APT53N60BC6
APT53N60SC6
600V
COOLMOS
53A 0.070Ω
Super Junction MOSFET
Power Semiconductors
TO
• Ultra Low RDS(ON)
-2
47
D3PAK
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
D
• Popular TO-247 or Surface Mount D3 package.
G
S
All Ratings per die: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
APT53N60B_SC6
UNIT
Drain-Source Voltage
600
Volts
Continuous Drain Current @ TC = 25°C
53
Continuous Drain Current @ TC = 100°C
34
1
Amps
159
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
Volts
PD
Total Power Dissipation @ TC = 25°C
417
Watts
TJ,TSTG
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
- 55 to 150
°C
260
2
9.3
2
Amps
1.72
( Id =9.3A, Vdd = 50V )
mJ
1135
( Id = 9.3A, Vdd = 50V )
STATIC ELECTRICAL CHARACTERISTICS
BV(DSS)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
MIN
3
TYP
MAX
600
UNIT
Volts
0.070
(VGS = 10V, ID = 25.8A)
Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
nA
3.5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1.72mA)
2.5
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
μA
8-2010
Characteristic / Test Conditions
050-7206 Rev B
Symbol
DYNAMIC CHARACTERISTICS
APT53N60B_SC6
Symbol Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
3545
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
5
5
pF
154
26
nC
82
14
INDUCTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 53A @ 125°C
RG = 4.3Ω
Eon
UNIT
330
VGS = 10V
VDD = 300V
ID = 53A @ 25°C
Fall Time
MAX
4020
4
Turn-off Delay Time
tf
TYP
VGS = 0V
VDS = 25V
f = 1 MHz
Rise Time
td(off)
MIN
36
ns
151
74
960
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 53A, RG = 4.3Ω
873
μJ
1478
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID = 53A, RG = 4.3Ω
995
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
IS
Continuous Source Current (Body Diode)
46
ISM
Pulsed Source Current
159
VSD
Diode Forward Voltage
1
(Body Diode)
3
(VGS = 0V, IS = -53A)
0.9
UNIT
Amps
1.2
Volts
15
V/ns
/dt
Peak Diode Recovery dv/dt
t rr
Reverse Recovery Time
(IS = -53A, di/dt = 100A/μs)
Tj = 25°C
795
ns
Q rr
Reverse Recovery Charge
(IS = -53A, di/dt = 100A/μs)
Tj = 25°C
25
μC
IRRM
Peak Recovery Current
(IS = -53A, di/dt = 100A/μs)
Tj = 25°C
58
Amps
dv
6
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
UNIT
0.30
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction temperature
4 See MIL-STD-750 Method 3471
2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery.
PAV = EAR*f . Pulse width tp limited by Tj max.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
D = 0.9
0.30
0.25
0.7
0.20
0.5
Note:
0.15
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
050-7206 Rev B
8-2010
0.35
0.3
0.10
t1
t2
0.05
0
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
SINGLE PULSE
0.05
10-5
10-4
10-3
10-2
0.1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1
APT53N60B_SC6
Typical Performance Curves
140
80
15V
70
6.5V
80
6.0V
60
5.5V
40
5V
20
50
40
30
20
4.5V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
3.00
GS
2.50
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
50
VGS = 10V
1.50
VGS = 20V
1.00
0.50
40
30
20
10
0
30
60
90
120
0
150
50
75
100
125
150
TC, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
2.50
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
1.20
1.15
1.10
1.05
1.00
0.95
25
2.00
1.50
1.00
0.50
0
0.90
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
0
25
50 75 100 125 150
TJ, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
-50
-25
1.20
1000
1.15
1.00
0.95
0.90
0.85
0.80
100
10
10ms
100µs
1ms
100ms
1
0.75
0.70
-50
0
50
100
150
TC, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
0.1
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
8-2010
1.05
050-7206 Rev B
1.10
ID, DRAIN CURRENT (A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
0
= 10V @ 26.5A
2.00
0
TJ= -55°C
TJ= 125°C
60
NORMALIZED TO
V
TJ= 25°C
10
RDS(ON), DRAIN-TO-SOURCE ON
RESISTANCE (NORMALIZED)
RDS(on), DRAIN-TO-SOURCE ON RESISTANCE
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
60
ID, DRAIN CURRENT (A)
7.0V
100
ID, DRAIN CURRENT (A)
IC, DRAIN CURRENT (A)
120
0
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
10V
Typical Performance Curves
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10,000
C, CAPACITANCE (pF)
Ciss
1000
Coss
100
Crss
10
0
0
100
200
300
400
500
600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
IDR, REVERSE DRAIN CURRENT (A)
I = 53A
D
12
VDS= 120V
10
VDS= 300V
8
VDS= 480V
6
4
2
0
0
20
40 60 80 100 120 140 160 180 200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
200
200
td(off)
175
100
td(on) and td(off) (ns)
TJ= +150°C
TJ = =25°C
10
150
125
V
DD
R
100
G
= 400V
= 4.3 Ω
T = 125°C
J
L = 100μH
75
50
td(on)
25
1
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
20
V
00
G
20
40 50 60 70
80
ID (A)
FIGURE 13, Delay Times vs Current
V
3150
= 4.3Ω
T = 125°C
J
L = 100μH
SWITCHING ENERGY (μJ)
R
10
30
90
3500
= 400V
DD
tf
80
tr, and tf (ns)
APT53N60B_SC6
14
12,000
60
tr
40
DD
R
G
= 400V
= 4.3Ω
T = 125°C
2800
J
Eon
L = 100μH
2450
EON includes
diode reverse recovery.
2100
1750
Eoff
1400
1050
700
20
350
0
0
10
50 60 70 80
90
ID (A)
FIGURE 14 , Rise and Fall Times vs Current
3500
20
V
DD
30
40
= 400V
I = 53A
050-7206 Rev B
SWITCHING ENERGY (uJ)
8-2010
D
Eoff
T = 125°C
J
L = 100μH
3000
EON includes
diode reverse recovery.
2500
Eon
2000
1500
1000
0
10
20
30
40
50
RG, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
10
20
30
40
50
60
70
80
ID (A)
FIGURE 15, Switching Energy vs Current
APT53N60B_SC6
Typical Performance Curves
Gate Voltage
10%
90%
90%
Gate Voltage
td(off)
TJ = 125°C
td(on)
TJ = 125°C
tf
Collector Current
Collector Voltage
tr
5%
10%
5%
10%
0
Collector Voltage
Collector Current
Switching Energy
Switching Energy
Figure 17, Turn-on Switching Waveforms and Definitions
Figure 18, Turn-off Switching Waveforms and Definitions
APT30DQ60
APT30DF60
IC
V DD
V CE
G
D.U.T.
Figure
19,20,
Inductive
Switching
Test
Circuit
Figure
Inductive
Switching
Test
Circuit
3
D PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
8-2010
4.50 (.177) Max.
050-7206 Rev B
0.46 (.018)
0.56 (.022) {3 Plcs}