APT30GP60BD1
600V
POWER MOS 7 IGBT
®
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for very
fast switching, making it ideal for high frequency, high voltage switch-mode
power supplies and tail current sensitive applications. In many cases, the
POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET.
TO-247
G
• Low Conduction Loss
• 100 kHz operation @ 400V, 41A
• Low Gate Charge
• 200 kHz operation @ 400V, 26A
• Ultrafast Tail Current shutoff
• SSOA rated
MAXIMUM RATINGS
Symbol
C
C
E
G
E
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30GP60BD1
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±20
Gate-Emitter Voltage Transient
±30
I C1
Continuous Collector Current @ TC = 25°C
100
I C2
Continuous Collector Current @ TC = 110°C
49
I CM
Pulsed Collector Current
VGEM
SSOA
PD
TJ,TSTG
TL
1
UNIT
Volts
Amps
120
@ TC = 25°C
120A @ 600V
Switching Safe Operating Area @ TJ = 150°C
Watts
462
Total Power Dissipation
-55 to 150
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
TYP
MAX
4.5
6
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C)
2.6
2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C)
2.4
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
I GES
3
(VCE = VGE, I C = 1mA, Tj = 25°C)
2
400
2
Gate-Emitter Leakage Current (VGE = ±20V)
UNIT
Volts
µA
3000
±100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
Rev - 6-2002
Characteristic / Test Conditions
050-7401
Symbol
APT30GP60BD1
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Qge
Qgc
SSOA
Total Gate Charge
TYP
Capacitance
3060
VGE = 0V, VCE = 25V
290
f = 1 MHz
10
Gate Charge
VGE = 15V
7
85
VCE = 300V
20
I C = 30A
27
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching SOA
MIN
TJ = 150°C, R G = 5Ω, VGE =
MAX
UNIT
pF
V
nC
120
A
15V, L = 100µH,VCE = 600V
td(on)
tr
td(off)
tf
Turn-on Delay Time
Current Rise Time
Eoff
Turn-off Switching Energy
td(on)
Turn-on Delay Time
Eon2
Eoff
I C = 30A
32
4
Turn-on Switching Energy (Diode) 5
Eon1
38
µJ
156
11
VGE = 15V
60
I C = 30A
69
Current Fall Time
Turn-off Switching Energy
406
Inductive Switching (125°C)
VCC(Peak) = 400V
Turn-off Delay Time
19
R G = 5Ω
4
Turn-on Switching Energy (Diode)
ns
230
TJ = +25°C
6
Current Rise Time
Turn-on Switching Energy
20
R G = 5Ω
Eon2
tf
VGE = 15V
Current Fall Time
Turn-on Switching Energy
td(off)
11
Turn-off Delay Time
Eon1
tr
Inductive Switching (25°C)
VCC(Peak) = 400V
230
TJ = +125°C
5
ns
600
6
µJ
314
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RΘJC
Junction to Case (IGBT)
.27
RΘJC
Junction to Case (DIODE)
2.0
WT
5.90
Package Weight
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy. (See Figures 21, 23.)
050-7401
Rev - 6-2002
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
TYPICAL PREFORMANCE CURVES
APT30GP60BD1
50
50
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
45
IC, COLLECTOR CURRENT (A)
40
35
TC=-55°C
30
TC=125°C
25
TC=25°C
20
15
10
TJ = -55°C
60
40
TJ = 125°C
TJ = 25°C
20
15
10
FIGURE 2, Output Characteristics (VGE = 10V)
16
VCE=120V
12
VCE=300V
10
8
VCE=480V
6
4
2
1
2 3
4 5 6
7 8 9 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
4
IC= 60A
3
IC= 30A
IC= 15A
2
1
0
6
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
3.5
2.5
0.85
0.8
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
0.90
IC= 30A
IC=15A
1.5
1
0.5
0
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TRMPERATURE (°C)
FIGURE 6, On State Voltage vs Junction Temperature
120
0.95
IC= 60A
2
1.15
1.0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3
140
1.05
20 30 40 50 60 70 80 90 100
GATE CHARGE (nC)
FIGURE 4, Gate Charge
4
1.2
1.10
10
100
80
60
40
20
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
Rev - 6-2002
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
6
IC = 30A
TJ = 25°C
14
0
0
7
TC=25°C
20
0
1
2
3
4
5
6
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
80
TC=-55°C
25
0
100
TC=125°C
30
5
250µs PULSE TEST
<0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
35
0
FIGURE 1, Output Characteristics(VGE = 15V)
120
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
40
5
0
1
2
3
4
5
6
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
050-7401
IC, COLLECTOR CURRENT (A)
45
APT30GP60BD1
80
20
VGE= 10V
15
VGE= 15V
10
VCE = 400V
TJ = 25°C, TJ =125°C
RG = 5Ω
L = 100 µH
5
0
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
25
70
VCE = 400V
RG = 5Ω
L = 100 µH
VGE =15V,TJ=125°C
60
50
VGE =15V,TJ=25°C
40
VGE =10V,TJ=125°C
30
VGE =10V,TJ=25°C
20
10
0
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
70
R = 5Ω, L = 100µH, VCE = 400V
G
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
RG = 5Ω, L = 100µH, VCE = 400V
TJ = 25°C,VGE = 10V
60
TJ = 125°C,VGE = 10V
40
TJ = 25°C,VGE = 15V
30
TJ = 125°C,VGE =15V
20
tf, FALL TIME (ns)
tr, RISE TIME (ns)
80
50
40
20
10
0
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
TJ = 125°C,VGE =15V
1500
TJ = 125°C,VGE =10V
1000
TJ = 25°C,VGE =10V
500
TJ = 25°C,VGE =15V
SWITCHING ENERGY LOSSES (µJ)
0
EOFF, TURN OFF ENERGY LOSS (µJ)
1000
VCE = 400V
VGE = +15V
RG = 5 Ω
VCE = 400V
VGE = +15V
RG = 5 Ω
800
TJ = 125°C, VGE = 10V or 15V
600 TJ = 25°C, VGE = 10V or 15V
400
200
0
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
2500
2000
VCE = 400V
VGE = +15V
RG = 5 Ω
Eon2, 60A
2000
1500
Eoff, 60A
1000
Eon2, 30A
Eoff, 30A
500
Eon2, 15A
Eoff, 15A
0
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
2000
Rev - 6-2002
TJ = 25°C, VGE = 10V or 15V
0
10 15 20 25 30 35 40 45 50 55 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
050-7401
TJ = 125°C, VGE = 10V or 15V
60
VCE = 400V
VGE = +15V
RG = 5 Ω
Eon2,60A
1500
1000
Eoff,60A
Eon2,30A
500
Eoff, 30A
Eon2,15A
0
-50
Eoff, 15A
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PREFORMANCE CURVES
APT30GP60BD1
140
10,000
Cies
120
1,000
500
Coes
100
50
Cres
10
5
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
IC, COLLECTOR CURRENT (A)
P
C, CAPACITANCE ( F)
5,000
100
80
60
40
20
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.01
0.005
PDM
0.02
t1
0.01
t2
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
350
100
Fmax = min(f max1 , f max 2 )
50
0.05
t d(on ) + t r + t d(off ) + t f
f max 2 =
Pdiss − Pcond
E on 2 + E off
Pdiss =
TJ − TC
R θJC
15
20
30
40
50 60
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
Rev - 6-2002
10
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 5 Ω
f max1 =
050-7401
10-5
FMAX, OPERATING FREQUENCY (kHz)
ZθJC, THERMAL IMPEDANCE (°C/W)
0.30
APT30GP60BD1
APT 30GP60BD1
Gate Voltage
10 %
18V
TJ = 125 C
td(on)
V CE
IC
V CC
tr
Collector Current
90%
A
D.U.T.
5%
5%
10%
Collector Voltage
Figure 21, Inductive Switching Test Circuit
Switching Energy
Figure 22, Turn-on Switching Waveforms and Definitions
90%
VTEST
Gate Voltage
*DRIVER SAME TYPE AS D.U.T.
TJ = 125 C
Collector Voltage
td(off)
A
tf
V CE
90%
IC
100uH
V CLAMP
10%
0
Collector Current
Switching Energy
050-7401
Rev - 6-2002
Figure 23, Turn-off Switching Waveforms and Definitions
B
A
DRIVER*
Figure 24, EON1 Test Circuit
D.U.T.
APT30GP60BD1
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM
All Ratings: TC = 25°C unless otherwise specified.
APT30GP60BD1
Characteristic / Test Conditions
Maximum Average Forward Current (TC = 90°C, Duty Cycle = 0.5)
15
RMS Forward Current
25
UNIT
Amps
110
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
Maximum Forward Voltage
MIN
TYP
IF = 30A
2.7
IF = 15A, TJ = 125°C
1.7
IF = 30A, TJ = 125°C
2.2
MAX
UNIT
Volts
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Collector
(Cathode)
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
Rev - 6-2002
Gate
Collector
(Cathode)
Emitter
(Anode)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
050-7401
0.40 (.016)
0.79 (.031)