APM2070P P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -20V/-5A , RDS(ON)=78mΩ(typ.) @ VGS=-10V RDS(ON)=113mΩ(typ.) @ VGS=-4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged G TO-252 Package D Top View of TO-252 Applications • S 5 Power Management in Notebook Computer , / Portable Equipment and Battery Powered Systems. , Ordering and Marking Information P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 °C H a n d lin g C o d e TU : Tube TR : Tape & R eel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rg in a l D e v ic e APM 2070P L e a d F re e C o d e H a n dlin g C o d e Tem p. R ange P ackage C ode A P M 2070P U : A P M 2070P XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±16 * , P-Channel MOSFET ID Maximum Drain Current Continuous -5 IDM Maximum Drain Current Pulsed -20 Unit V A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 1 www.anpec.com.tw APM2070P Absolute Maximum Ratings (Cont.) Symbol PD TJ (TA = 25°C unless otherwise noted) Parameter Maximum Power Dissipation Rating TA=25°C 50 TA=100°C 10 Maximum Junction Temperature TSTG Storage Temperature Range * RθJA Thermal Resistance Junction to Ambient Unit W 150 °C -55 to 150 °C 50 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM2070P Typ. Max. Min. Unit Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current BVDSS IDSS VGS(th) IGSS RDS(ON) VSD = = VGS=0V , IDS=-250µA VDS=VGS , IDS=-250µA VGS=±16V , VDS=0V -0.7 -0.9 -1.5 ±100 V nA VGS=-10V , IDS=-5A 78 102 Resistance VGS=-4.5V , IDS=-2.8A 113 150 Diode Forward Voltage IS=-0.5A , VGS=0V -0.7 -1.3 VDS=-10V , IDS=-5A 17 22 VGS=-4.5V 4 Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Tr Turn-on Delay Time Turn-on Rise Time td(OFF) Turn-off Delay Time mΩ V nC 5.2 VDD=-10V , IDS=-5A , VGEN=-4.5V , RG=6Ω Tf Turn-off Fall Time Ciss Input Capacitance Coss Crss Output Capacitance VDS=-15V Reverse Transfer Capacitance Frequency=1.0MHz b µA Drain-Source On-state Dynamic Qg Total Gate Charge a -1 VDS=-16V , VGS=0V > Notes V -20 VGS=0V 13 36 25 67 45 83 37 69 ns 504 147 118 pF : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 2 www.anpec.com.tw APM2070P Typical Characteristics Output Characteristics 20 Transfer Characteristics 20 -VGS= 5,6,7,8,9,10V -ID-Drain Current (A) 16 -VGS=4V 12 8 -VGS=3V o Tj=25 C 8 o Tj=-55 C 4 4 -VGS=2V 0 o Tj=125 C 12 -ID-Drain Current (A) 16 0 2 4 6 8 0 10 0 1 -VDS - Drain-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω) 1.00 -VGS(th)-Threshold Voltage (V) (Normalized) 1.25 0.50 0.25 -25 0 25 50 75 0.135 -VGS=4.5V 0.120 0.105 0.090 -VGS=10V 0.075 0.060 0.045 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 5 0.150 0.75 4 On-Resistance vs. Drain Current 1.50 0.00 -50 3 -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.75 2 0 4 8 12 16 20 -ID - Drain Current (A) 3 www.anpec.com.tw APM2070P Typical Characteristics (Cont.) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 1.8 RDS(ON)-On-Resistance (Ω) (Normalized) 0.20 0.16 0.12 RDS(ON)-On-Resistance (Ω) -ID= 5A 0.08 0.04 0.00 1 2 3 4 5 6 7 8 9 -VGS = 4.5V -IDS = 5A 1.6 1.4 1.2 1.0 0.24 0.8 0.6 0.4 -50 10 -25 0 Gate Charge 700 -VDS= 10 V -IDS= 5 A Frequency=1MHz Ciss 4 2 480 360 6 240 Coss 120 0 5 10 100 125 150 600 Capacitance (pF) 8 75 Capacitance 10 -VGS-Gate-Source Voltage (V) 50 (°C) TJ - Junction Temperature -VGS - Gate-to-Source Voltage (V) 0 25 15 20 25 30 0 35 QG - Total-Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 Crss 4 8 12 16 20 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM2070P Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 20 10 o Tj=25 C 1 120 o Tj=150 C Power (W) 160 -IS-Source Current (A) 200 80 40 0.1 0.0 0.4 0.8 1.2 0 1E-4 1.6 1E-3 -VSD -Source-to-Drain Voltage (V) 0.01 0.1 1 10 100 Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 0.1 D=0.1 Normalized Effective Transient Thermal Impedance 2 D=0.05 D=0.02 1.Duty Cycle, D= t1/t2 o 2.Per Unit Base=RthJA=50 C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 5 www.anpec.com.tw APM2070P Packaging Information TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 b C e1 Dim L A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 A Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 0. 0 20 6 www.anpec.com.tw APM2070P Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature Convection or IR/ Convection VPR 3°C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 10 °C /second max. 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. 215~ 219°C or 235 +5/-0°C 10 °C /second max. 60 seconds Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM2070P Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 F D 7.5 ± 0.1 1.5 +0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 2 ± 0.5 T1 16.4 + 0.3 -0.2 D1 Po 1.5± 0.25 4.0 ± 0.1 8 T2 P E 2.5± 0.5 W 16+ 0.3 - 0.1 8 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 www.anpec.com.tw APM2070P Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 9 www.anpec.com.tw