ETC BC817

BC817, BC818
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
Mounting Pad Layout
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
0.031 (0.8)
.016 (0.4)
Top View
0.035 (0.9)
.056 (1.43)
.052 (1.33)
3
.016 (0.4)
Pin Configuration
1 = Base
2 = Emitter
3 = Collector
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
max. .004 (0.1)
2
.102 (2.6)
.094 (2.4)
.016 (0.4)
0.037 (0.95)
0.037 (0.95)
.045 (1.15)
.037 (0.95)
1
0.079 (2.0)
Dimensions in inches and (millimeters)
Type
Marking
BC817-16
-25
-40
6A
6B
6C
BC818-16
-25
-40
6E
6F
6G
Mechanical Data
Features
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
• NPN Silicon Epitaxial Planar Transistors for
switching, AF driver and amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
-16, -25, and -40 according to their current gain.
• As complementary types, the PNP transistors
BC807 and BC808 are recommended.
Maximum Ratings and Thermal Characteristics
Parameter
(TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Emitter Voltage
(base shorted)
BC817
BC818
VCES
50
30
V
Collector-Emitter Voltage
(base open)
BC817
BC818
VCEO
45
25
V
VEBO
5
V
IC
800
mA
Peak Collector Current
ICM
1000
mA
Peak Base Current
IBM
200
mA
–IEM
1000
mA
Emitter-Base Voltage
Collector Current
Peak Emitter Current
Power Dissipation at TSB = 50 ˚C
Ptot
310
(1)
mW
(1)
°C/W
Thermal Resistance Junction to Ambiant Air
RθJA
450
Thermal Resistance Junction to Substrate Backside
RθSB
320 (1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Device on fiberglass substrate, see layout on third page.
Document Number 88163
09-May-02
www.vishay.com
1
BC817, BC818
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T
Parameter
J
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
hFE
VCE = 1V, IC = 100mA
100
160
250
—
—
—
250
400
600
—
—
—
hFE
VCE = 1V, IC = 500mA
40
—
—
—
Collector Saturation Voltage
VCEsat
IC = 500mA, IB = 50mA
—
—
0.7
V
Base Saturation Voltage
VBEsat
IC = 500mA, IB = 50mA
—
—
1.3
V
—
—
1.2
V
DC Current Gain
Current Gain Group-16
-25
-40
Base-Emitter VoltageVBEon
VCE = 1V, IC = 500mA
Collector-Base Cutoff Current
ICBO
VCB = 20V
VCB = 20V, TJ = 150°C
—
—
—
—
100
5
nA
µA
Emitter-Base Cutoff Current
IEBO
VEB = 4V
—
—
100
nA
fT
VCE = 5V, IC = 10mA
f = 50MHz
—
100
—
MHz
CCBO
VCB = 10V, f = 1MHz
—
12
—
pF
Gain-Bandwidth Product
Collector-Base Capacitance
Note:
(1) Device on fiberglass substrate, see layout below.
0.30 (7.5)
Layout for RθJA test
0.12 (3)
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
0.59 (15)
0.03 (0.8)
0.47 (12)
Dimensions in inches (millimeters)
0.2 (5)
0.06 (1.5)
0.20 (5.1)
www.vishay.com
2
Document Number 88163
09-May-02
BC817, BC818
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88163
09-May-02
www.vishay.com
3
BC817, BC818
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com
4
Document Number 88163
09-May-02
BC817, BC818
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88163
09-May-02
www.vishay.com
5