PD-96391A
AUTOMOTIVE GRADE
AUIRFZ44NS
AUIRFZ44NL
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
l
D
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
55V
RDS(on) max.
G
17.5mΩ
ID
S
49A
D
D
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
S
G
G
D2 Pak
D
S
TO-262
AUIRFZ44NL
AUIRFZ44NS
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS (Thermally Limited)
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Max.
c
h
c
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
49
35
160
3.8
94
0.63
±20
150
530
25
9.4
5.0
-55 to + 175
g
c
e
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
1.5
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
08/29/11
AUIRFZ44NS/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
Parameter
55
–––
–––
V
Conditions
VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.058
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
17.5
2.0
–––
4.0
mΩ
V
gfs
IDSS
Forward Transconductance
19
–––
–––
S
VDS = 25V, ID = 25A
Drain-to-Source Leakage Current
–––
–––
25
μA
VDS =55V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = 10V, ID = 25A
f
VDS = VGS, ID = 250μA
f
VDS = 44V, VGS = 0V, TJ = 150°C
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
–––
63
Qgs
Gate-to-Source Charge
–––
–––
14
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
23
td(on)
Turn-On Delay Time
–––
12
–––
VDD = 28V
tr
Rise Time
–––
60
–––
ID = 25A
td(off)
Turn-Off Delay Time
–––
44
–––
tf
Fall Time
–––
45
–––
LD
Internal Drain Inductance
–––
4.5
–––
–––
7.5
–––
LS
Internal Source Inductance
Ciss
Input Capacitance
–––
1470
–––
Coss
Output Capacitance
–––
360
–––
Crss
Reverse Transfer Capacitance
–––
88
–––
Min.
Typ.
Max.
ID = 25A
nC
VDS = 44V
VGS = 10V,See Fig 6 and 13
ns
RG = 12Ω
VGS = 10V, See Fig.10
Between lead,
nH
f
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
pF
S
VDS = 25V
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
c
–––
–––
Units
Conditions
MOSFET symbol
49
A
showing the
integral reverse
D
G
–––
160
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V
trr
Reverse Recovery Time
–––
63
95
Qrr
Reverse Recovery Charge
–––
170
260
ns
nC
TJ = 25°C, IF = 25A
di/dt = 100A/μs
ton
Forward Turn-On Time
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.48mH, RG = 25Ω, IAS = 25A. (See Figure 12)
ISD ≤ 25A, di/dt ≤ 230A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
2
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AUIRFZ44NS/L
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
3L-D2 PAK
MSL1
3L-TO-262
N/A
†††
Machine Model
Class M3(+/- 400V )
(per AEC-Q101-002)
†††
ESD
Human Body Model
Class H1B(+/- 1000V )
(per AEC-Q101-001)
†††
Charged Device Model
RoHS Compliant
Class C5(+/- 2000V )
(per AEC-Q101-005)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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3
AUIRFZ44NS/L
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
100
4.5V
10
100
4.5V
10
20μs PULSE WIDTH
25°C
TTJC==25°C
1
0.1
1
A
10
1
0.1
100
VDS , Drain-to-Source Voltage (V)
TJ = 25°C
TJ = 175°C
10
V DS = 25V
20μs PULSE WIDTH
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
4
10
A
100
Fig 2. Typical Output Characteristics
1000
1
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
20μs PULSE WIDTH
TC
= 175°C
175°C
J=
10
A
I D = 41A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRFZ44NS/L
2500
Ciss
V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
2000
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V DS = 44V
V DS = 28V
16
1500
12
Coss
1000
Crss
500
I D = 25A
0
1
10
100
A
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
VDS , Drain-to-Source Voltage (V)
20
30
40
50
60
A
70
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
100
TJ = 175°C
TJ = 25°C
10
VGS = 0V
1
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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A
3.0
100
10μs
100μs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10ms
10
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFZ44NS/L
50
RD
V DS
V GS
40
D.U.T.
ID , Drain Current (A)
RG
+
-V DD
30
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
10
0
Fig 10a. Switching Time Test Circuit
25
50
75
100
125
150
TC , Case Temperature ( ° C)
175
VDS
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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15V
L
VDS
DRIVER
D.U.T
RG
+
- VDD
IAS
20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
AUIRFZ44NS/L
500
TOP
BOTTOM
400
ID
10A
18A
25A
300
200
100
0
VDD = 25V
25
50
75
100
125
150
A
175
Starting TJ , Junction Temperature (°C)
V(BR)DSS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
Current Regulator
Same Type as D.U.T.
I AS
50KΩ
Fig 12b. Unclamped Inductive Waveforms
.2μF
12V
.3μF
D.U.T.
+
V
- DS
VGS
3mA
QG
VGS
IG
ID
Current Sampling Resistors
QGS
QGD
Fig 13b. Gate Charge Test Circuit
VG
Charge
Fig 13a. Basic Gate Charge Waveform
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7
AUIRFZ44NS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
V DD
VGS
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V[GS=10V]
***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
8
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AUIRFZ44NS/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUFZ44NS
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFZ44NS/L
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUFZ44NL
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFZ44NS/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
11
AUIRFZ44NS/L
Ordering Information
Base part
AUIRFZ44NL
AUIRFZ44NS
12
Package Type
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRFZ44NL
AUIRFZ44NS
AUIRFZ44NSTRL
AUIRFZ44NSTRR
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AUIRFZ44NS/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the
time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
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into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
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designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
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WORLD HEADQUARTERS:
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Tel: (310) 252-7105
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