AOL1434 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1434 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOL1434 is Pb-free (meets ROHS & Sony 259 specifications). AOL1434L is a Green Product ordering option. AOL1434 and AOL1434L are electrically identical. VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6.3 mΩ (VGS = 10V) RDS(ON) < 10 mΩ (VGS = 4.5V) Ultra SO-8TM Top View Fits SOIC8 footprint ! D D S Bottom tab connected to drain G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C TC=100°C ID IDM Repetitive avalanche energy L=0.3mH C TC=25°C TC=100°C Junction and Storage Temperature Range 11 30 A EAR 135 mJ 38 W 13 2.1 W 1 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A IDSM IAR PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case A 150 PD TA=25°C A V 14 Avalanche Current C Power Dissipation 20 34 TA=25°C TA=70°C Power Dissipation B Units V 50 B Pulsed Drain Current Continuous Drain Current H Maximum 25 RθJA RθJC Typ 18 49 2.5 °C Max 25 60 4 Units °C/W °C/W °C/W AOL1434 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 5 0.1 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.8 On state drain current VGS=10V, VDS=5V 150 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=30A 9.4 VGS=4.5V, ID=20A 7.8 10 VDS=5V, ID=20A 49 DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) 0.74 2050 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=20A µA µA V A 6.3 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 2.5 7.8 Forward Transconductance Output Capacitance 1.4 5.2 TJ=125°C VSD Crss V TJ=55°C gFS Units 1 ID(ON) Coss Max 25 VDS=20V, VGS=0V IDSS IS Typ mΩ mΩ S 1.0 V 50 A 2460 pF 485 pF 280 pF 0.86 1.5 Ω 34 41 nC 17 22 nC 5 nC Gate Drain Charge 3.5 nC Turn-On DelayTime 7.5 ns VGS=10V, VDS=12.5V, RL=0.68Ω, RGEN=3Ω 11 ns 27 ns 8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 19 36 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin a maximum junction temperature of TJ(MAX)=175°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. Rev0: Mar 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOL1434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 60 10V 6V 50 VDS=5V 4.5V 100 ID(A) ID (A) 40 3.5V 50 30 125°C 3.0V 494 692 10 VGS=2.5 0 593 830 0 0 1 2 3 4 1 5 2 3 10 5 193 18 Normalized On-Resistance 1.8 8 VGS=4.5V 6 VGS=10V 4 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics RDS(ON) (mΩ) 25°C 1.4 20 1.6 VGS=10V, 20A 1.4 1.2 VGS=4.5V, 20A 1 2 0 10 20 30 40 50 0.8 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 59 125 100 142 Temperature (°C) 75 150 175 Figure 4: On-Resistance vs. Junction Temperature 100 12 10 ID=20A 10 125°C 1 IS (A) RDS(ON) (mΩ) 25 8 0.1 0.01 125°C 25°C 0.001 6 0.0001 25°C 0.00001 4 0.0 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOL1434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 2500 VDS=12.5V ID=20A Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 2000 1500 1.4 1000 Coss 0 5 10 15 20 25 30 35 40 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 200 TJ(Max)=175°C, TC=25°C 160 10µs 100 DC Power (W) 100µs RDS(ON) limited 25 193 18 1000 10 593 830 Crss 0 0 ID (Amps) 494 692 500 1ms 1 TJ(Max)=175°C TC=25°C 120 80 40 0.1 0.1 1 10 100 0 0.0001 59 0.1 142 Pulse Width (s) 0.001 0.01 VDS (Volts) 1 10 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOL1434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 Power Dissipation (W) ID(A), Peak Avalanche Current 60 TA=25°C 40 30 20 50 40 30 1.4 20 494 692 10 10 0.00001 0 0.0001 0.001 0 25 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 75 100 125 150 193 18 60 50 50 40 40 30 TA=25°C 30 20 20 10 10 0 0.01 0 0 25 50 75 100 125 150 175 0.1 1 59 142 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 175 TCASE (°C) Figure 13: Power De-rating (Note B) Power (W) Current rating ID(A) 593 830 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 Ton 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000