APTC60DAM24CT1G Boost chopper Super Junction MOSFET Power Module 5 6 11 CR1 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • 3 4 Q2 - NTC 9 10 • 1 2 - 12 • • • Pins 1/2 ; 3/4 ; 5/6 must be shorted together Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged CR1 SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A January, 2008 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC60DAM24CT1G – Rev 0 Symbol VDSS APTC60DAM24CT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ Tj = 25°C Tj = 125°C VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 14.4 17 Max 350 600 24 3.9 200 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz nF 300 VGS = 10V VBus = 300V ID = 95A nC 68 102 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5Ω 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω 810 µJ 1040 1320 µJ 1270 CR1 SiC diode ratings and characteristics Maximum Reverse Leakage Current VR=600V Min 600 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ Max 200 400 40 1.6 2.0 800 4000 IF DC Forward Current VF Diode Forward Voltage IF = 40A QC Total Capacitive Charge IF = 40A, VR = 300V di/dt =1200A/µs 56 C Total Capacitance f = 1MHz, VR = 200V 260 f = 1MHz, VR = 400V 200 www.microsemi.com Unit V µA A 1.8 2.4 V nC January, 2008 IRM Test Conditions pF 2–7 APTC60DAM24CT1G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTC60DAM24CT1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor SiC Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.27 0.8 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ T T ⎝ 25 ⎠⎦ ⎣ See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC60DAM24CT1G – Rev 0 January, 2008 SP1 Package outline (dimensions in mm) APTC60DAM24CT1G Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 280 720 VGS=15&10V 6.5V 560 ID, Drain Current (A) 6V 480 400 5.5V 320 240 5V 160 4.5V 80 4V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 240 200 160 120 80 TJ=125°C 40 TJ=25°C 0 0 5 10 15 20 25 0 Normalized to VGS=10V @ 95A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 100 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) 0.9 80 60 40 20 0 0 40 80 120 160 200 240 280 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) January, 2008 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 150 4–7 APTC60DAM24CT1G – Rev 0 ID, Drain Current (A) 640 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) 0.9 0.8 0.7 limited by RDSon 100 100 µs 0.6 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 10000 1000 Crss 10 0 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 1000000 100 100 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 100000 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=95A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) January, 2008 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) VGS=10V ID= 95A 2.5 5–7 APTC60DAM24CT1G – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DAM24CT1G APTC60DAM24CT1G Delay Times vs Current 140 Rise and Fall times vs Current 70 VDS=400V RG=2.5Ω TJ=125°C L=100µH 60 100 td(off) tr and tf (ns) VDS=400V RG=2.5Ω TJ=125°C L=100µH 80 60 40 td(on) 20 50 40 30 tr 20 10 0 0 0 20 40 60 80 100 120 140 160 0 20 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Eoff Switching Energy (mJ) Eon 1.5 1 0.5 0 VDS=400V ID=95A TJ=125°C L=100µH 4 3 Eoff Eon 2 1 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 Operating Frequency vs Drain Current VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C ZCS 250 ZVS 200 150 100 IDR, Reverse Drain Current (A) 300 hard switching 50 0 10 20 30 40 50 60 70 80 5 10 15 20 25 Gate Resistance (Ohms) 90 ID, Drain Current (A) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 January, 2008 Switching Energy (mJ) 2 80 100 120 140 160 5 VDS=400V RG=2.5Ω TJ=125°C L=100µH 2.5 60 ID, Drain Current (A) Switching Energy vs Current 3 Frequency (kHz) tf VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTC60DAM24CT1G – Rev 0 td(on) and td(off) (ns) 120 APTC60DAM24CT1G Typical CR1 SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 800 TJ=25°C 60 TJ=75°C IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 80 TJ=175°C 40 TJ=125°C 20 0 0 0.5 1 1.5 2 2.5 3 3.5 700 TJ=175°C 600 500 TJ=125°C TJ=75°C 400 300 200 TJ=25°C 100 0 200 300 400 500 600 700 800 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage 1600 C, Capacitance (pF) 1400 1200 1000 800 600 400 200 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTC60DAM24CT1G – Rev 0 1 January, 2008 0