APM9988CO Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V RDS(ON)=19mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TSSOP − 8 (1) D Applications • (8) D Power Management, Portable Equipment and Battery Powered Systems (4) G1 (5) G2 S1 (2) S1 (3) S2 S2 (6) (7) N-Channel MOSFET Ordering and Marking Information Package Code O : TSSOP-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM9988C Lead Free Code Handling Code Temp. Range Package Code APM9988C O : APM9988C XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 1 www.anpec.com.tw APM9988CO Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±8 Continuous Drain Current IDM* I S* 300µs Pulsed Drain Current Diode Continuous Forward Current TJ Maximum Junction Temperature Storage Temperature Range PD* Maximum Power Dissipation RθJA* V 6 ID* TSTG Unit VGS=4.5V A 20 A 1.4 150 °C -55 to 150 TA=25°C 1.25 TA=100°C 0.5 Thermal Resistance-Junction to Ambient W °C/W 100 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter Test Condition APM9988CO Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=250µA 1 TJ=85°C VDS=VGS, IDS=250µA Gate Leakage Current VGS=±8V, VDS=0V Diode Forward Voltage V VDS=16V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance 20 30 0.5 0.7 µA 1 V ±10 µA VGS=4.5V, IDS=6A 16 20 VGS=2.5V, IDS=5.2A 19 25 ISD=0.5A, VGS=0V 0.7 1.3 16.5 21 mΩ V Gate Charge Characteristics b Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 VDS=10V, VGS=4.5V, IDS=6A 4.5 nC 4.5 2 www.anpec.com.tw APM9988CO Electrical Characteristics (Cont.) Symbol Parameter (T A = 25°C unless otherwise noted) Test Condition APM9988CO Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Turn-off Fall Time trr Reverse Recovery Time Q rr Reverse Recovery Charge Notes: VGS=0V,V DS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, V GEN=4.5V, R G=6Ω ISD =6A, dISD/dt=100A/µs Ω 2 1155 pF 200 90 7 14 10 19 47 86 24 45 ns 25 ns 9 nC a : Pulse test ; pulse width≤300 µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 3 www.anpec.com.tw APM9988CO Typical Characteristics Drain Current Power Dissipation 1.5 8 ID - Drain Current (A) Ptot - Power (W) 1.2 0.9 0.6 6 4 2 0.3 o o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 300µs Rd s(o n) Lim it 10 Normalized Transient Thermal Resistance 100 ID - Drain Current (A) TA=25 C,VG=4.5V 1ms 10ms 1 100ms 0.1 1s DC o T =25 C 0.01 A 0.01 0.1 1 10 Rev. B.1 - Sep., 2005 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 2 Mounted on 1in pad o RθJA : 100 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM9988CO Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 20 24 VGS= 2, 3, 4, 5, 6, 7, 8, 9, 10V 22 RDS(ON) - On - Resistance (mΩ) 18 ID - Drain Current (A) 16 14 12 10 1.5V 8 6 4 VGS=2.5V 20 18 VGS=4.5V 16 14 12 2 0 0.0 10 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 18 20 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 1.6 20 IDS =250µA Normalized Threshold Voltage 18 ID - Drain Current (A) 16 14 12 10 o Tj=125 C 8 o Tj=-55 C o 6 Tj=25 C 4 1.4 1.2 1.0 0.8 0.6 0.4 2 0 0.0 0.4 0.8 1.2 1.6 2.0 0.2 -50 -25 2.4 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM9988CO Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 20 1.6 VGS= 4.5V 10 1.4 IS - Source Current (A) Normalized On Resistance ID = 6A 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 o RON@Tj=25 C: 16mΩ 0.6 -50 -25 0 25 50 0.1 0.2 75 100 125 150 0.6 0.8 1.0 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.2 5 2000 Frequency=1MHz VDS=10V 1750 VGS - Gate - source Voltage (V) IDS= 6A 1500 C - Capacitance (pF) 0.4 1250 Ciss 1000 750 500 Coss 250 4 3 2 1 Crss 0 0 2 4 6 8 0 10 12 14 16 18 20 Rev. B.1 - Sep., 2005 2 4 6 8 10 12 14 16 18 20 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 0 6 www.anpec.com.tw APM9988CO Packaging Information TSSOP-8 e 8 7 2x E/2 E1 ( 2) E GAUGE PLANE S 1 2 e/2 0.25 D L A2 A b Dim A A1 A2 b D e E E1 L L1 R R1 S φ1 φ2 φ3 ( 3) A1 Millimeters Min. Inches Max. 1.2 0.15 1.05 0.30 3.1 0.00 0.80 0.19 2.9 Min. 4.30 0.45 0.026 BSC 0.252 BSC 4.50 0.75 0.169 0.018 1.0 REF 0.09 0.09 0.2 0° Max. 0.047 0.006 0.041 0.012 0.122 0.000 0.031 0.007 0.114 0.65 BSC 6.40 BSC 0.177 0.030 0.039REF 0.004 0.004 0.008 0° 8° 12° REF 12° REF Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 1 (L1) 8° 12° REF 12° REF 7 www.anpec.com.tw APM9988CO Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 8 www.anpec.com.tw APM9988CO Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s 3 3 Package Thickness Volume mm Volume mm <350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 D1 9 Ko www.anpec.com.tw APM9988CO Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application TSSOP-8 A B J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 330 ± 1 2 + 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 F D D1 Po P1 Ao Bo Ko t 5.5 ± 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6 ± 0.3 1.6 ± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application TSSOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 10 www.anpec.com.tw