AP2608AGK-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G BVDSS 150V RDS(ON) 1.5Ω ID 0.92A S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. S D SOT-223 G The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ 3 Continuous Drain Current , VGS @ 10V 3 Continuous Drain Current , VGS @ 10V 1 Rating Units 150 V +20 V 0.92 A 0.74 A 3 A 2.8 W IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 45 ℃/W 1 201108112 AP2608AGK-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 150 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=0.5A - - 1.5 Ω VGS=4.5V, ID=0.2A - - 1.8 Ω 0.8 - 2.5 V - 1.4 - S VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA VDS=10V, ID=0.5A gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=120V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=0.5A - 5 8 nC Qgs Gate-Source Charge VDS=75V - 0.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 1.2 - nC td(on) Turn-on Delay Time VDS=75V - 3 - ns tr Rise Time ID=0.5A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω - 12 - ns tf Fall Time VGS=10V - 6 - ns Ciss Input Capacitance VGS=0V - 180 288 pF Coss Output Capacitance VDS=15V - 17 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 13 - pF Rg Gate Resistance f=1.0MHz - 3.3 6.6 Ω Min. Typ. IS=0.9A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=1A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 37 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2608AGK-HF 2.8 2 o 2 10V 7.0V 6.0V 5.0V V G = 4.0V 1.6 ID , Drain Current (A) 2.4 ID , Drain Current (A) o T A = 150 C 10V 7.0V 6.0V 5.0V V G = 4.0V T A = 25 C 1.6 1.2 1.2 0.8 0.8 0.4 0.4 0 0 0 2 4 6 0 8 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.4 I D =0.5A V G =10V I D =1mA Normalized RDS(ON) Normalized BVDSS (V) 2.0 1.1 1 1.6 1.2 0.9 0.8 0.8 0.4 -50 0 50 100 150 -50 0 50 100 150 T j , Junction Temperature ( o C) o T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.6 2 I D =250uA 1.2 T j =150 o C Normalized VGS(th) (V) IS(A) 1.6 T j =25 o C 0.8 1.2 0.8 0.4 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2608AGK-HF f=1.0MHz 300 10 8 200 6 C (pF) VGS , Gate to Source Voltage (V) I D =0.5A V DS =75V C iss 4 100 2 C oss C rss 0 0 0 1 2 3 4 1 5 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) 100us ID (A) 1 Normalized Thermal Response (Rthja) 10 1ms 10ms 100ms 0.1 1s 0.01 DC o T A =25 C Single Pulse 0.001 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 120℃/W Single Pulse 0.01 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4