APTM20UM04SAG Single switch Series & parallel diodes MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control CR1 D S Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Q1 G D Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 417 310 1670 ±30 5 1560 100 50 3000 Unit V A V mΩ W A July, 2006 S mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20UM04SAG – Rev 1 SK VDSS = 200V RDSon = 4mΩ typ @ Tj = 25°C ID = 417A @ Tc = 25°C APTM20UM04SAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min Tj = 25°C VGS = 0V,VDS = 160V Tj = 125°C VGS = 10V, ID = 208.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 417A IF VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt = 1000A/µs mΩ V nA nF nC 116 3396 µJ 3716 3744 µJ 3944 Typ Tj = 25°C Tj = 125°C Max 1000 1250 Tj = 125°C 360 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 360 Tj = 125°C 1500 www.microsemi.com ns 88 Min 200 T c = 85°C IF = 360A VR = 133V Unit 64 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 417A, R G = 1.2Ω IF = 360A IF = 720A IF = 360A Max µA 32 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 417A, R G = 1.2Ω DC Forward Current Unit 268 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 417A R G = 1.2Ω VR=200V Typ 28.8 9.32 0.58 560 Max 500 2000 5 5 ±200 212 Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 4 3 Min Series diode ratings and characteristics IRM Typ VGS = 0V,VDS = 200V Unit V µA A 1.15 V July, 2006 IDSS Characteristic ns nC 2–6 APTM20UM04SAG – Rev 1 Symbol APTM20UM04SAG Parallel diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min 200 Tj = 25°C Tj = 125°C VR=200V IF = 360A IF = 720A IF = 360A IF = 360A VR = 133V di/dt = 1000A/µs Tj = 125°C 360 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 360 Tj = 125°C 1500 Symbol Characteristic Min Transistor Series Diode Parallel Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Wt Package Weight To heatsink For terminals M6 M5 Max 1000 1250 T c = 85°C Thermal and package characteristics Torque Typ 2500 -40 -40 -40 3 2 Typ Unit V µA A 1.15 V ns nC Max 0.08 0.12 0.12 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM20UM04SAG – Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTM20UM04SAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 Single Pulse 0.1 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 1200 VGS=15V 2500 ID, Drain Current (A) 10V 2000 9V 1500 8.5V 8V 1000 7.5V 7V 500 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 1000 800 600 400 TJ=25°C 200 TJ=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 208.5A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 450 RDS(on) vs Drain Current ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.9 0.8 400 350 300 250 200 150 100 50 0 0 100 200 300 400 500 600 ID, Drain Current (A) 25 50 75 100 125 150 July, 2006 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 TC, Case Temperature (°C) www.microsemi.com 4–6 APTM20UM04SAG – Rev 1 ID, Drain Current (A) 3000 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID= 208.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 1000 limited by RDSon 100µs 100 1ms 10ms Single pulse TJ=150°C TC=25°C 10 0.6 100ms 1 -50 -25 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 1000 Crss 100 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=417A V DS=40V 12 TJ =25°C VDS=100V 10 8 VDS=160V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 80 160 240 320 400 480 560 640 Gate Charge (nC) July, 2006 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 www.microsemi.com 5–6 APTM20UM04SAG – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20UM04SAG APTM20UM04SAG Delay Times vs Current Rise and Fall times vs Current 160 120 VDS=133V RG=1.2Ω T J=125°C L=100µH 60 40 t r and tf (ns) t d(on) and td(off) (ns) td(off) 80 t d(on) 120 100 80 tr 60 20 0 0 0 100 200 300 400 500 600 700 I D, Drain Current (A) 0 VDS=133V RG=1.2Ω TJ=125°C L=100µH Switching Energy (mJ) Eoff Eon 4 2 Eoff 0 V DS=133V ID=417A T J=125°C L=100µH 12 10 Eoff 8 6 Eon 4 100 200 300 400 500 600 700 0 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 250 ZCS V DS=133V D=50% RG=1.2Ω T J=125°C T C=75°C ZVS Hard switching 0 50 5 7.5 10 12.5 15 Source to Drain Diode Forward Voltage 300 200 2.5 Gate Resistance (Ohms) 350 50 600 2 0 100 200 300 400 500 ID, Drain Current (A) 14 6 150 100 Switching Energy vs Gate Resistance Switching Energy vs Current 8 Eon and Eoff (mJ) tf 40 20 Frequency (kHz) V DS=133V R G=1.2Ω T J=125°C L=100µH 140 100 1000 100 TJ=150°C TJ =25°C 10 1 100 150 200 250 300 350 400 I D, Drain Current (A) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20UM04SAG – Rev 1 July, 2006 VSD, Source to Drain Voltage (V)