9014B 9014B Silicon NPN Epitaxial Transistor Description :The 9014B is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9015B Chip Appearance Chip Size 350um×350um Chip Thickness 210±20um Bonding Pad Size Base 110um×110um Emitter 100um×100um Front Metal Al Backside Metal Au(As) Scribe line width 40um Wafer Size 6 inch Electrical Characteristics( Ta=25℃) Characteristic Symbol Test Condition Min Max Unit Collector Cutoff Current ICBO VCB=40V, IE=0 0.1 uA Emitter Cutoff Current IEBO VEB=5V, IC=0 0.1 uA Collector-Base Breakdown Voltage BVCBO IC=0.1mA, Collector-Emitter Breakdown Voltage BVCEO IC=1mA, Emitter-Base Breakdown Voltage BVEBO IE=0.1mA, DC Current Gain Collector Saturation Voltage May.2004 hFE VCE(sat) VCE=5V, IC=1mA IC=100mA,IB=5mA Version :0.0 50 V 45 V 5.0 150 V 600 0.30 Page 1 of 1 V