PD - 97470
AUIRF3710Z
AUIRF3710ZS
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
O
O
O
O
O
O
O
Low On-Resistance
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
VDSS = 100V
RDS(on) = 18mΩ
G
ID = 59A
Description
S
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB
AUIRF3710Z
D2Pak
AUIRF3710ZS
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
Parameter
59
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
42
c
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
160
W
VGS
Linear Derating Factor
Gate-to-Source Voltage
1.1
± 20
W/°C
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
170
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
200
IAR
Avalanche Current
EAR
TJ
Repetitive Avalanche Energy
Operating Junction and
TSTG
Storage Temperature Range
240
c
h
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
k
See Fig.12a,12b,15,16
A
-55 to + 175
mJ
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
Max.
Units
–––
0.92
°C/W
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient (PCB Mount, steady state)
–––
40
RθJC
Junction-to-Case
RθCS
RθJA
j
Parameter
d
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
3/19/10
AUIRF3710Z/S
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
V(BR)DSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100
–––
–––
2.0
35
–––
–––
–––
–––
–––
0.10
14
–––
–––
–––
–––
–––
–––
–––
–––
18
4.0
–––
20
250
200
-200
V
V/°C
mΩ
V
S
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 35A
VDS = VGS, ID = 250μA
VDS = 50V, ID = 35A
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
–––
–––
–––
–––
–––
82
19
27
17
77
41
56
4.5
7.5
120
28
40
–––
–––
–––
–––
–––
nC
ns
nH
ID = 35A
VDS = 80V
VGS = 10V
VDD = 50V
ID = 35A
RG = 6.8Ω
VGS = 10V
Between lead,
f
f
D
–––
6mm (0.25in.)
from package
–––
–––
–––
–––
–––
–––
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
G
S
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2900
290
150
1130
170
280
pF
Diode Characteristics
Parameter
IS
ISM
VSD
trr
Qrr
ton
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.27mH,
RG = 25Ω, IAS = 35A, VGS =10V. Part not
recommended for use above this value.
ISD ≤ 35A, di/dt ≤ 380A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
2
Min. Typ. Max. Units
–––
–––
59
–––
–––
240
–––
–––
–––
–––
50
100
1.3
75
160
Conditions
MOSFET symbol
A
V
ns
nC
D
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 35A, VGS = 0V
TJ = 25°C, IF = 35A, VDD = 25V
di/dt = 100A/μs
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
This value determined from sample failure population,
starting TJ = 25°C, L = 0.27mH,RG = 25Ω, IAS = 35A, VGS =10V
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220AB pakcage.
www.irf.com
AUIRF3710Z/S
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Comments:
This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
TO-220AB
2
D PAK
Machine Model
††
N/A
MSL1
Class M4
AEC-Q101-002
ESD
Human Body Model
Class H1C
AEC-Q101-001
Charged Device Model
Class C3
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF3710Z/S
1000
1000
100
10
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
1
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
0.1
100
BOTTOM
4.5V
10
20μs PULSE WIDTH
Tj = 175°C
20μs PULSE WIDTH
Tj = 25°C
1
0.01
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
1000
120
GFS, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
10
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
T J = 175°C
100
10
T J = 25°C
1
VDS = 25V
20μs PULSE WIDTH
0
2
4
6
8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
10
100
TJ = 25°C
80
T J = 175°C
60
40
20
VDS = 15V
20μs PULSE WIDTH
0
0
10
20
30
40
50
60
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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70
AUIRF3710Z/S
VGS = 0V,
C
iss
C rss
12.0
ID= 35A
SHORTED
C oss = Cds + C gd
10000
C, Capacitance(pF)
f = 1 MHZ
=C + C , C
gs
gd
ds
= Cgd
V GS, Gate-to-Source Voltage (V)
100000
Ciss
1000
Coss
Crss
100
10
1
10
100
V DS= 50V
V DS= 20V
8.0
6.0
4.0
2.0
0.0
0
V DS, Drain-to-Source Voltage (V)
20
ID, Drain-to-Source Current (A)
1000
10.00
TJ = 25°C
1.00
V GS = 0V
0.10
0.4
0.6
0.8
1.0
1.2
1.4
V SD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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80
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
TJ = 175°C
0.2
60
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
40
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
ISD, Reverse Drain Current (A)
V DS= 80V
10.0
1.6
100μsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
0.1
1
10
100
1000
V DS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF3710Z/S
60
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
ID, Drain Current (A)
50
40
30
20
10
0
2.5
ID = 59A
V GS = 10V
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
-60 -40 -20 0
TC , Case Temperature (°C)
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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1
AUIRF3710Z/S
300
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
15V
ID
15A
25A
BOTTOM 35A
TOP
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2μF
.3μF
D.U.T.
+
V
- DS
V GS(th) Gate threshold Voltage (V)
5.0
4.0
3.0
ID = 250μA
2.0
1.0
-75 -50 -25
VGS
0
25
50
75 100 125 150 175 200
TJ , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage vs. Temperature
7
AUIRF3710Z/S
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses
0.01
10
0.05
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
200
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 35A
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF3710Z/S
D.U.T
Driver Gate Drive
+
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
D=
Period
P.W.
+
VDD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
VDS
V GS
RG
RD
D.U.T.
+
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF3710Z/S
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF3710Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRF3710Z/S
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRF3710ZS
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF3710Z/S
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
12
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
www.irf.com
AUIRF3710Z/S
Ordering Information
Base part number Package Type
AUIRF3710Z
AUIRF3710ZS
AUIRF3710ZS
AUIRF3710ZS
www.irf.com
TO-220
D2Pak
Standard Pack
Complete Part Number
Form
Quantity
Tube
50
AUIRF3710ZS
Tube
50
AUIRF3710ZS
Tape and Reel Left
800
AUIRF3710ZSTRL
Tape and Reel Right
800
AUIRF3710ZSTRR
13
AUIRF3710Z/S
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to
its products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
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of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is
an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application in which
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
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claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any
claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that IR was negligent regarding the design or manufacture of the product.
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the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products
designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such
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IR products are neither designed nor intended for use in automotive applications or environments unless the
specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number
including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products
in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
14
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