APT13GP120BD1
1200V
®
POWER MOS 7 IGBT
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for very
fast switching, making it ideal for high frequency, high voltage switch-mode
power supplies and tail current sensitive applications. In many cases, the
POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET.
TO-247
G
• Low Conduction Loss
• 100 kHz operation @ 800V, 7A
• Low Gate Charge
• 50 kHz operation @ 800V, 12A
• Ultrafast Tail Current shutoff
• RBSOA Rated
C
E
C
G
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT13GP120BD1
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±20
Gate-Emitter Voltage Transient
±30
VGEM
I C1
Continuous Collector Current @ TC = 25°C
43
I C2
Continuous Collector Current @ TC = 110°C
21
I CM
Pulsed Collector Current
RBSOA
PD
TJ,TSTG
TL
1
UNIT
Volts
Amps
84
@ TC = 25°C
84A @ 960V
Reverse Bias Safe Operating Area @ TJ = 150°C
Watts
290
Total Power Dissipation
-55 to 150
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
TYP
MAX
4.5
6
Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25°C)
3.6
3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125°C)
3.1
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
3
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
I GES
1200
500
2
Gate-Emitter Leakage Current (VGE = ±20V)
µA
3000
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Volts
nA
Rev A 7-2002
BVCES
UNIT
050-7414
Symbol
APT13GP120BD1
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
1093
VGE = 0V, VCE = 25V
133
Reverse Transfer Capacitance
f = 1 MHz
35
Gate-to-Emitter Plateau Voltage
Gate Charge
VGE = 15V
8
65
VCE = 600V
7
I C = 13A
32
Input Capacitance
Coes
Output Capacitance
Cres
VGEP
Qge
Qgc
RBSOA
TYP
Capacitance
Cies
Qg
MIN
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Reverse Bias Safe Operating Area
TJ = 150°C, R G = 5Ω, VGE =
MAX
UNIT
pF
V
nC
84
A
15V, L = 100µH,VCE = 960V
td(on)
tr
td(off)
tf
Turn-on Delay Time
Current Rise Time
Eoff
Turn-off Switching Energy
td(on)
Turn-on Delay Time
Eon2
Eoff
89
4
Turn-on Switching Energy (Diode) 5
Eon1
I C = 13A
R G = 5Ω
Eon2
tf
35
Current Fall Time
Turn-on Switching Energy
td(off)
23
VGE = 15V
Turn-off Delay Time
Eon1
tr
8
Inductive Switching (25°C)
VCC = 800V
340
TJ = +25°C
892
6
8
23
VGE = 15V
58
Current Fall Time
I C = 13A
157
Turn-on Switching Energy
R G = 5Ω
Current Rise Time
Turn-off Delay Time
Turn-off Switching Energy
µJ
332
Inductive Switching (125°C)
VCC = 800V
4
Turn-on Switching Energy (Diode)
ns
384
TJ = +125°C
5
ns
1262
6
µJ
715
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RΘJC
Junction to Case (IGBT)
.43
RΘJC
Junction to Case (DIODE)
1.7
WT
6.10
Package Weight
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy. (See Figures 21, 23.)
050-7414
Rev A 7-2002
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
TYPICAL PERFORMANCE CURVES
APT13GP120BD1
100
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
80
70
60
50
40
30
20 TC=125°C
10
30
20 T =125°C
C
10
TC=25°C
0
FIGURE 1, Output Characteristics(VGE = 15V)
80
FIGURE 2, Output Characteristics (VGE = 10V)
16
TJ = -55°C
60
50
40
30
20
TJ = 25°C
10
VCE=240V
VCE=600V
10
8
VCE=960V
6
4
2
1
4
IC= 13A
3.5
IC= 6.5A
3
2.5
2
1.5
1
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
0
1.05
1.0
0.95
0.90
0.85
0.8
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
1.10
20
30
40
50
GATE CHARGE (nC)
FIGURE 4, Gate Charge
60
70
5
4.5
4
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC= 26A
IC= 13A
3.5
3
IC=6.5A
2.5
2
1.5
1
0.5
0
-25
0
25
50
75
100
125
TJ, JUNCTION TRMPERATURE (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
1.2
1.15
10
50
40
30
20
10
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
Rev A 7-2002
IC= 26A
4.5
0
IC = 13A
TJ = 25°C
12
2 3
4 5 6
7 8 9 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
0.5
14
0
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
TJ = 125°C
VGE, GATE-TO-EMITTER VOLTAGE (V)
0 1
2
3 4 5
6 7
8 9 10
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
70
IC, COLLECTOR CURRENT (A)
40
0 1
2 3
4 5 6
7 8 9 10
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250µs PULSE TEST
<0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
50
TC=25°C
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
60
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
050-7414
IC, COLLECTOR CURRENT (A)
90
70
APT13GP120BD1
70
VGE= 10V
15
10
VGE= 15V
5
0
VCE = 800V
TJ = 25°C, TJ =125°C
RG = 5Ω
L = 100 µH
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
20
VGE =15V,TJ=125°C
60
50
40 V =10V,T =125°C
J
GE
VGE =10V,TJ=25°C
30
20
10
VGE =15V,TJ=25°C
VCE = 800V
RG = 5Ω
L = 100 µH
0
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
70
TJ = 25 or 125°C,VGE = 10V
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
200
RG = 5Ω, L = 100µH, VCE = 800V
180
60
tf, FALL TIME (ns)
tr, RISE TIME (ns)
160
50
40
30
20
TJ = 25 or 125°C,VGE = 15V
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
SWITCHING ENERGY LOSSES (µJ)
Rev A 7-2002
5
10
18
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
TJ = 25°C,VGE =10V
500
TJ = 25°C,VGE =15V
EOFF, TURN OFF ENERGY LOSS (µJ)
1500
1600
1400
VCE = 800V
VGE = +15V
RG = 5 Ω
TJ = 125°C, VGE = 10V or 15V
1200
1000
TJ = 25°C, VGE = 10V or 15V
800
600
400
200
0
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
3500
3000
VCE = 800V
VGE = +15V
RG = 5 Ω
3000
Eon2, 26A
2500
Eoff, 26A
2000
Eon2, 13A
1500
1000
Eoff, 13A
Eon2, 6.5A
500
Eoff, 6.5A
0
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
TJ = 125°C,VGE =10V
0
050-7414
TJ = 125°C,VGE =15V
1000
TJ = 25°C, VGE = 10V or 15V
60
1800
VCE = 800V
VGE = +15V
RG = 5 Ω
2000
80
0
5
2500
100
20
R = 5Ω, L = 100µH, VCE = 800V
G
3000
120
40
10
0
TJ = 125°C, VGE = 10V or 15V
140
2500
VCE = 800V
VGE = +15V
RG = 5 Ω
Eon2,26A
2000
1500
Eoff,26A
Eon2,13A
1000
500 Eon2,6.5A
Eoff, 13A
Eoff, 6.5A
0
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT13GP120BD1
100
10,000
5,000
1,000
500
Coes
100
Cres
10
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
IC, COLLECTOR CURRENT (A)
P
C, CAPACITANCE ( F)
80
Cies
60
40
20
0
0
200
400
600
800
1000
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.45
0.1
0.2
0.05
0.1
0.05
0.02
Note:
PDM
0.01
0.01
0.005
t1
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
140
100
50
Fmax = min(f max1 , f max 2 )
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 5 Ω
10
f max1 =
0.05
t d(on ) + t r + t d(off ) + t f
f max 2 =
Pdiss − Pcond
E on 2 + E off
Pdiss =
TJ − TC
R θJC
10
15
20
25
30
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
Rev A 7-2002
5
050-7414
10-5
FMAX, OPERATING FREQUENCY (kHz)
ZθJC, THERMAL IMPEDANCE (°C/W)
D=0.5
APT13GP120BD1
APT 13GP120BD1
Gate Voltage
10 %
18V
V CE
IC
V CC
T J = 125 C
td(on)
tr
Collector Current
90%
A
5%
D.U.T.
5%
Collector Voltage
10%
Figure 21, Inductive Switching Test Circuit
Switching Energy
90%
Figure 22, Turn-on Switching Waveforms and Definitions
Gate Voltage
TJ = 125 C
td(off)
VTEST
tf
*DRIVER SAME TYPE AS D.U.T.
90%
Collector Voltage
A
0
V CE
Collector Current
10%
IC
100uH
Switching Energy
V CLAMP
B
A
DRIVER*
050-7414
Rev A 7-2002
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
D.U.T.
APT13GP120BD1
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM
All Ratings: TC = 25°C unless otherwise specified.
APT13GP120BD1
Characteristic / Test Conditions
Maximum Average Forward Current (TC = 90°C, Duty Cycle = 0.5)
15
RMS Forward Current
29
UNIT
Amps
110
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
MIN
Maximum Forward Voltage
TYP
IF = 13A
2.5
IF = 30A, TJ = 125°C
2.5
IF = 13A, TJ = 125°C
2.2
MAX
UNIT
Volts
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Collector
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Rev A 7-2002
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
050-7414
0.40 (.016)
0.79 (.031)