BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor NPN Silicon P b Lead(Pb)-Free COLLECTOR 3 3 1 1 BASE 2 2 EMITTER SOT-323(SC-70) Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value Unit BC846 BC847 BC848 V CEO 65 45 30 V BC846 BC847 BC848 VCBO 80 50 30 V BC846 BC847 BC848 VEBO 6.0 6.0 5.0 V IC 100 mA Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (Note.1) TA=25°C Derate above 25°C Thermal Resistance, Junctionto Ambient (Note.1) Junctionand Temperature Range Storage Temperature Range Max Unit PD 150 2.4 mW mW/°C RθJA 833 °C/W TJ +150 °C Tstg -55 to +150 °C Symbol Device Marking BC846AW=1A; BC846BW=1B; BC847AW=1E; BC847BW=1F BC847CW=1G; BC848AW=1J; BC848BW;=1K; BC848CW=1L 1. FR-5=1.0 x 0.75 x 0.062 in. WE ITR O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/4 Rev.B 12-Dec-06 BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW WEITRON Electrical Characteristics (TA=25°C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage (IC=10mA) BC846A Series BC847A Series BC848A Series V(BR)CEO 65 45 30 - - V Collector-Emitter Breakdown Voltage (IC=10μA,VEB=0) BC846A Series BC847A Series BC848A Series V(BR)CES 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10μA) BC846A Series BC847A Series BC848A Series V(BR)CBO 80 50 30 - - V Emitter-Base Breakdown Voltage (IE=1.0μA) BC846A Series BC847A Series BC848A Series V(BR)EBO 6.0 6.0 5.0 - - V ICBO - - 15 5.0 nA mA hFE 110 200 420 90 150 270 180 290 520 220 450 800 - Collector-Emitter Saturation Voltage (IC=10mA, IB=0.5mA) (IC=100mA, IB=5.0mA) VCE(sat) - - 0.25 0.6 V Base-Emitter Saturation Voltage (IC=10mA,IB=0.5mA) (IC=100mA,IB=5.0mA) VBE(sat) - -0.7 -0.9 - V Base-Emitter On Voltage (IC=2.0mA,VCE=5.0V) (IC=10mA,VCE=5.0V) VBE(on) 580 - 660 - 700 770 V fT 100 - - MHz - - 4.5 pF - - 10 4.0 dB Collector Cutoff Current (VCB=30V) (VCB=30V, TA=150°C) On Characteristics DC Current Gain (IC=10uA, VCE=5.0V) (IC=2.0mA, VCE=5.0V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C, Small-signal Characteristics Current-Gain-Bandwidth Product (IC=10mA, VCE=5.0V, f=100MHz) Output Capacitance (VCB=10V, f=1.0MHz) Cobo Noise Figure (IC=0.2mA, VCE=5.0V, Rs=2.0kΩ, f=1.0kHz, BW=200Hz) BC846A,B BC847A,B BC848A,B BC847C, BC848C W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw NF 2/4 Rev.B 12-Dec-06 BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW WEITRON 1.0 2.0 TA=2 5 C 0.9 VCE=1 0 V TA=2 5 C 1.5 V, VOLTAGE (VOLTS) hFE,NORMALIZED DC CURRENT GAIN BC847 & BC848 Series 1.0 0.8 0.6 0.4 0.8 VBE(s at)@IC/ B C=1 0 0.7 VBE(ON)@VCE= 1 0 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(s at)@IC/ B C=1 0 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 0.1 200 2.0 1.6 IC= 2 0 0 mA 1.2 IC= 1 0 mA 0.4 0 IC= 1 0 0 mA IC=-5 0 mA IC= 2 0 mA 0.02 0.1 1.0 10 20 Cib 3.0 1.0 0.4 Cob 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) C,CAPACITANCE (pF) TA=2 5 C 2.0 VR, REVERSE VOLTAGE (VOLTS) h t t p : / / w w w . w e i t r o n . c o m . tw 20 30 50 70 100 -5 5 C to +1 2 5 C 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 IC, COLLECTOR CURRENT (mA) 100 400 300 200 VCE=1 0 V TA= 2 5 C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances W E IT R O N 5.0 7.0 10 Figure 4. Base-Emitter Temperature Coefficient 10 5.0 2.0 3.0 1.0 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 7.0 0.5 0.7 1.0 Firure2. "Saturation" And "On" Voltage TA=2 5 C 0.8 0.2 0.3 IC, COLLECTOR CURRENT (mAdc) qVB, TEMPERATURE COEFFICIENT (mV/ C) VCE, COLLECTOR- EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mAdc) Figure1.Normalized DC Current Gain Figure 6. Current-Gain- Bandwidth Product 3/4 Rev.B 12-Dec-06 BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW WEITRON 1.0 TA=2 5 C VCE=5 V TA=2 5 C 0.8 VBE(s at) @IC/ IB =1 0 2.0 V,Voltage (Volts) hFE, DC CURRENT GAIN (NORAMALIZED) BC846 Series 1.0 0.5 0.6 VBE@VCE=-5 .0 V 0.4 0.2 0.2 VCE(s at) @IC/ IB =1 0 0.1 0.2 1.0 10 0 100 IC, COLLECTOR CURRENT (mA) 0.2 0.5 2.0 TA=2 5 C 1.6 2 0 mA 5 0 mA 1 0 0 mA 2 0 0 mA 1.2 0.8 0.4 IC= 1 0 mA 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 1.4 1.8 q VB for VBE -5 5 C to 1 2 5 C 2.2 2.6 3.3 20 0.2 0.5 1.0 fT, CURRENT-GAIN-BANDWIDTH PRODUCT C. CAPACTIANCE (pF) TA=2 5 C Cib 10 8.0 6.0 Cob 0.2 0.5 1.0 2.0 5.0 10 20 50 10 20 50 100 200 VCE=5 .0 V TA=2 5 C 200 100 50 20 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 12.Current-Gain-Bandwidth Product Figure 11. Capacitance h t t p : / / w w w . w e i t r o n . c o m . tw 500 1.0 100 VR, REVERSE VOLTAGE (VOLTS) W E IT R O N 5.0 Figure 10. Base-Emitter Temperature Coefficient 40 2.0 0.1 -2.0 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) 4.0 200 1.0 Figure 9. Collector Saturation Region 20 100 Figure 8. "ON" Voltage qVB TEMPERATURE COEFFICIENT (mV/ C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7.DC Current Gain 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT(mA) 4/4 Rev.B 12-Dec-06