A Product Line of Diodes Incorporated ZXTN26020DMF H IGH GA IN , L OW V C E ( S A T ) N P N B I PO LAR TR ANSI S TOR Features Mechanical Data • • • • • • • • • • • High Gain Low Vcesat NPN transistor Very Low Rcesat High ICM capability 1.5A Continuous Current Rating Ultra-Small Surface mount Package Qualified to AEC-Q101 Standards for High Reliability Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) “Green” Device (Note 2) ESD rating: 400V-MM, 8KV-HBM Case: DFN1411-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.003 grams (approximate) • • • Applications • • • • Top view Bottom view MOSFET and IGBT gate driving DC-DC conversion Interface between low voltage IC and Load LED driving Pin-out Top view Device Symbol Ordering Information Product ZXTN26020DMFTA Notes: Status Active Marking Z1 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information Z1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) Z1 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 ZXTN26020DMF Documnt Number: DS31953 Rev. 2 - 1 Mar 3 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D September 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN26020DMF Maximum Ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current (Note 4) Peak Pulse Current Base Current Symbol VCBO VCEO VEBO IC ICM IB Value 20 20 7 1.5 4 0.5 Unit V V V A A A Symbol PD PD RθJA RθJA TJ, TSTG Value 1 380 125 330 -55 to +150 Unit W mW °C/W °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Operating and Storage Temperature Range Notes: 3. Device mounted on FR-4 PCB with 1inch square pads. 4. Device mounted on FR-4 PCB with minimum recommended pad layout 1.2 P(pk), PEAK TRANSIENT POWER (W) 1,000 PD, POWER DISSIPATION (W) 1.0 Note 3 0.8 0.6 0.4 Note 4 0.2 Single Pulse RθJA(t) = r(t) * RθJA RθJA = 328°C/W 100 T J - TA = P * RθJA(t) Duty Cycle, D = t1/t2 10 1 0.1 0.00001 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 328°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1 /t2 D = Single Pulse 0.001 0.00001 0.0001 ZXTN26020DMF Documnt Number: DS31953 Rev. 2 - 1 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 3 Transient Thermal Response 2 of 6 www.diodes.com 10 100 1,000 September 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN26020DMF Electrical Characteristics (at TA = 25°C unless otherwise specified) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO V(BR)ECO Min 20 20 7 5 Typ ⎯ ⎯ ⎯ ⎯ Collector Cutoff Current Icbo ⎯ ⎯ Emitter Cutoff Current Base Cutoff Current Ices Iebo ⎯ ⎯ DC Current Gain (Note 5) hFE 300 290 270 200 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 100 1000 ⎯ ⎯ ⎯ Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 45 70 125 225 225 290 Equivalent On-Resistance Base-Emitter Turn-On Voltage Base-Emitter Saturation Voltage Output Capacitance (Note 5) Input Capacitance (Note 5) RCE(SAT) VBE(ON) VBE(SAT) Cobo Cibo ⎯ ⎯ ⎯ ⎯ — 90 ⎯ ⎯ ⎯ ⎯ ⎯ 1.2 1.1 20 150 mV mV mV mV mV mV mΩ V V pF pF Current Gain-Bandwidth Product fT ⎯ 260 ⎯ MHz Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time ton td tr toff ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 60 20 40 225 205 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ns ns ns ns ns Notes: Max ⎯ ⎯ ⎯ ⎯ 100 0.5 Unit V V V V nA μA nA nA ⎯ Test Condition IC = 100μA, IE = 0A IC = 10mA, IB = 0A IE = 100μA, IC = 0A IE = 100μA, IB = 0A VCB = 20V, IE = 0A VCB = 20V, IE = 0, TA = 125°C VCE = 20V, VBE = 0V VBE = 5.6V, IC = 0A VCE = 2V, IC = 100mA VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE = 2V, IC = 2A IC = 100mA, IB = 1mA IC = 500mA, IB = 25mA IC = 1A, IB = 50mA IC = 1.5A, IB = 30mA IC = 2A, IB = 100mA IC = 2A, IB = 40mA IC = 1A, IB = 50mA VCE = 2V, IC = 2A IC = 2A, IB = 100mA VCB = 10V, f = 1.0MHz VEB = 0.5V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz VCC = 10V, IC = 1A IB2 = -IB1 = 50mA 5. Short duration pulse test used to minimize self-heating effect. 1,200 2.8 1,100 T A = 150°C 1,000 IB = 5mA 2.0 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 2.4 IB = 4mA 1.6 IB = 3mA 1.2 IB = 2mA 0.8 IB = 1mA 900 TA = 125°C 800 T A = 85°C 700 T A = 25°C 600 500 400 T A = -55°C 300 200 0.4 100 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage ZXTN26020DMF Documnt Number: DS31953 Rev. 2 - 1 3 of 6 www.diodes.com 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical DC Current Gain vs. Collector Current September 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN26020DMF VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 20 0.1 TA = 85°C TA = 150°C TA = 25°C T A = 125°C 0.01 1.0 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 TA = -55°C 0.001 0.1 VCE = 5V 0.8 TA = -55°C 0.6 TA = 25°C 0.4 T A = 85°C TA = 150°C 0 0.1 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 1.2 f = 1MHz IC/IB = 10 1.0 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.8 TA = -55°C 0.6 TA = 25°C T A = 85°C 0.4 T A = 125°C 100 Cibo Cobo 10 T A = 150°C 0.2 1 0 0.1 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current 500 0 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Capacitance Characteristics 40 100 ICBO, COLLECTOR CUTOFF CURRENT (nA) fT, GAIN-BANDWIDTH PRODUCT (MHz) TA = 125°C 0.2 VCE = 10V 400 300 200 100 VCBE = 20V IC = 0 10 0 0 5 10 15 20 25 30 35 40 45 50 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical Gain-Bandwidth Product vs. Collector Current ZXTN26020DMF Documnt Number: DS31953 Rev. 2 - 1 1 -50 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 11 Collector Cutoff Current vs. Ambient Temperature 4 of 6 www.diodes.com -25 September 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN26020DMF Package Outline Dimensions A DFN1411-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 b 0.25 0.35 0.30 D 1.35 1.475 1.40 D2 0.65 0.85 0.75 E 1.05 1.18 1.10 e ⎯ ⎯ 0.55 L 0.225 0.325 0.275 L1 ⎯ ⎯ 0.20 All Dimensions in mm A1 Suggested Pad Layout C X2 X1 G2 X Y G1 Dimensions Z G1 G2 X X1 X2 Y C Value (in mm) 1.38 0.15 0.15 0.95 0.75 0.40 0.75 0.76 Z ZXTN26020DMF Documnt Number: DS31953 Rev. 2 - 1 5 of 6 www.diodes.com September 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN26020DMF IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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