30–36 GHz GaAs MMIC Power Amplifier AA032P1-00 0.000 ■ 25 dBm Typical P1 dB Output Power at 31 GHz 1.099 2.415 ■ Single Gate and Drain Biases 0.597 Chip Outline 1.929 Features 0.000 0.120 0.107 ■ 11 dB Typical Small Signal Gain ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883 MT 2010 1.143 1.143 Description 2.179 2.166 0.597 1.099 2.285 1.937 Alpha’s two-stage reactively-matched Ka band GaAs MMIC power amplifier has a typical P1 dB of 25 dBm with 10 dB associated gain and 15% power added efficiency at 31 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate solder or epoxy die attach processes. Single gate and drain bias pads cover both stages, with the added convenience that the chip can be wire bonded from either side for either bias. All chips are screened for gain, output power, efficiency and Sparameters prior to shipment for guaranteed performance. A broad range of applications exist in both the military and commercial areas where high power and gain are required. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55°C to +90°C Storage Temperature (TST) -65°C to +150°C Bias Voltage (VD) 7 VDC Power In (PIN) 22 dBm Junction Temperature (TJ) 175°C Electrical Specifications at 25°C (VDS = 6 V, VGS = -1 V) Parameter Condition Drain Current (at Saturation) Symbol Min. IDS Max. Unit 400 450 mA -7 -6 dB -8 -6 Small Signal Gain F = 30–31, 34–36 GHz G Input Return Loss F = 30–31, 34–36 GHz RLI Output Return Loss F = 30–31, 34–36 GHz RLO F = 31 GHz P1 dB 24 25 dBm 25 Output Power at 1 dB Gain Compression 8 Typ.2 11 dB dB Saturated Output Power F = 31 GHz PSAT 27 dBm Gain at Saturation F = 31 GHz GSAT 8 dB ΘJC 42 °C/W Thermal Resistance1 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A 1 30–36 GHz GaAs MMIC Power Amplifier AA032P1-00 Typical Performance Data 15 10 S21 S-Parameter (dB) 5 0 S22 POUT (dBm) -5 -10 S11 -15 -20 -25 S12 -30 -35 26 27 28 29 30 31 32 33 34 35 36 37 38 Bias Arrangement RF IN POUT 28 GHz POUT 31 GHz PIN (dBm) Typical Small Signal Performance S-Parameters (VDS = 6 V) VG = -1 V POUT 35 GHz 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Frequency (GHz) .01 µF 50 pF 28 27 26 25 24 23 22 21 20 19 18 17 16 Typical Output Power Compression Circuit Schematic 50 pF .01 µF G D VDS = 6 V Detail A RF OUT VG SEE G DETAIL A VD G D G D G D G D D The AA032P1-00 can be biased from either or both sides for both gate and drain biases. For biasing on, adjust VGS from zero to approximately -1 V. Adjust VDS from zero to the desired value (4 V–6 V recommended). Adjust VGS to achieve the desired IDS (400 mA recommended). For biasing off, reverse the biasing on procedure. RF IN D G VG 2 VD Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A RF OUT