VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 1150 A 1800 A 15000 A 0.95 V 0.575 mΩ Ω Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability Blocking Maximum rated values 1) Symbol Conditions 5STP 12F4200 5STP 12F4000 5STP 12F3600 VDRM, VRRM f = 50 Hz, tp = 10 ms 4200 V 4000 V 3600 V VRSM tp = 5 ms, single pulse 4600 V 4400 V 4000 V dV/dtcrit Exp. to 0.67 x VDRM, Tvj = 125°C 1000 V/µs Characteristic values Parameter Symbol Conditions min typ max Unit Forward leakage current IDRM VDRM, Tvj = 125°C 200 mA Reverse leakage current IRRM VRRM, Tvj = 125°C 200 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min 14 typ 22 max Unit 24 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Surface creepage distance DS 25 mm Air strike distance Da 14 mm 1) min typ 0.6 Maximum ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit kg 5STP 12F4200 On-state Maximum rated values 1) Parameter Symbol Conditions Average on-state current ITAVM RMS on-state current ITRMS Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70°C tp = 10 ms, Tvj = 125°C, VD = VR = 0 V tp = 8.3 ms, Tvj = 125°C, VD = VR=0 V max Unit 1150 A 1800 A 15000 A 1125 kA2s 16000 A 1062 kA2s Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 2000 A, Tvj= 125°C 2.1 V Threshold voltage VT0 IT = 600 A - 1800 A, Tvj= 125°C 0.95 V Slope resistance rT 0.575 mΩ Holding current IH Tvj = 25°C 80 mA Tvj = 125°C 60 mA Tvj = 25°C 500 mA Tvj = 125°C 200 mA Latching current Switching Maximum rated values IL min typ max Unit 1) Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit-commutated turn-off tq time min typ Cont. Tvj = 125°C, ITRM = 2000 A, f = 50 Hz VD ≤ 0.67⋅VDRM, Cont. IFG = 2 A, tr = 0.5 µs f = 1Hz Tvj = 125°C, ITRM = 2000 A, VR = 200 V, diT/dt = -5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs, max Unit 100 A/µs 1000 A/µs 600 µs Characteristic values Parameter Symbol Conditions Recovery charge Qrr Tvj = 125°C, ITRM = 2000 A, VR = 200 V, diT/dt = -5 A/µs Delay time td VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs min typ 2500 max Unit 4000 µAs 2 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-03 Jan. 02 page 2 of 6 5STP 12F4200 Triggering Maximum rated values 1) Parameter Symbol Conditions min typ Peak forward gate voltage VFGM 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Gate power loss PG 3 W Average gate power loss PGAV For DC gate current max Unit see Fig. 9 Characteristic values Parameter Symbol Conditions Gate trigger voltage VGT Tvj = 25°C 2.6 V Gate trigger current IGT Tvj = 25°C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125°C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125°C 10 mA Thermal Maximum rated values min typ max Unit 1) Parameter Symbol Conditions Operating junction temperature range Tvj min Storage temperature range Tstg typ -40 max Unit 125 °C 140 °C Characteristic values Parameter Symbol Conditions max Unit Double-side cooled 17 K/kW Rth(j-c)A Anode-side cooled 33 K/kW Rth(j-c)C Cathode-side cooled 35 K/kW Double-side cooled 4 K/kW Single-side cooled 8 K/kW Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 10.35 3.76 2.29 0.67 τi(s) 0.3723 0.0525 0.0057 0.0023 Fig. 1 Transient thermal impedance junction-to case. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-03 Jan. 02 page 3 of 6 5STP 12F4200 Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. Tj=125°C, 10ms half sine Fig. 4 On-state power dissipation vs. mean on-state current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-03 Jan. 02 page 4 of 6 5STP 12F4200 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20 µs diG/dt IGon 10 % tr t tp (IGM) tp (IGon) Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-03 Jan. 02 page 5 of 6 5STP 12F4200 Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abbsem.com Doc. No. 5SYA1021-03 Jan. 02