ABB 5STP26N6200

VDSM
ITAVM
ITRMS
ITSM
VT0
rT
=
=
=
=
=
=
6500 V
2810 A
4410 A
45000 A
1.12 V
0.29 mΩ
Ω
Phase Control Thyristor
5STP 26N6500
Doc. No. 5SYA1001-03 Jan. 02
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Designed for traction, energy and industrial applications
•
Optimum power handling capability
•
Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol
Conditions
5STP 26N6500 5STP 26N6200 5STP 26N5800
VDSM, VRSM
f = 5 Hz, tp = 10ms
6500 V
6200 V
5800 V
VDRM, VRRM
f = 50 Hz, tp = 10ms
5600 V
5300 V
4900 V
VRSM1
tp = 5ms, single pulse
7000 V
6700 V
6300 V
dV/dtcrit
Exp. to 0.67 x VDRM, Tj = 125°C
2000 V/µs
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Forwarde leakage current
IDSM
VDSM, Tj = 125°C
600
mA
Reverse leakage current
IRSM
VRSM, Tj = 125°C
600
mA
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
FM
Acceleration
a
Acceleration
a
min
81
typ
90
max
Unit
108
kN
Device unclamped
50
m/s
2
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
Weight
m
Surface creepage distance
DS
56
mm
Air strike distance
Da
22
mm
1)
min
typ
2.9
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
Unit
kg
5STP 26N6500
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state
current
ITAVM
RMS on-state current
ITRMS
Max. peak non-repetitive
surge current
ITSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
ITSM
Limiting load integral
I2t
min
typ
Half sine wave, Tc = 70°C
tp = 10 ms, Tj = 125°C,
VD=VR = 0 V
tp = 8.3 ms, Tj = 125°C,
VD=VR=0 V
max
Unit
2810
A
4410
A
45000
A
10125
kA2s
50000
A
10375
kA2s
Characteristic values
Parameter
Symbol Conditions
On-state voltage
VT
IT = 3000 A, Tj= 125°C
Threshold voltage
VT0
Slope resistance
Holding current
Latching current
Switching
Maximum rated values
max
Unit
2
V
IT = 1300 A - 4000 A, Tj= 125°C
1.12
V
rT
Tj = 125°C
0.29
mΩ
IH
Tj = 25°C
125
mA
Tj = 125°C
75
mA
Tj = 25°C
500
mA
Tj = 125°C
250
mA
IL
min
typ
1)
Parameter
Symbol Conditions
Critical rate of rise of onstate current
di/dtcrit
Critical rate of rise of onstate current
di/dtcrit
Circuit-commutated turn-off tq
time
min
typ
Cont.
Tj = 125°C, ITRM = 3000 A, f = 50 Hz
VD ≤ 0.67⋅VDRM,
Cont.
IFG = 2 A, tr = 0.5 µs
f = 1Hz
Tj = 125°C, ITRM = 3000 A,
VR = 200 V, diT/dt = -1 A/µs,
VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs,
max
Unit
200
A/µs
1000
A/µs
800
µs
Characteristic values
Parameter
Symbol Conditions
Recovery charge
Qrr
Tj = 125°C, ITRM = 3000 A,
VR = 200 V, diT/dt = -1 A/µs
Delay time
td
VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs
min
typ
2700
max
Unit
3700
µAs
3
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-03 Jan. 02
page 2 of 6
5STP 26N6500
Triggering
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
Peak forward gate voltage
VFGM
12
V
Peak forward gate current
IFGM
10
A
Peak reverse gate voltage
VRGM
10
V
Gate power loss
PG
3
W
Average gate power loss
PGAV
For DC gate current
max
Unit
see Fig. 9
Characteristic values
Parameter
Symbol Conditions
Gate trigger voltage
VGT
Tj = 25°C
2.6
V
Gate trigger current
IGT
Tj = 25°C
400
mA
Gate non-trigger voltage
VGD
VD = 0.4 x VDRM, Tvjmax = 125°C
0.3
V
Gate non-trigger current
IGD
VD = 0.4 x VDRM, Tvjmax = 125°C
10
mA
Thermal
Maximum rated values
min
typ
max
Unit
1)
Parameter
Symbol Conditions
Operating junction
temperature range
Tj
min
Storage temperature range Tstg
typ
-40
max
Unit
125
°C
140
°C
Characteristic values
Parameter
Symbol Conditions
max
Unit
Double side cooled
5.7
K/kW
Rth(j-c)A
Anode side cooled
11.4
K/kW
Rth(j-c)C
Cathode side cooled
11.4
K/kW
Double side cooled
1
K/kW
Single side cooled
2
K/kW
Thermal resistance junction Rth(j-c)
to case
Thermal resistance case to Rth(c-h)
heatsink
Rth(c-h)
min
typ
Analytical function for transient thermal
impedance:
n
ZthJC(t) = å Ri(1 - e -t/τ i )
i =1
i
1
2
3
4
Ri(K/kW)
3.4
1.26
0.68
0.35
τi(s)
0.8685
0.1572
0.0219
0.0078
Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-03 Jan. 02
page 3 of 6
5STP 26N6500
On-state characteristic model:
VT = A + B ⋅ iT + C ⋅ ln(iT +1) + D ⋅ IT
Valid for iT = 500 – 8000 A
A
B
C
D
-4.7752e-1
1.8600e-4
2.6488e-1
-3.8650e-3
Fig. 2 On-state characteristics.
Tj=125°C, 10ms half sine
Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded.
Fig. 3 On-state characteristics.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-03 Jan. 02
page 4 of 6
5STP 26N6500
Fig. 6 Surge on-state current vs. pulse length. Halfsine wave.
IG (t)
100 %
90 %
IGM
IGM
IGon
diG/dt
tr
tp(IGM)
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
≈ 2..5 A
≥ 1.5 IGT
≥ 2 A/µs
≤ 1 µs
≈ 5...20µs
diG/dt
IGon
10 %
tr
t
tp (IGM)
tp (IGon)
Fig. 8 Recommendet gate current waveform.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-03 Jan. 02
page 5 of 6
5STP 26N6500
Fig. 12 Device Outline Drawing.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
[email protected]
www.abbsem.com
Doc. No. 5SYA1001-03 Jan. 02