APM9932CK Dual Enhancement Mode MOSFET (N-and P-Channel) Pin Description Features • N-Channel D D 20V/9A, RDS(ON) =12mΩ(typ.) @ VGS = 4.5V RDS(ON) =18mΩ(typ.) @ VGS = 2.5V • D S1 G1 S2 G2 P-Channel Top View of SOP − 8 -20V/-6A, RDS(ON) =30mΩ(typ.) @ VGS =-4.5V RDS(ON) =50mΩ(typ.) @ VGS =-2.5V • • • D (8) D1 (7) D1 (6) D2 (5) D2 Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (4) G2 (2) G1 Applications • S1 (1) Power Management in Notebook Computer, Portable Equipment and Battery Powered S2 (3) N-P Channel MOSFET Systems Ordering and Marking Information P ackage C ode K : S O P -8 O perating Junction T em p. R ange C : -55 to 150°C H andling C ode T U : T ube T R : T ape & R eel Lead F ree C ode L : Lead F ree D evice B lank : O riginal D evice A PM 9932C Lead F ree C ode H andling C ode T em p. R ange P ackage C ode A PM 9932C K : A PM 9932C XXXXX X X X X X - D ate C ode Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 1 www.anpec.com.tw APM9932CK Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N Channel P Channel VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage ±16 ±12 9 -6 30 -20 1.5 -1.2 ID* Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Power Dissipation RθJA* 9 30 Unit V A A 150 °C -55 to 150 TA=25°C 2 TA=100°C 0.8 Thermal Resistance-Junction to Ambient W °C/W 62.5 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM9932CK Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS RDS(ON) VSD a Gate Leakage Current a Drain-Source On-State Resistance Diode Forward Voltage Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 VGS=0V, IDS=250µA N-Ch 20 VGS=0V, IDS=-250µA P-Ch -20 VDS=16V, VGS=0V N-Ch 1 VDS=-16V, VGS=0V P-Ch -1 VDS=VGS, IDS=250µA N-Ch 0.55 0.7 1.5 VDS=VGS, IDS=-250µA P-Ch -0.45 -0.6 -1 VGS=±16V, VDS=0V N-Ch ±100 VGS=±12V, VDS=0V P-Ch ±100 VGS=4.5V, IDS=9A N-Ch 12 18 VGS=-4.5V, IDS=-6A P-Ch 30 45 VGS=2.5V, IDS=6A N-Ch 18 27 VGS=-2.5V, IDS=-4A P-Ch 50 65 ISD=1.5A, VGS=0V N-Ch 0.75 1.3 ISD=-1.2A, VGS=0V P-Ch -0.8 -1.3 2 V µA V nA mΩ V www.anpec.com.tw APM9932CK Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time Tf APM9932CK Test Condition Min. Typ. Max. Unit b Ciss td(OFF) (TA = 25°C unless otherwise noted) N-Ch 1205 P-Ch 1210 N-Ch 310 P-Channel VGS=0V, VDS=-20V, Frequency=1.0MHz P-Ch 310 N-Ch 210 P-Ch 205 N-Ch 8 15 P-Ch 7 13 N-Ch 10 17 P-Ch 9 16 N-Ch 29 43 P-Ch 27 42 N-Ch 7 11 P-Ch 6 9 N-Channel VDS=10V, VGS=4.5V, IDS=6A N-Ch 14 22 P-Ch 17 25 N-Ch 5 P-Channel VDS=-10V, VGS=-4.5V, IDS=-5A P-Ch 5.2 N-Ch 2.8 P-Ch 3.6 N-Channel VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω Turn-off Delay Time P-Channel VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics N-Channel VGS=0V, VDS=20V, Frequency=1.0MHz pF ns b Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge nC Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 3 www.anpec.com.tw APM9932CK Typical Characteristics N-Channel Drain Current 2.5 10 2.0 8 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 1.5 1.0 0.5 0.0 0 20 40 60 0 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance it im on )L s( 1ms Rd ID - Drain Current (A) 4 2 100 10 6 10ms 1 100ms 1s 0.1 DC O TA=25 C 0.01 0.01 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM9932CK Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 20 30 VGS= 3, 4, 5, 6, 7, 8, 9, 10V 25 RDS(ON) - On - Resistance (Ω) 16 ID - Drain Current (A) 2.5V 12 8 2V 4 0 0 2 4 6 8 10 5 0 5 10 15 20 25 ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage Normalized Threshold Voltage 1.6 16 ID - Drain Current (A) VGS=4.5V VDS - Drain-Source Voltage (V) 20 12 o 8 Tj=125 C o Tj=-55 C 4 0 0.0 15 0 10 VGS=2.5V 20 o Tj=25 C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 IDS=250µΑ 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 4.0 30 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM9932CK Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 1.8 20 VGS = 4.5V IDS = 9A 10 o Tj=150 C 1.4 IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=25 C 1 0.6 o RON@Tj=25 C: 12mΩ 0.4 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.4 10 2000 Frequency=1MHz VDS=10 V VGS - Gate - source Voltage (V) ID = 6 A C - Capacitance (pF) 1600 Ciss 1200 800 0 Coss Crss 400 0 4 8 12 16 6 4 2 0 20 0 5 10 15 20 25 30 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 8 6 www.anpec.com.tw APM9932CK Typical Characteristics (Cont.) P-Channel Power Dissipation Drain Current 2.5 8 -ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 6 4 2 0.5 0.0 0 20 40 60 0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance im it Normalized Transient Thermal Resistance 50 on )L 10 s( 1ms Rd -ID - Drain Current (A) 0 10ms 1 100ms 1s 0.1 DC O TA=25 C 0.01 0.01 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 7 www.anpec.com.tw APM9932CK Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 10 80 VGS= -2.5, -3, -4, -5, -6, -7, -8, -9, -10V 70 RDS(ON) - On - Resistance (Ω) -ID - Drain Current (A) 8 6 -2V 4 2 60 VGS= -2.5V 50 40 VGS= -4.5V 30 20 0 0 2 4 6 10 8 0 2 4 6 8 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 10 10 1.50 Normalized Threshold Voltage IDS= -250µΑ -ID - Drain Current (A) 8 6 o Tj=125 C 4 o 0 0.0 Tj=-55 C o 2 Tj=25 C 0.5 1.0 1.5 2.0 2.5 1.00 0.75 0.50 0.25 0.00 -50 -25 3.0 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 1.25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 8 www.anpec.com.tw APM9932CK Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 10 1.8 VGS = -4.5V IDS = -6A o Tj=150 C 1.4 -IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 1 o Tj=25 C 0.1 0.6 o RON@Tj=25 C: 30mΩ 0.4 -50 -25 0 25 50 75 100 125 150 0.0 0.6 0.8 1.0 1.2 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.4 10 Frequency=1MHz -VGS - Gate - source Voltage (V) VDS= -10V 1600 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 2000 Ciss 1200 800 Coss 400 Crss 0 0.2 0 4 8 12 16 6 4 2 0 20 0 5 10 15 20 25 30 35 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 ID= -5A 8 9 www.anpec.com.tw APM9932CK Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 1. 27B S C 0. 50B S C 8° 8° 10 www.anpec.com.tw APM9932CK Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classificatin Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Large Body Small Body Average ramp-up rate 3°C/second max. (TL to TP) Preheat - Temperature Min (Tsmin) 100°C - Temperature Mix (Tsmax) 150°C - Time (min to max)(ts) 60-120 seconds Tsmax to TL - Ramp-up Rate Tsmax to TL - Temperature(TL) 183°C - Time (tL) 60-150 seconds Peak Temperature(Tp) 225 +0/-5°C 240 +0/-5°C Time within 5°C of actual Peak 10-30 seconds 10-30 seconds Temperature(tp) Ramp-down Rate 6°C/second max. 6 minutes max. Time 25°C to Peak Temperature Pb-Free Assembly Large Body Small Body 3°C/second max. 150°C 200°C 60-180 seconds 3°C/second max 217°C 60-150 seconds 245 +0/-5°C 250 +0/-5°C 10-30 seconds 20-40 seconds 6°C/second max. 8 minutes max. Note: All temperatures refer to topside of the package. Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 11 www.anpec.com.tw APM9932CK Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP-8 A 330±1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 T2 2± 0.2 F D D1 Po P1 Ao 5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 12 www.anpec.com.tw APM9932CK Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 13 www.anpec.com.tw