APT55M65L2FLL
550V 78A 0.065W
POWER MOS 7TM
FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Increased Power Dissipation
• Easier To Drive
• Lower Gate Charge, Qg
• Popular TO-264 MAX Package
MAXIMUM RATINGS
Symbol
VDSS
ID
TO-264
Max
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT55M65L2FLL
UNIT
550
Volts
Drain-Source Voltage
L
A
C
I
N
H
C
N
E
T
IO
E
T
C MA
N
A OR
V
AD INF
78
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
893
Watts
Linear Derating Factor
7.14
W/°C
VGSM
PD
TJ,TSTG
312
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
°C
300
78
(Repetitive and Non-Repetitive)
1
Amps
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
550
Volts
78
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.065
UNIT
Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
050-7225 Rev - 4-2002
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT55M65L2FLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
9710
Coss
Output Capacitance
VDS = 25V
1870
Reverse Transfer Capacitance
f = 1 MHz
130
VGS = 10V
233
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
58
105
VGS = 15V
23
Crss
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
t d(on)
tr
t d(off)
tf
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
Turn-on Delay Time
VDD = 0.5 VDSS
20
ID = ID [Cont.] @ 25°C
55
RG =0.6Ω
8
Rise Time
Turn-off Delay Time
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
TYP
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
dt
MIN
Peak Diode Recovery
dv/
(Body Diode)
dt
(VGS = 0V, IS = -ID [Cont.])
5
MAX
78
312
UNIT
Amps
1.3
Volts
15
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
2.6
Tj = 125°C
10
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
17
Tj = 125°C
34
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
UNIT
0.14
40
1 Repetitive Rating: Pulse width limited by maximum junction
TO-264 MAXTM(L2) Package Outline
APT Reserves the right to change,
without notice, the specifications
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
and information contained herein.
19.51 (.768)
20.50 (.807)
Drain
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.05mH, R = 25Ω, Peak I = 78A
j
G
L
5 dv/ numbers reflect the limitations of the test circuit rather than the
dt
device itself. IS ≤ -ID Cont. di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
[
]
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
050-7225 Rev - 4-2002
MAX
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058