MICROSEMI APTM100UM65DAG

APTM100UM65DAG
Single switch
with Series diode
MOSFET Power Module
SK
VDSS = 1000V
RDSon = 65mΩ typ @ Tj = 25°C
ID = 145A @ Tc = 25°C
Application
S
D
G
DK
S
Zero Current Switching resonant mode
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
D
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
G
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
145
110
580
±30
78
3250
30
50
3200
Unit
V
A
V
mΩ
W
A
July, 2006
SK
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTM100UM65DAG – Rev 1
DK
•
APTM100UM65DAG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
VGS = 0V,VDS= 1000V
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 72.5A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Symbol Characteristic
IRM
IF
VF
Typ
28.5
5.08
0.9
1068
Max
400
2
78
5
±400
Unit
µA
mA
mΩ
V
nA
Max
Unit
nF
136
nC
692
VGS = 15V
VBus = 500V
ID = 145A
R G = 0.75Ω
18
14
140
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 145A, R G = 0.75Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 145A, R G = 0.75Ω
4.8
ns
55
Test Conditions
mJ
2.9
8
mJ
3.9
Min
Typ
Max
1000
VR=1000V
DC Forward Current
Diode Forward Voltage
65
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
3
VGS = 10V
VBus = 500V
ID = 145A
Series diode ratings and characteristics
VRRM
Min
Tj = 25°C
trr
Reverse Recovery Time
IF = 240A
VR = 667V
Qrr
Reverse Recovery Charge
di/dt = 800A/µs
www.microsemi.com
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
IF = 240A
IF = 480A
IF = 240A
Unit
750
1000
Tj = 125°C
240
2
2.2
1.7
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
280
350
3.04
14.4
µA
A
2.5
V
ns
July, 2006
IDSS
Test Conditions
µC
2–6
APTM100UM65DAG – Rev 1
Symbol Characteristic
APTM100UM65DAG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To Heatsink
Mounting torque
For teminals
Package Weight
Min
Transistor
Series diode
Typ
Max
0.038
0.23
2500
M6
M5
-40
-40
-40
3
2
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTM100UM65DAG – Rev 1
July, 2006
SP6 Package outline (dimensions in mm)
APTM100UM65DAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.04
0.035
0.9
0.03
0.7
0.025
0.02
0.5
0.015
0.3
0.01
Single Pulse
0.1
0.05
0.005
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
480
360
VGS =15, 10V
7V
280
ID, Drain Current (A)
6.5V
240
200
6V
160
120
80
5.5V
40
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
400
320
240
TJ=25°C
160
80
TJ=125°C
5V
0
0
5
10
15
20
25
30
0
ID, DC Drain Current (A)
Normalized to
VGS =10V @ 72.5A
1.3
1.2
1.1
VGS=10V
1
2
3
4
5
6
7
8
DC Drain Current vs Case Temperature
160
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
V GS=20V
0.9
0.8
120
80
40
0
0
80
160
240
320
ID, Drain Current (A)
25
50
75
100
125
150
July, 2006
RDS(on) Drain to Source ON Resistance
T J=-55°C
0
TC, Case Temperature (°C)
www.microsemi.com
4–6
APTM100UM65DAG – Rev 1
I D, Drain Current (A)
320
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=72.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
limited by R DSon
100
1ms
10
10ms
Single pulse
TJ=150°C
TC=25°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
Crss
1000
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=145A
TJ =25°C
12
10
VDS=200V
VDS=500V
V DS =800V
8
6
4
2
0
0
300
600
900
1200
1500
Gate Charge (nC)
July, 2006
0
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
www.microsemi.com
5–6
APTM100UM65DAG – Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100UM65DAG
APTM100UM65DAG
Delay Times vs Current
Rise and Fall times vs Current
100
160
V DS =670V
RG =0.75Ω
T J=125°C
L=100µH
80
120
tr and tf (ns)
td(on) and td(off) (ns)
t d(off)
V DS=670V
RG=0.75Ω
T J=125°C
L=100µH
80
40
t d(on)
60
40
tr
20
0
0
50
94
138
182
226
270
50
94
ID, Drain Current (A)
10
Eon
Switching Energy (mJ)
Switching Energy (mJ)
VDS=670V
RG=0.75Ω
TJ=125°C
L=100µH
12
Eoff
8
6
4
2
0
18
Eoff
14
Eon
10
6
94
138
182
226
270
E off
0
ID, Drain Current (A)
1
2
3
4
5
6
7
8
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
300
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
1000
250
Frequency (kHz)
V DS=670V
ID=145A
T J=125°C
L=100µH
22
2
50
ZCS
200
50
270
26
14
100
138
182
226
I D, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
16
150
tf
VDS=670V
D=50%
RG=0.75Ω
T J=125°C
T C=75°C
Hard
switching
0
35
55
75
95
115
ID, Drain Current (A)
135
T J=150°C
T J=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6–6
APTM100UM65DAG – Rev 1
July, 2006
15
100