66191 Mii PROTON RADIATION TOLERANT OPTOCOUPLER (Single Channel, Electrical EQUIVALENT TO 66099) REVISION A 7/14/00 Features: Applications: • • • • • • • • • • OPTOELECTRONIC PRODUCTS DIVISION Current transfer ratio: 150% typical Base lead provided for conventional transistor biasing Low power consumption High radiation immunity 1000 Vdc isolation test voltage Military and Space High Reliability Systems Voltage Level Shifting Isolated Receiver Inputs Communication Systems DESCRIPTION Radiation tests performed on the 66099 optocoupler have shown that the electrical performance of the device after irradiation is an order of magnitude better than the 4N49 optocouplers. The 66191 has the same components and layout in a 6 pin, hermetically sealed leadless chip carrier package. Figures 1 and 2 from the 66099 data sheet illustrate the radiation performance of the device ABSOLUTE MAXIMUM RATINGS (ta = 25°C unless otherwise noted) Storage Temperature..........................................................................................................................................-55°C to +150°C Operating Free-Air Temperature Range.............................................................................................................-55°C to +100°C Lead Solder Temperature (10 seconds max)......................................................................................................................240°C Input to output Isolation Voltage.........(see Note 1)...........................................................................................................+1kVdc * Input Diode Peak Forward Input Current................................................................. .............................................................................. 50mA Reverse Input Voltage...............................................................................................................................................................7V Input Power Dissipation.......................(see Note 2)............................................................................................................80mW *Output Photodetector Continuous Collector Current................... ...........................................................................................................................50mA Collector-Emitter Voltage........................................................................................................................................................ 40V Emitter-Collector Voltage.......................................................................................................................................................... 5V Collector-Base Voltage............................................................................................................................................................40V Power Dissipation...............................(see Note 3)...........................................................................................................300mW Notes: 1. Measured with input diode leads shorted together and output leads shorted together 2. Derate linearly 0.80mW/°C above 25°C. 3. Derate linearly 3.0mW/°C above 25°C. Package Dimensions 0.253 [6.42] 0.237 [6.01] Schematic Diagram 0.087 [2.22] 0.071 [1.81] 1 C 3 PIN 1 IDENTIFIER 0.178 [4.52] 0.162 [4.11] 0.036 [0.91] 0.020 [0.51] 2 1 4 6 5 0.098 [2.49] 0.082 [2.08] 0.113 [2.87] 0.097 [2.46] 3 E 0.055 [1.40] 0.045 [1.14] 6 0.078 [1.99] 0.062 [1.58] MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 5 - 40 B 5 4 66191 PROTON RADIATION TOLERANT OPTOCOUPLER. SINGLE CHANNEL REVISION A 7/14/00 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS 100 µA VR = 3V 1.8 2 V IF = 10mA TYP MAX UNITS TEST CONDITIONS V IC = 100µA, IF = 0 40 V IC = 1mA, IB = 0, IF = 0 5 V IE = 100µA, IF = 0 100 nA VCE = 20V, 20 µA MAX UNITS TEST CONDITIONS % VCE = 1V, IF = 10mA Input Diode Static Reverse Current IR Input Diode Static Forward Voltage VF .8 SYMBOL MIN V(BR)CBO 40 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Collector Breakdown Voltage V(BR)ECO TYP NOTE OUTPUT TRANSISTOR TA = 25°C unless otherwise specified. PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Dark Current ICEO +100°C NOTE COUPLED CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN CTR 100 Current Transfer Ratio Collector-Emitter Saturation Voltage TYP NOTE VCE(SAT) 0.3 V IF = 20mA, IC=10mA Input -Output Isolation Current II/o 100 nA VIN-OUT = 1000V 1 Input to Output Capacitance CIO 5 pF f = 1MHz, VIN-OUT = 1kV 1 2.5 Rise Time tr 20 µs VCC = 10V, IF = 10mA, Fall Time tf 20 µs VCC = 10V, IF = 10mA, RL = 100Ω RL = 100Ω NOTES: 1) These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS Input Current, Low Level IFL 0 100 µA Input Current, High Level IFH 10 20 mA Supply Voltage VCE 5 20 TA -55 +100 Operating Temperature V ° C SELECTION GUIDE PART NUMBER 66191-001 66191-101 66191-103 66191-105 PART DESCRIPTION Proton radiation tolerant optocoupler, commercial Proton radiation tolerant optocoupler, -55 to +100°C Temperature range (JAN equivalent) Proton radiation tolerant optocoupler , 100% JANTX screened Proton radiation tolerant optocoupler , 100% JANTXV screened MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 5 - 41