ZETEX ZXTDBM832

ZXTDBM832
MPPS™ Miniature Package Power Solutions
DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
VCEO=20V; RSAT = 47m ; IC= 4.5A
DESCRIPTION
Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline,
these new 4th generation low saturation dual transistors offer extremely low on
state losses making them ideal for use in DC-DC circuits and various driving
and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packges
Improved circuit efficiency & power levels
3mm x 2mm (Dual die) MLP
PCB area and device placement savings
Lower package height (nom 0.9mm)
C1
C2
Reduced component count
FEATURES
• Low Equivalent On Resistance
B1
B2
• Extremely Low Saturation Voltage (150mV @1A)
• hFE characterised up to 6A
• IC=4.5A Continuous Collector Current
E2
• 3mm x 2mm MLP
E1
APPLICATIONS
• DC - DC Converters
• Charging circuits
• Power switches
PINOUT
• Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXTDCM832TA
7 ⴕⴕ
8mm
3000
ZXTDCM832TC
13ⴕ ⴕ
8mm
10000
DEVICE MARKING
3mm x 2mm MLP
underside view
DBB
ISSUE 1 - JUNE 2002
1
ZXTDBM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V CBO
40
V
Collector-Emitter Voltage
V CEO
20
V
Emitter-Base Voltage
V EBO
7.5
V
Peak Pulse Current
I CM
12
A
Continuous Collector Current (a)(f)
IC
4.5
A
Continuous Collector Current (b)(f)
IC
5
A
Base Current
IB
1000
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
PD
1.13
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
PD
3
24
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(f)
R θJA
83.3
°C/W
Junction to Ambient (b)(f)
R θJA
51
°C/W
Junction to Ambient (c)(f)
R θJA
125
°C/W
Junction to Ambient (d)(f)
R θJA
111
°C/W
Junction to Ambient (d)(g)
R θJA
73.5
°C/W
Junction to Ambient (e)(g)
R θJA
41.7
°C/W
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
ISSUE 1 - JUNE 2002
2
ZXTDBM832
TYPICAL CHARACTERISTICS
1
DC
1s
100ms
0.1
10ms
1ms
Note (a)(f)
0.01
100us
Single Pulse, Tamb=25°C
0.1
Thermal Resistance (°C/W)
Max Power Dissipation (W)
VCE(SAT)
Limited
1
10
2.5
2oz Cu
Note (a)(f)
2.0
1oz Cu
Note (d)(g)
1.5
1.0
1oz Cu
Note (d)(f)
0.5
0.0
0
25
50
75
100
125
Temperature (°C)
Safe Operating Area
Derating Curve
Note (a)(f)
80
60
D=0.5
40
Single Pulse
D=0.2
20
D=0.05
D=0.1
0
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
2oz copper
Note (g)
Tamb=25°C
Continuous
2.5
2oz copper
Note (f)
2.0
1.5
1.0
1oz copper
Note (f)
0.5
0.0
0.1
1
1oz copper
Note (f)
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (g)
1
10
100
Thermal Resistance v Board Area
3.5
3.0 Tj max=150°C
225
200
175
150
125
100
75
50
25
0
0.1
150
Board Cu Area (sqcm)
Transient Thermal Impedance
PD Dissipation (W)
Tamb=25°C
2oz Cu
Note (e)(g)
3.0
VCE Collector-Emitter Voltage (V)
Thermal Resistance (°C/W)
IC Collector Current (A)
3.5
10
1oz copper
Note (g)
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 1 - JUNE 2002
3
ZXTDBM832
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V (BR)CBO
40
Collector-Emitter Breakdown
Voltage
V (BR)CEO
Emitter-Base Breakdown Voltage
V (BR)EBO
MAX.
UNIT
CONDITIONS.
100
V
I C =100␮A
20
27
V
I C =10mA*
7.5
8.2
V
I E =100␮A
Collector Cut-Off Current
I CBO
25
nA
V CB =32V
Emitter Cut-Off Current
I EBO
25
nA
V EB =6V
Collector Emitter Cut-Off Current
I CES
25
nA
V CES =16V
Collector-Emitter Saturation
Voltage
V CE(sat)
8
15
mV
I C =0.1A, I B =10mA*
I C =1A, I B =10mA*
90
150
mV
115
135
mV
190
250
mV
I C =2A, I B =50mA*
I C =3A, I B =100mA*
210
270
mV
I C =4.5A, I B =125mA*
Base-Emitter Saturation Voltage
V BE(sat)
0.98
1.05
V
I C =4.5A, I B =125mA*
Base-Emitter Turn-On Voltage
V BE(on)
0.88
0.95
V
Static Forward Current Transfer
Ratio
h FE
200
300
200
100
400
450
360
180
Transition Frequency
fT
100
140
I C =4.5A, V CE =2V*
I C =10mA, V CE =2V*
I C =0.2A, V CE =2V*
I C =2A, V CE =2V*
I C =6A, V CE =2V*
MHz
30
I C =50mA, V CE =10V
f=100MHz
Output Capacitance
C obo
23
pF
V CB =10V, f=1MHz
Turn-On Time
t (on)
170
ns
Turn-Off Time
t (off)
400
ns
V CC =10V, I C =3A
I B1 =I B2 =10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 1 - JUNE 2002
4
ZXTDBM832
TYPICAL CHARACTERISTICS
0.25
IC/IB=50
Tamb=25°C
0.20
100°C
VCE(SAT) (V)
VCE(SAT) (V)
100m
IC/IB=100
10m
IC/IB=50
10m
100m
25°C
0.10
-55°C
0.05
IC/IB=10
1m
1m
0.15
1
0.00
1m
10
IC Collector Current (A)
10m
100m
1
10
1
10
IC Collector Current (A)
VCE(SAT) v IC
VCE(SAT) v IC
630
1.0
100°C
0.8
360
25°C
270
-55°C
0.4
180
0.2
90
10m
100m
1
10
0
hFE v IC
VBE(ON) (V)
0.8
-55°C
0.6
25°C
1m
100°C
10m
100m
1
IC Collector Current (A)
-55°C
0.6
25°C
100°C
0.4
10m
100m
IC Collector Current (A)
VBE(SAT) v IC
VCE=2V
0.4
0.8
1m
IC Collector Current (A)
1.0
IC/IB=50
450
0.6
0.0
1m
1.0
540
VBE(SAT) (V)
Normalised Gain
1.2
Typical Gain (hFE)
VCE=2V
10
VBE(ON) v IC
ISSUE 1 - JUNE 2002
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ZXTDBM832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MILLIMETRES
DIM
MAX.
MIN.
MAX.
A
0.80
1.00
0.031
0.039
A1
0.00
0.05
0.00
0.002
E
A2
0.65
0.75
0.0255
0.0295
E2
0.43
0.63
0.017
A3
0.15
0.25
0.006
0.0098
E4
0.16
0.36
0.006
0.014
b
0.24
0.34
0.009
0.013
L
0.20
0.45
0.0078
0.0157
b1
0.17
0.30
0.0066
0.0118
L2
0.125
0.00
0.005
D
3.00 BSC
e
0.118 BSC
D2
0.82
1.02
0.032
0.040
D3
1.01
1.21
0.0397
0.0476
MIN.
r
⍜
MAX.
INCHES
MIN.
0.65 REF
2.00 BSC
0.075 BSC
0⬚
12⬚
MIN.
MAX.
0.0256 BSC
0.0787 BSC
0.0249
0.0029 BSC
0⬚
12⬚
© Zetex plc 2002
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ISSUE 1 - JUNE 2002
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