MICROSEMI APTCV60TLM991G

APTCV60TLM991G
Three level inverter
CoolMOS & Trench + Field Stop IGBT
Power Module
Trench & Field Stop IGBT Q2, Q3:
VCES = 600V ; IC = 30A @ Tc = 80°C
CoolMOS™ Q1, Q4:
VDSS = 600V ; ID = 17A @ Tc = 80°C
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Q2, Q3 Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
•
•
•
Very low stray inductance
High level of integration
March, 2009
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-8
APTCV60TLM991G – Rev 0
All multiple inputs and outputs must be shorted together
5/6 ; 9/10
Q1, Q4 CoolMOS™
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
APTCV60TLM991G
Q1 & Q4 Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
22
17
75
±20
99
110
11
1.2
800
Unit
V
A
V
mΩ
W
A
mJ
Q1 & Q4 Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Tj = 25°C
VGS = 0V
VDS = 600V
Tj = 125°C
VGS = 10V, ID = 18A
VGS = VDS, ID = 1.2 mA
VGS = ±20 V, VDS = 0V
Min
Typ
Max
50
Unit
99
3.5
100
mΩ
V
nA
Max
Unit
100
2.5
3
Min
Typ
2800
130
µA
Q1 & Q4 Dynamic Characteristics
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
RthJC
Fall Time
Test Conditions
VGS = 0V ; VDS = 100V
f = 1MHz
pF
14
VGS = 10V
VBus = 400V
ID = 18A
nC
20
60
10
5
60
VGS = 10V
VBus = 400V
ID = 18A
RG = 3.3Ω
ns
5
Junction to Case Thermal Resistance
1.15
°C/W
Q2 & Q3 Absolute maximum ratings
ICM
VGE
PD
RBSOA
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TJ = 150°C
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Max ratings
600
50
30
60
±20
90
60A @ 550V
Unit
V
March, 2009
IC
Parameter
Collector - Emitter Breakdown Voltage
A
V
W
2-8
APTCV60TLM991G – Rev 0
Symbol
VCES
APTCV60TLM991G
Q2 & Q3 Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 30A
Tj = 150°C
VGE = VCE , IC = 400µA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.5
1.7
5.8
Min
Typ
Max
Unit
250
1.9
µA
6.5
300
V
nA
Max
Unit
V
Q2 & Q3 Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Turn-on Delay Time
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
RthJC
VGE = 0V
VCE = 25V
f = 1MHz
VGE=±15V, IC=30A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10Ω
Tj = 25°C
VGE = ±15V
Tj = 150°C
VBus = 300V
IC = 30A
Tj = 25°C
RG = 10Ω
Tj = 150°C
VGE ≤15V ; VBus = 360V
tp ≤ 6µs ; Tj = 150°C
Junction to Case Thermal Resistance
1600
110
50
pF
0.3
µC
110
45
200
40
ns
120
50
ns
250
60
0.16
0.3
0.7
1.05
mJ
150
A
mJ
1.6
°C/W
March, 2009
Tr
Test Conditions
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3-8
APTCV60TLM991G – Rev 0
Symbol Characteristic
APTCV60TLM991G
CR2, CR3, CR5 & CR6 diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
Test Conditions
VR=600V
IF = 30A
IF = 60A
IF = 30A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
di/dt =200A/µs
Err
Reverse Recovery Energy
IF = 30A
VR = 400V
IF = 30A
VR = 400V
Min
600
Tj = 25°C
Tj = 125°C
Tc = 80°C
Typ
Max
25
500
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
30
1.8
2.2
1.5
25
160
35
Tj = 125°C
480
Tj = 125°C
0.6
Unit
V
µA
A
2.2
V
ns
nC
mJ
di/dt =1000A/µs
RthJC
Junction to Case Thermal Resistance
1.2
°C/W
Max
Unit
V
Thermal and package characteristics
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Min
2500
-40
-40
-40
2.5
Typ
175*
125
100
4.7
80
°C
N.m
g
* Tjmax = 150°C for Q1 & Q4
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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4-8
APTCV60TLM991G – Rev 0
March, 2009
SP1 Package outline (dimensions in mm)
APTCV60TLM991G
Q2 & Q3 Typical performance curve
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
80
VCE=300V
D=50%
R G=10Ω
T J=150°C
60
T c =85°C
40
20
Hard
switching
0
0
10
20
30
40
IC (A)
Output Characteristics (VGE=15V)
Output Characteristics
60
60
TJ=25°C
VGE=19V
TJ = 150°C
50
50
VGE=13V
40
TJ=150°C
IC (A)
IC (A)
TJ=125°C
40
30
VGE=15V
30
20
20
10
10
VGE=9V
TJ=25°C
0
0
0.5
1
1.5
VCE (V)
0
2
2.5
0
3
0.5
2
VCE = 300V
VGE = 15V
RG = 10Ω
TJ = 150°C
TJ=25°C
50
1.5
E (mJ)
40
IC (A)
1.5
2
VCE (V)
2.5
3
3.5
Energy losses vs Collector Current
Transfert Characteristics
60
1
30
20
Eoff
1
0.5
TJ=150°C
Eon
10
TJ=25°C
0
0
5
6
7
8
9
10
11
0
12
10
20
Switching Energy Losses vs Gate Resistance
2.5
VCE = 300V
VGE =15V
IC = 30A
TJ = 150°C
1.5
40
50
60
Reverse Bias Safe Operating Area
70
Eon
60
50
Eoff
IC (A)
E (mJ)
2
30
IC (A)
VGE (V)
1
40
30
20
0.5
VGE=15V
TJ=150°C
RG=10Ω
10
Eon
0
0
0
10
20
30
40
50
60
Gate Resistance (ohms)
70
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
March, 2009
1.6
0.9
1.4
1.2
1
0.8
0.7
0.5
0.6
0.3
0.4
0.1
Single Pulse
0.2
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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5-8
APTCV60TLM991G – Rev 0
Thermal Impedance (°C/W)
1.8
APTCV60TLM991G
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6-8
APTCV60TLM991G – Rev 0
March, 2009
Q1 & Q4 Typical performance curve
APTCV60TLM991G
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.2
Thermal Impedance (°C/W)
0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.2
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
ID, Drain Current (A)
VGS=10, 20V
6.5V
80
6V
40
4.5V
0
0
5
10
15
VDS, Drain to Source Voltage (V)
20
BVDSS, Drain to Source Breakdown
Voltage
Breakdown Voltage vs Temperature
120
675
650
625
600
25
50
75
100
125
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
DC Drain Current vs Case Temperature
25
100
100 µs
10
Single pulse
TJ=150°C
TC=25°C
1
10 ms
ID, DC Drain Current (A)
20
15
10
5
0.1
0
1
10
100
1000
25
VDS, Drain to Source Voltage (V)
Ciss
1000
Coss
100
10
Crss
1
0
10
150
Gate Charge vs Gate to Source Voltage
VDS=400V
ID=18A
TJ=25°C
8
6
March, 2009
C, Capacitance (pF)
10000
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
50
75
100
125
TC, Case Temperature (°C)
4
2
0
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
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0
10
20
30
40
Gate Charge (nC)
50
60
7-8
APTCV60TLM991G – Rev 0
ID, Drain Current (A)
limited by RDSon
APTCV60TLM991G
CR2, CR3, CR5 & CR6 Typical performance curve
Forward Characteristic of diode
80
IF (A)
60
TJ=125°C
40
TJ=25°C
20
0
0.0
0.4
0.8
1.2
VF (V)
1.6
2.0
2.4
Switching Energy Losses vs Gate Resistance
1
0.75
0.75
0.5
E (mJ)
E (mJ)
Energy losses vs Collector Current
1
VCE = 400V
VGE = 15V
RG = 2.5Ω
TJ = 125°C
0.25
20
40
60
VCE = 400V
VGE =15V
IC = 30A
TJ = 125°C
0.25
0
0
0.5
0
80
0
2
4
6
8
Gate Resistance (ohms)
IC (A)
10
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2
1
0.8
0.6
0.4
0.2
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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8-8
APTCV60TLM991G – Rev 0
March, 2009
Rectangular Pulse Duration (Seconds)