Collector-Emitter Saturation Voltage (Note 5)
VCE(SAT)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
45
70
125
225
225
290
Equivalent On-Resistance
Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
Output Capacitance (Note 5)
Input Capacitance (Note 5)
RCE(SAT)
VBE(ON)
VBE(SAT)
Cobo
Cibo
⎯
⎯
⎯
⎯
—
90
⎯
⎯
⎯
⎯
⎯
1.2
1.1
20
150
mV
mV
mV
mV
mV
mV
mΩ
V
V
pF
pF
Current Gain-Bandwidth Product
fT
⎯
260
⎯
MHz
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
ton
td
tr
toff
ts
tf
⎯
⎯
⎯
⎯
⎯
⎯
60
20
40
225
205
20
⎯
⎯
⎯
⎯
⎯
⎯
ns
ns
ns
ns
ns
ns
Notes:
Max
⎯
⎯
⎯
⎯
100
0.5
Unit
V
V
V
V
nA
μA
nA
nA
⎯
Test Condition
IC = 100μA, IE = 0A
IC = 10mA, IB = 0A
IE = 100μA, IC = 0A
IE = 100μA, IB = 0A
VCB = 20V, IE = 0A
VCB = 20V, IE = 0, TA = 125°C
VCE = 20V, VBE = 0V
VBE = 5.6V, IC = 0A
VCE = 2V, IC = 100mA
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A
VCE = 2V, IC = 2A
IC = 100mA, IB = 1mA
IC = 500mA, IB = 25mA
IC = 1A, IB = 50mA
IC = 1.5A, IB = 30mA
IC = 2A, IB = 100mA
IC = 2A, IB = 40mA
IC = 1A, IB = 50mA
VCE = 2V, IC = 2A
IC = 2A, IB = 100mA
VCB = 10V, f = 1.0MHz
VEB = 0.5V, f = 1.0MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 1A
IB2 = -IB1 = 50mA
5. Short duration pulse test used to minimize self-heating effect.
1,200
2.8
1,100
T A = 150°C
1,000
IB = 5mA
2.0
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
2.4
IB = 4mA
1.6
IB = 3mA
1.2
IB = 2mA
0.8
IB = 1mA
900
TA = 125°C
800
T A = 85°C
700
T A = 25°C
600
500
400
T A = -55°C
300
200
0.4
100
0
0
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
3 of 6
www.diodes.com
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
September 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN26020DMF
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 20
0.1
TA = 85°C
TA = 150°C
TA = 25°C
T A = 125°C
0.01
1.0
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1
TA = -55°C
0.001
0.1
VCE = 5V
0.8
TA = -55°C
0.6
TA = 25°C
0.4
T A = 85°C
TA = 150°C
0
0.1
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
1.2
f = 1MHz
IC/IB = 10
1.0
CAPACITANCE (pF)
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.8
TA = -55°C
0.6
TA = 25°C
T A = 85°C
0.4
T A = 125°C
100
Cibo
Cobo
10
T A = 150°C
0.2
1
0
0.1
1
10
100
1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
500
0
5
10
15
20
25
30
35
VR, REVERSE VOLTAGE (V)
Fig. 9 Typical Capacitance Characteristics
40
100
ICBO, COLLECTOR CUTOFF CURRENT (nA)
fT, GAIN-BANDWIDTH PRODUCT (MHz)
TA = 125°C
0.2
VCE = 10V
400
300
200
100
VCBE = 20V
IC = 0
10
0
0
5
10 15 20 25 30 35 40 45 50
IC, COLLECTOR CURRENT (mA)
Fig. 10 Typical Gain-Bandwidth Product vs. Collector Current
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
1
-50
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 11 Collector Cutoff Current vs. Ambient Temperature
4 of 6
www.diodes.com
-25
September 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN26020DMF
Package Outline Dimensions
A
DFN1411-3
Dim Min Max Typ
A
0.47 0.53 0.50
A1
0
0.05 0.02
b
0.25 0.35 0.30
D
1.35 1.475 1.40
D2 0.65 0.85 0.75
E
1.05 1.18 1.10
e
⎯
⎯ 0.55
L 0.225 0.325 0.275
L1
⎯
⎯ 0.20
All Dimensions in mm
A1
Suggested Pad Layout
C
X2
X1
G2 X
Y
G1
Dimensions
Z
G1
G2
X
X1
X2
Y
C
Value (in mm)
1.38
0.15
0.15
0.95
0.75
0.40
0.75
0.76
Z
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
5 of 6
www.diodes.com
September 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN26020DMF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
6 of 6
www.diodes.com
September 2009
© Diodes Incorporated