7MBP75RTB060 600V / 75A 7 in one-package IPM-R3 series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Symbol Item Rating Min. VDC DC VDC(surge) Surge Shortoperating V SC VCES *1 DC IC 1ms ICP Duty=75.0% -IC *2 Collector power dissipation One transistor PC *3 Collector current DC IC 1ms ICP Forward Current of Diode IF Collector power dissipation One transistor PC *3 Input voltage of power supply for Pre-Driver VCC *4 Input signal voltage Vin *5 Input signal current Iin Alarm signal voltage VALM *6 Alarm signal current IALM *7 Junction temperature Tj Operating case temperature Top Storage temperature Tstg Isolating voltage (Case-Terminal) Viso *8 Screw torque Mounting (M5) Terminal (M5) Brake Inverter Bus voltage (between terminal P and N) Collector-Emitter voltage Collector current 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 - Unit Max. 450 500 400 600 75 150 75 198 50 100 50 198 20 Vcc+0.5 3 Vcc 20 150 100 125 AC2.5 3.5 *9 3.5 *9 V V V V A A A W A A A W V V mA V mA °C °C °C kV N·m N·m Fig.1 Measurement of case temperature Note *1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB. *2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.855/(75 x 2.6)x100=75.0% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter] Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Break] *4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10. *6 : VALM shall be spplied to the voltage between terminal No. 16 and 10. *7 : IALM shall be applied to the input current to terminal No. 16. *8 : 50Hz/60Hz sine wave 1 minute. *9 : Recommendable Value : 2.5 to 3.0 N·m Weight Item Weight *9 : (For 1 device, Case is under the device) Symbol Wt Min. - Typ. 450 Max. - Unit g 7MBP75RTB060 IGBT-IPM Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Brake Inverter Item Collector current at off signal input Collector-Emitter saturation voltage Symbol ICES VCE(sat) Forward voltage of FWD VF Collector current at off signal input Collector-Emitter saturation voltage ICES VCE(sat) Forward voltage of Diode VF Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition) ton toff trr PAV Condition Min. VCE=600V Vin terminal open. Terminal Ic=75A Chip Terminal Ic=75A Chip VCE=600V Vin terminal open. Terminal Ic=50A Chip Terminal -Ic=50A Chip VDC=300V,Tj=125°C IC=75A Fig.1, Fig.6 VDC=300V, IC=75A Fig.1, Fig.6 Internal wiring inductance=50nH Main circuit wiring inductace=54nH Typ. 1.2 40 Max. 2.0 1.6 1.75 1.9 - Unit 1.0 2.4 2.6 1.0 2.2 3.3 3.6 0.3 - mA V V mA V V V µs mJ Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Symbol Iccp ICCN Vin(th) Input zener voltage Alarm signal hold time VZ tALM Limiting resistor for alarm RALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Min. Typ. Max. 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Unit mA mA V V V ms ms ms ohm Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Level of brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH TCOH TCH V UV VH Condition Min. Tj=125°C Tj=125°C Tj=125°C Tj=125°C Fig.4 surface of IGBT chips 113 75 150 110 11.0 0.2 VDC=0V, Ic=0A, Case temperature Typ. Max. Unit 5 - 8 - 125 12.5 - A 20 20 0.5 Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance INV Brake IGBT FWD IGBT Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Min. - Typ. 0.05 Max. 0.63 0.855 0.63 - Unit °C/W °C/W °C/W °C/W Min. Typ. Max. Unit Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating ±2.0 - - kV ±5.0 - - kV Min. 13.5 2.5 Typ. 15.0 - Max. 400 16.5 3.0 Unit V V Nm Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol V DC V CC - A µs µs °C °C °C V 7MBP75RTB060 IGBT-IPM Vin on Vin(th) Vin(th) trr 90% 50% Ic 90% 10% toff ton Figure 1. Switching Time Waveform Definitions off off /Vin on on Gate on Gate off Vge (Inside IPM) Fault (Inside IPM) normal alarm /ALM 2ms(typ.) tALM>Max. tALM>Max. tALM Fault : Over-current, Over-heat or Under-voltage Figure 2. Input / Output Timing Diagram tsc Ic Ic Ic IALM IALM IALM Figure. 4 Definition of tsc P Vcc 20k VccU P CT VinU Ic Vin GND AC200V + V N Figure 6. Switching Characteristics Test Circuit Vcc DC 15V 20k VinX W Icc 4700p Sw2 GND DC 300V 4504 U Sw1 GNDU L HCPL- 20k DC 15V IPM + DC 15V N Vcc Noise I PM DC 15V Earth Cooling Fin P U Vin P.G +8V fsw V W GND N Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 7MBP75RTB060 IGBT-IPM Block diagram VccU 3 VinU 2 P Pre-Driver U GNDU 1 VccV 6 VinV 5 Pre-Driver V GNDV 4 VccW 9 VinW Pre-Driver 8 W GNDW 7 Vcc 11 Pre-Driver VinX 13 GND 10 VinY 14 Pre-Driver VinZ 15 Pre-Driver B VinDB Pre-Driver 12 N RALM ALM 16 Over heating protection circuit 1.5kΩ Pre-driver include following functions 1 Amplifier for drive 2 Short circuit protection 3 Under voltage lockout circuit 4 Over current protection 5 IGBT chip over heating protection Outline drawings, mm Mass : 450g 7MBP75RTB060 IGBT-IPM Characteristics Control circuit characteristics (Respresentative) Power supply current vs. Switching frequency N-side Tc=125°C ········· P-side Input signal threshold voltage vs. Power supply voltage 2.5 50 2.0 Input signal threshold voltage Vin (ON), Vin (OFF), (V) Power supply current Icc (mA) 60 Tj=25°C ········· Tj=125°C 40 30 20 10 1.5 1.0 0.5 0 0 0 5 10 15 20 25 12 13 Switching frequency fsw (kHz) 14 15 16 17 18 Power supply voltage Vcc (V) Under voltage hysterisis vs. Junction temperature Under voltage vs. Junction temperature 14 1.0 Undervoltage hysterisis VH (V) Under voltage VUVT (V) 12 10 8 6 4 0.8 0.6 0.4 0.2 2 0 0 20 40 60 80 100 120 20 140 40 Alarm hold time vs. Power supply voltage 100 120 140 Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC 3.0 200 Overheating protection TCOH,TjOH (°C) OH hysterisis TCH,TjH (°C) Alarm hold time tALM (msec.) 80 Junction temperature Tj (°C) Junction temperature Tj (°C) 2.5 2.0 1.5 1.0 0.5 0 12 60 150 100 50 0 13 14 15 16 Power supply voltage Vcc (V) 17 18 12 13 14 15 16 Power supply voltage Vcc (V) 17 18 7MBP75RTB060 IGBT-IPM Main circuit characteristics (Respresentative) Collector current vs. Collector-Emitter voltage Tj=25°C(Terminal) 80 80 70 70 60 60 Collector current Ic (A) Collector current Ic (A) Collector current vs. Collector-Emitter voltage Tj=25°C(Chip) 50 40 30 20 50 40 30 20 10 10 0 0 0 0.5 1 1.5 2 2.5 0 3 80 80 70 70 60 60 Collector current Ic (A) Collector current Ic (A) 1 1.5 2 2.5 3 Collector current vs. Collector-Emitter voltage Tj=125°C(Terminal) Collector current vs. Collector-Emitter voltage Tj=125°C(Chip) 50 40 30 20 50 40 30 20 10 10 0 0 0 0.5 1 1.5 2 2.5 0 3 0.5 1 1.5 2 2.5 Collector-Emitter voltage VCE (V) Collector-Emitter voltage VCE (V) Forward current vs. Forward voltage (Chip) Forward current vs. Forward voltage (Terminal) 3 150 Forward current IF (A) 150 Forward current IF (A) 0.5 Collector-Emitter voltage VCE (V) Collector-Emitter voltage VCE (V) 100 50 0 100 50 0 0 0.5 1 1.5 Foeward voltage VF (V) 2 2.5 0 0.5 1 1.5 Foeward voltage VF (V) 2 2.5 7MBP75RTB060 IGBT-IPM Switching Loss vs. Collector current Edc=300V, Vcc=15V, Tj=125°C Switching Loss vs. Collector current Edc=300V, Vcc=15V, Tj=25°C 6 Switching loss Eon,Eoff, Err (mJ/cycle) Switching loss Eon,Eoff, Err (mJ/cycle) 6 5 4 3 2 1 5 4 3 2 1 0 0 0 20 40 60 0 80 20 40 60 80 Collector current IC (A) Collector current IC (A) Reverse biased safe operating area Vcc=15V, Tj < =125°C Transient thermal resistance Thermal resistance Rth(j-c) (°C/W) 300 Collector current Ic (A) 250 200 150 100 50 0 0 100 200 300 400 500 600 700 1 0.1 0.01 0.001 0.01 Collector-Emitter voltage VCE (V) Power derating for IGBT (per device) 1 Power derating for FWD (per device) 250 200 Collector power dissipation Pc (W) Collector power dissipation Pc (W) 0.1 Pulse width Pw (sec.) 200 150 100 50 0 150 100 50 0 0 20 40 60 80 100 120 Case temperature Tc (°C) 140 160 0 20 40 60 80 100 120 Case temperature Tc (°C) 140 160 7MBP75RTB060 IGBT-IPM Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=125°C Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=25°C 10000 Switching time ton,toff,tf (nsec.) Switching time ton,toff,tf (nsec.) 10000 1000 100 100 10 10 20 40 60 80 100 120 Collector current Ic (A) 100 10 1 20 40 60 80 Foeward current IF (A) 20 40 60 80 Collector current Ic (A) Reverse recovery characteristics trr, Irr, vs. IF Reverse recovery current Irr (A) Reverse recovery time trr (nsec.) 1000 100 120 100 120 7MBP75RTB060 IGBT-IPM Dynamic brake characteristics (Respresentative) Collector current vs. Collector-Emitter voltage Tj=125°C (Terminal) 80 80 60 60 Collector current Ic (A) Collector current Ic (A) Collector current vs. Collector-Emitter voltage Tj=25°C (Terminal) 40 20 0 40 20 0 0 0.5 1 1.5 2 2.5 3 0 Collector-Emitter voltage VCE (V) 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage VCE (V) Reverse biased safe operating area Vcc=15V, Tj < = 125°C Transient thermal resistance 200 150 Collector current Ic (A) Thermal resistance Rth(j-c) (°C/W) 1 0.1 0.01 50 0 0.001 0.01 0.1 1 Power derating for IGBT (per device) 250 200 1 50 100 50 0 0 20 40 60 80 100 0 100 200 300 400 500 600 Collector-Emitter voltage VCE (V) Pulse width Pw (sec.) Collector power dissipation Pc (W) 100 120 Case temperature Tc (°C) 140 160 700