APT11GF120KR
1200V
Fast IGBT
22A
TO-220
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• Avalanche Rated
• RBSOA and SCSOA Rated
G
C
E
C
G
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT11GF120KR
VCES
Collector-Emitter Voltage
1200
VCGR
Collector-Gate Voltage (RGE = 20KW)
1200
Emitter-Collector Voltage
VGE
Gate-Emitter Voltage
I C1
Continuous Collector Current @ TC = 25°C
22
I C2
Continuous Collector Current @ TC = 110°C
11
±20
I CM1
Pulsed Collector Current
1
@ TC = 25°C
44
I CM2
Pulsed Collector Current
1
@ TC = 110°C
22
EAS
Single Pulse Avalanche Energy
PD
Total Power Dissipation
TJ,TSTG
TL
Volts
15
VEC
UNIT
2
Amps
10
mJ
125
Watts
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
BVCES
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
5.5
6.5
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C)
2.5
3.0
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125°C)
3.1
3.7
1200
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.4mA)
RBVCES
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
-15
4.5
(VCE = VGE, I C = 350µA, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
0.4
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
2.0
±100
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
052-6213 Rev B 12-2000
Symbol
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
APT11GF120KR
3
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
MIN
TYP
MAX
600
800
70
105
f = 1 MHz
38
55
Gate Charge
VGE = 15V
55
Capacitance
VGE = 0V
VCE = 25V
35
VCC = 0.5VCES
I C = I C2
6
Resistive Switching (25°C)
10
VGE = 15V
45
VCC = 0.8VCES
Turn-off Delay Time
I C = I C2
12
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
90
I C = I C2
.45
Eoff
Turn-off Switching Energy
TJ = +150°C
1.00
Ets
Total Switching Losses
tr
td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
mJ
1.45
13
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
12
VGE = 15V
R G = 10W
90
Ets
Total Switching Losses
TJ = +25°C
1.0
gfe
Forward Transconductance
VCE = 20V, I C = I C2
ns
110
I C = I C2
Fall Time
tf
ns
125
R G = 10W
td(on)
ns
13
Turn-on Switching Energy
Eon
nC
110
RG = 10W
VGE = 15V
Fall Time
pF
55
Turn-on Delay Time
Rise Time
UNIT
mJ
4.7
S
THERMAL CHARACTERISTICS
Symbol
RQJC
Junction to Case
RQJA
Junction to Ambient
Torque
052-6213 Rev B 12-2000
Characteristic
MIN
TYP
MAX
UNIT
1.00
°C/W
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = 15A, RGE = 25W, L = 300µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
80
10
lb•in