APM3095P P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-6A , RDS(ON)=95mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged G TO-252 Package D S Top View of TO-252 S Applications • Power Management in Notebook Computer , G Portable Equipment and Battery Powered Systems. D Ordering and Marking Information APM 3095P Tem p. R ange P a c ka g e C od e A P M 3095P XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol P-Channel MOSFET P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e A P M 3095P U : D (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 ID* Maximum Drain Current – Continuous -12 IDM Maximum Drain Current – Pulsed -30 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 1 www.anpec.com.tw APM3095P Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation TJ (TA = 25°C unless otherwise noted) Rating TA=25°C 50 TA=100°C 20 Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Electrical Characteristics Symbol Parameter W 150 °C -55 to 150 °C 50 °C/W Maximum Junction Temperature TSTG Unit (TA = 25°C unless otherwise noted) Test Condition APM3095P Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa VGS=0V , IDS=-250µA -30 V VDS=-24V , VGS=0V VDS=VGS , IDS=-250µA VGS=±25V , VDS=0V -1 -1.5 -1 µA -2 V nA ±100 Drain-Source On-state VGS=-10V , IDS=-6A 95 110 Resistance VGS=-4.5V , IDS=-3A 140 160 Diode Forward Voltage ISD=-1.25A , VGS=0V -0.7 -1.3 VDS=-15V , IDS=-3A 8 13 mΩ V b Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Tr Turn-on Delay Time Turn-on Rise Time td(OFF) Turn-off Delay Time VGS=-10V VDD=-15V , IDS=-1A , VGEN=-10V , RG=6Ω RL=15Ω Turn-off Fall Time Ciss Input Capacitance Coss Crss Output Capacitance VDS=-25V Reverse Transfer Capacitance Frequency=1.0MHz a b nC 1.1 Tf Notes 1.9 VGS=0V 10 8 20 20 25 50 5 15 ns 550 120 75 pF : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 2 www.anpec.com.tw APM3095P Typical Characteristics Output Characteristics Transfer Characteristics 10 10 -VGS=5,6,7,8,9,10V 8 -ID-Drain Current (A) -ID-Drain Current (A) 8 -V GS=4V 6 4 -V GS=3V 2 0 0 2 4 6 6 4 TJ=125°C TJ=-55°C 2 8 0 10 TJ=25°C 0 1 -VDS - Drain-to-Source Voltage (V) 2 3 4 5 -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.24 1.25 RDS(ON)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250uA 1.00 0.75 0.50 0.25 0.00 -50 0.21 0.18 -V GS=4.5V 0.15 0.12 0.06 0.03 0.00 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 -V GS=10V 0.09 0 1 2 3 4 5 6 7 8 -ID - Drain Current (A) 3 www.anpec.com.tw APM3095P Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 2.00 -ID=3A RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.30 On-Resistance vs. Junction Temperature 0.25 0.20 0.15 0.10 0.05 0.00 1.75 -VGS=10V -ID=6A 1.50 1.25 1.00 0.75 0.50 0.25 0 2 4 6 8 0.00 -50 10 -VGS - Gate-to-Source Voltage (V) -25 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge Capacitance 800 10 -VDS=15V 9 -ID=3A Frequency=1MHz 700 8 Capacitance (pF) -VGS-Gate-Source Voltage (V) 0 7 6 5 4 3 2 Ciss 500 400 300 200 Coss Crss 100 1 0 600 0 1 2 3 4 5 6 7 0 8 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 0 5 10 15 20 25 30 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM3095P Typical Characteristics Source-Drain Diode Forward Voltage Single Pulse Power 250 200 Power (W) -IS-Source Current (A) 10 1 TJ=150°C TJ=25°C 150 100 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1E-3 1.4 0.01 0.1 -VSD -Source-to-Drain Voltage (V) 1 10 100 1000 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 0.1 D=0.02 D=0.01 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A =P DMZ thJA 0.01 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 5 www.anpec.com.tw APM3095P Packaging Information TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 0. 0 20 6 www.anpec.com.tw APM3095P Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature Convection or IR/ Convection VPR 3°C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 10 °C /second max. 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. 215~ 219°C or 235 +5/-0°C 10 °C /second max. 60 seconds Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM3095P Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 F D 7.5 ± 0.1 1.5 +0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 2 ± 0.5 T1 16.4 + 0.3 -0.2 D1 Po 1.5± 0.25 4.0 ± 0.1 8 T2 P E 2.5± 0.5 W 16+ 0.3 - 0.1 8 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 www.anpec.com.tw APM3095P Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 9 www.anpec.com.tw