BC856 thru BC859 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (PNP) Mounting Pad Layout 0.031 (0.8) TO-236AB (SOT-23) 0.035 (0.9) .122 (3.1) .110 (2.8) .016 (0.4) .056 (1.43) .052 (1.33) 3 .016 (0.4) Dimensions in inches and (millimeters) .016 (0.4) .102 (2.6) .094 (2.4) Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box Type Marking Marking BC856A B 3A 3B BC858A B C 3J 3K 3L BC857A B C 3E 3F 3G BC859A B C 4A 4B 4C Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (A, B, and C) according to their current gain. The type BC856 is available in groups A and B, however, the types BC857, BC558 and BC859 can be supplied in all three groups. The BC849 is a low noise type. • As complementary types, the NPN transistors BC846...BC849 are recomended. Maximum Ratings and Thermal Characteristics Parameter 0.037 (0.95) 0.037 (0.95) Type .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 Pin Configuration 1 = Base, 2 = Emitter, 3 = Collector .045 (1.15) .037 (0.95) 1 0.079 (2.0) Top View (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Base Voltage BC856 BC857 BC858, BC859 –VCBO 80 50 30 V Collector-Emitter Voltage (Base shorted) BC856 BC857 BC858, BC859 –VCES 80 50 30 V Collector-Emitter Voltage (Base open) BC856 BC857 BC858, BC859 –VCEO 65 45 30 V –VEBO 5 V –IC 100 mA Peak Collector Current –ICM 200 mA Peak Base Current –IBM 200 mA Emitter-Base Voltage Collector Current Peak Emitter Current IEM 200 mA Power Dissipation at TSB = 50°C Ptot 310 (1) mW Thermal Resistance Junction to Ambient Air RθJA 450 (1) °C/W RθSB (1) °C/W Thermal Resistance Junction to Substrate Backside 320 Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Device on fiberglass substrate, see layout on third page. Document Number 88169 09-May-02 www.vishay.com 1 BC856 thru BC859 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Current Gain Group A B C hfe –VCE = 5V, –IC = 2mA f = 1kHz — — — 220 330 600 — — — — — — Current Gain Group A B C hie –VCE = 5V, –IC = 2mA f = 1kHz 1.6 3.2 6.0 2.7 4.5 8.7 4.5 8.5 15.0 kΩ Current Gain Group A B C hoe –VCE = 5V, –IC = 2mA f = 1kHz — — — 18 30 60 30 60 110 µS hre –VCE = 5V, –IC = 2mA f = 1kHz — — — 1.5 ⋅ 10–4 2 ⋅ 10–4 3 ⋅ 10–4 — — — — — — J Current Gain Input Impedance Output Admittance Reverse Voltage Transfer Ratio Current Gain Group A B C DC Current Gain Current Gain Group A B C hFE –VCE = 5V, –IC = 10µA — — — 90 150 270 — — — — — — Current Gain Group A B C hFE –VCE = 5 V, –IC = 2mA 110 200 420 180 290 520 220 450 800 — — — Collector Saturation Voltage –VCEsat –IC = 10 mA, –IB = 0.5mA –IC = 100 mA, –IB = 5mA — — 90 250 300 650 mV Base Saturation Voltage –VBEsat –IC = 10 mA, –IB = 0.5mA –IC = 100 mA, –IB = 5mA — — 700 900 — — mV 660 — 750 — mV 820 Base-Emitter Voltage–VBEon –VCE = 5 V, –IC = 2mA 600 –VCE = 5 V, –IC = 10mA Collector-Base Cutoff Current Gain-Bandwidth Product Collector-Base Capacitance Noise Figure –ICBO –VCB = 30V –VCB = 30V, TJ = 150˚C — — — — 15 5 nA µA fT –VCE = 5V, –IC = 10mA f = 100MHz — 150 — MHz CCBO –VCB = 10V, f = 1MHz — — 6 pF –VCE = 5V, –IC = 200µA RG =2kΩ,f=1kHz, ∆f= 200Hz — — 2 1 10 4 –VCE = 5V, –IC = 200µA RG = 2kΩ, f = 30...15000Hz — 1.2 4 BC856, BC857, BC858 BC859 F BC859 dB Note: (1) Device on fiberglass substrate, see layout on next page www.vishay.com 2 Document Number 88169 09-May-02 BC856 thru BC859 Vishay Semiconductors formerly General Semiconductor 0.30 (7.5) 0.12 (3) Layout for RθJA test Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) Dimensions in inches (millimeters) 0.03 (0.8) 0.47 (12) 0.2 (5) Admissible power dissipation versus temperature of substrate backside Device on fiblerglass substrate, see layout DC current gain versus collector current Document Number 88169 09-May-02 0.06 (1.5) 0.20 (5.1) Pulse thermal resistance versus pulse duration (normalized) Device on fiblerglass substrate, see layout Collector–Base cutoff current versus ambient temperature www.vishay.com 3 BC856 thru BC859 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 4 Document Number 88169 09-May-02 BC856 thru BC859 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88169 09-May-02 www.vishay.com 5