BAR 28 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request. DO 35 (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Value Repetitive Peak Reverse Voltage 70 V Ta = 25 °C 15 mA tp ≤ 1s 50 mA - 65 to 200 - 65 to 200 °C 230 °C Value Unit 400 °C/W Forward Continuous Current* IFSM Surge non Repetitive Forward Current* Tstg Tj Storage and Junction Temperature Range TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case IF Unit THERMAL RESISTANCE Symbol Rth(j-a) Test Conditions Junction-ambient* ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. 70 Unit V VBR Tamb = 25°C IR = 10µA VF * * Tamb = 25°C IF = 1mA 0.41 Tamb = 25°C IF = 15mA 1 Tamb = 25°C VR = 50V 0.2 µA Max. Unit 2 pF 100 ps IR * * V DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. C Tamb = 25°C VR = 0V f = 1MHz τ Tamb = 25°C IF = 5mA Krakauer Method Typ. * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. November 1994 1/3 BAR 28 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Capacitance C versus reverse applied voltage VR (typical values). Figure 3. Reverse current versus ambient temperature. Figure 4. Reverse current versus continuous reverse voltage (typical values). 2/3 BAR 28 PACKAGE MECHANICAL DATA DO 35 Glass B A note 1 E B /C O E note 1 /D O O /D note 2 DIMENSIONS REF. Millimeters Inches NOTES Min. Max. Min. Max. A 3.050 4.500 0.120 0.117 1 - The lead diameter ∅ D is not controlled over zone E B 12.7 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) 0.500 ∅C 1.530 2.000 0.060 0.079 ∅D 0.458 0.558 0.018 0.022 E 1.27 0.050 Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A. 3/3