APTCV40H60CT1G Full - Bridge CoolMOS & Trench + Field Stop® IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS™ Q2, Q4: VDSS = 600V ; ID = 36A @ Tc = 25°C Application 3 4 • Solar converter Features Q3 Q1 CR1 5 2 CR3 6 1 Q2 Q4 7 9 8 11 10 NTC 12 Top switches : Trench + Field Stop IGBT® Bottom switches : CoolMOS™ • Q2, Q4 CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged - Fast intrinsic diode • Q1, Q3 Trench & Field Stop IGBT® - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current • - SiC Schottky Diode (CR1, CR3) Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF • Very low stray inductance • Internal thermistor for temperature monitoring • High level of integration Pins 3/4 must be shorted together • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com All ratings @ Tj = 25°C unless otherwise specified www.microsemi.com 1 - 10 APTCV50H60CT1G – Rev 0 • November, 2007 Benefits APTCV40H60CT1G 1. Top switches 1.1 Top Trench + Field Stop IGBT® characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A V W Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 3150 200 95 pF Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 110 45 200 40 ns Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 50A Tj = 25°C RG = 8.2Ω Tj = 150°C Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance 120 50 250 ns 60 0.3 0.43 1.35 1.75 mJ mJ 0.85 www.microsemi.com °C/W 2 - 10 November, 2007 Test Conditions APTCV50H60CT1G – Rev 0 Symbol Characteristic APTCV40H60CT1G 1.2 Top SiC diode characteristics (CR1, CR3) Symbol Characteristic VRRM Test Conditions Min IRM Maximum Reverse Leakage Current VR=600V Tj = 25°C Tj = 125°C IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 100°C IF = 10A Tj = 25°C Tj = 175°C Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance RthJC Max 50 100 10 1.6 2 200 1000 600 Maximum Peak Repetitive Reverse Voltage VF Typ Unit V IF = 10A, VR = 300V di/dt =500A/µs 14 f = 1MHz, VR = 200V 65 f = 1MHz, VR = 400V 50 Junction to Case Thermal resistance µA A 1.8 2.4 V nC pF 2.5 °C/W 2. Bottom switches 2.1 Bottom CoolMOS™ characteristics Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Max ratings 600 36 27 115 ±20 83 250 20 1 1800 Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Unit V A V mΩ W A mJ Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V www.microsemi.com Typ 3 4 Max 100 5000 83 5 100 Unit µA mΩ V nA November, 2007 IDSS Test Conditions 3 - 10 APTCV50H60CT1G – Rev 0 Symbol Characteristic APTCV40H60CT1G Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Crss Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Typ 7.2 0.041 Max Unit nF 250 VGS = 10V VBus = 300V ID = 36A nC 43 135 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 36A RG = 5Ω 30 ns 240 52 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 36A ; RG = 5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 36A ; RG = 5Ω 531 µJ 590 762 µJ 725 0.5 °C/W Max Unit Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 36 27 VGS = 0V, IS = - 36A IS = - 36A VR = 350V diS/dt = 100A/µs A 1.2 40 Tj = 25°C Tj = 125°C Tj = 25°C 210 350 2 Tj = 125°C 5.4 V V/ns ns µC www.microsemi.com 4 - 10 APTCV50H60CT1G – Rev 0 November, 2007 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 36A di/dt ≤ 100A/µs VR ≤ VDSS Tj ≤ 150°C APTCV40H60CT1G 3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K Min 2500 -40 -40 -40 2.5 Typ Max Unit V R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ 4. Package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 150* 125 100 4.7 80 °C N.m g Tj=175°C for Trench & Field Stop IGBT See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 5 - 10 APTCV50H60CT1G – Rev 0 November, 2007 5. SP1 Package outline (dimensions in mm) APTCV40H60CT1G 6. Top switches curves 6.1 Top Trench + Field Stop IGBT® typical performance curves Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C 80 TJ = 150°C TJ=125°C 60 IC (A) IC (A) VGE=13V TJ=150°C 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 3.5 60 E (mJ) IC (A) 2.5 40 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V 80 TJ=125°C Eoff 2 1.5 1 TJ=150°C 20 TJ=25°C 0 0 5 6 7 Eon 0.5 8 9 10 11 0 12 20 40 VGE (V) Switching Energy Losses vs Gate Resistance 80 100 Reverse Bias Safe Operating Area 3 125 2.5 Eoff 100 IC (A) 2 E (mJ) 60 IC (A) 1.5 0.5 50 VCE = 300V VGE =15V IC = 50A TJ = 150°C 1 Eon 75 VGE=15V TJ=150°C RG=8.2Ω 25 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.6 0.9 0.7 0.2 November, 2007 0.5 0.4 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6 - 10 APTCV50H60CT1G – Rev 0 Thermal Impedance (°C/W) 1 APTCV40H60CT1G 6.2 Top SiC diode typical performance curves Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 3 2.5 0.9 2 0.7 1.5 0.5 1 0.3 0.1 0.5 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 200 TJ=25°C 15 TJ=75°C IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 20 TJ=175°C 10 TJ=125°C 5 0 0 0.5 1 1.5 2 2.5 3 3.5 TJ=175°C 160 TJ=125°C 120 TJ=75°C 80 TJ=25°C 40 0 200 300 400 500 600 700 800 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage 400 300 250 200 150 100 50 0 10 100 VR Reverse Voltage 1000 November, 2007 1 www.microsemi.com 7 - 10 APTCV50H60CT1G – Rev 0 C, Capacitance (pF) 350 APTCV40H60CT1G 7. Bottom switches curves 7.1 Bottom CoolMOS™ typical performance curves Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 80 VGS=15&10V 50 ID, Drain Current (A) 6.5V 40 30 6V 20 5.5V 10 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 60 40 TJ=125°C 20 TJ=125°C TJ=25°C 0 0 0 1 2 3 4 5 6 0 Normalized to VGS=10V @ 18A 1.15 VGS=10V 1.1 1.05 1 2 4 6 8 VGS, Gate to Source Voltage (V) 10 DC Drain Current vs Case Temperature 40 RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) VGS=20V 0.95 0.9 30 20 10 0 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) November, 2007 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 150 8 - 10 APTCV50H60CT1G – Rev 0 ID, Drain Current (A) 60 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 0.95 ID, Drain Current (A) 0.90 0.85 0.80 0.75 100 10 0.70 100 µs limited by RDSon Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 25 50 75 100 125 150 1 Ciss Coss 100 Crss 10 1 0 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 1000 100 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 10000 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 14 ID=36A TJ=25°C 12 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 November, 2007 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.00 C, Capacitance (pF) VGS=10V ID= 18A 2.5 9 - 10 APTCV50H60CT1G – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTCV40H60CT1G APTCV40H60CT1G Delay Times vs Current 300 VDS=400V RG=5Ω TJ=125°C L=100µH td(off) 250 60 200 tr and tf (ns) VDS=400V RG=5Ω TJ=125°C L=100µH 150 100 40 tr 20 50 td(on) 0 0 0 10 20 30 40 50 60 0 10 20 ID, Drain Current (A) 1 Eoff 0.8 Eon 0.6 50 60 Switching Energy vs Gate Resistance Switching Energy (mJ) 0.4 0.2 0 VDS=400V ID=36A TJ=125°C L=100µH 3 Eoff 2 Eon 1 0 0 10 20 30 40 50 ID, Drain Current (A) 60 0 IDR, Reverse Drain Current (A) ZCS ZVS 80 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 40 0 5 10 hard switching 15 20 25 30 ID, Drain Current (A) 30 40 50 Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 120 20 Gate Resistance (Ohms) 200 160 10 35 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) November, 2007 Switching Energy (mJ) 1.2 40 4 VDS=400V RG=5Ω TJ=125°C L=100µH 1.4 30 ID, Drain Current (A) Switching Energy vs Current 1.6 Frequency (kHz) tf Microsemi reserves the right to change, without notice, the specifications and information contained herein “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 10 - 10 APTCV50H60CT1G – Rev 0 td(on) and td(off) (ns) Rise and Fall times vs Current 80